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CBE for III-N materials

CBE for III-N materials

Description

Dedicated to the growth of III-N materials

Manufacturer and model

OSEMI inc -V1    

Technical specifications

  • Equipped with purometry

  • 2" wafer, 1" wafer, 14mm2

  • Precursors:

    • N, DMH – Dimethyl Hydrazine

    • N, NH3 – Ammoniac

    • Ga, TEGa – Triethyl Gallium

    • In, TMIn – Trimethyl Indium

    • Al, TMAl – Trimethyl Aluminium

    • Al, DMAlH – Dimethyl Aluminium Hydride

    • Mg, CPMM –  Bis(MethylCycloPentaDienyl) Magnesium

    • Mg, CP2Mg – Bis(CycloPentaDienyl) Magnesium

    • Si, SiBr4 – Tetrabromure de Silicium

Examples of available processes