Plasma Etcher STS Multiplex Inductively Coupled Plasma III-V

Description

Etching of III-V compounds and heterostructures and of metals by high-density plasma

Manufacturer and model

STS - Multiplex Inductively Coupled Plasma (ICP) SR III-V system

Technical specifications

• Temperature of the electrode (plate): -20 to 70 ° C
• ICP source: up to 1 kW at 13.56 MHz
• Plate source: 0-300 W at 13.56 MHz
• Gas installed on the system: Ar, N₂, Cl₂, He, H₂, CH₄, O₂, SiCl₄, BCl₃, SF₆
• Sample size: substrates up to 200 mm in diameter; Possibility to work with small samples
• Optical tracking system in real time (end point detection).
• Optical spectrometer (detection of species)

Examples of available processes

• “Ridge structure etching for heterostructured lasers.
• Chromium etching for the manufacture of photomasks.
• Etching of materials III-V, Ge, Si, GaN, diamond, metals