Growth of (100) oriented tri-layers of Y1-xPrxBa2Cu3O7 for the development of vertical Josephson junctions

Project Description

This project targets the development of an approach for growing (100)-oriented tri-layers of Y1-xPrxBa2Cu3O7 with the goal of producing vertical Josephson junctions (along the thickness). The physical properties of the tri-layers and the fabrication and study of junctions will be studied to evaluate their quality and compare them to similar devices already produced by the company Ambature Inc. The final objective of the partnership is to prepare tri-layers on single crystalline wafers 7.5cm in diameter for the fabrication of detection devices using a process patented by Ambature. The project includes the growth of thin films by laser ablation including optimization on 7.5 cm diameter wafers, their structural, magnetic and electrical characterization. Extensive studies of transport measurements (critical current) will be carried out at low temperature and low magnetic field on samples with junctions defined by photolithography. This study will allow us to develop the best possible approach for the reproducible and reliable fabrication of these devices for possible commercial purposes. Project can begin in the Fall 2024 or Winter 2025 semester.

Funding offered

To be discussed

Partner(s)

Ambature inc.

The last update was on 16 February 2024. The University reserves the right to modify its projects without notice.