CBE for III-V materials

Description

Dedicated to the growth of III-V materials (Arsenides and Phosphides)  

Manufacturer and model

VG semicon - V90       

Technical specifications

• Wafer size up to 4
• Equipped with ABES, RHEED, Pyrometry and RGA
• Precursors :
  • • P, PH3 – Phosphine
    • As, AsH3 – Arsine
    • Ga, TEGa – Triethyl Gallium
    • In, TMIn – Trimethyl Indium
    • Al, TMAl – Trimethyl Aluminium
    • Al, TEAl – Triethyl Aluminium
    • Te, DIPTe – Di-isopropyl Tellure
    • Si, SiBr4 – Tetrabromure de Silicium
    • C, CBr4 – Tetrabromure de Carbone

Examples of available processes

• III-V materials (Arsenides and Phosphides) for optoelectronics
• Available materials in the following diagram