CBE for III-N materials

Description

Dedicated to the growth of III-N materials

Manufacturer and model

OSEMI inc -V1    

Technical specifications

• Equipped with purometry

• 2" wafer, 1" wafer, 14mm²

• Precursors:

  • N, DMH – Dimethyl Hydrazine

  • N, NH3 – Ammoniac

  • Ga, TEGa – Triethyl Gallium

  • In, TMIn – Trimethyl Indium

  • Al, TMAl – Trimethyl Aluminium

  • Al, DMAlH – Dimethyl Aluminium Hydride

  • Mg, CPMM –  Bis(MethylCycloPentaDienyl) Magnesium

  • Mg, CP2Mg – Bis(CycloPentaDienyl) Magnesium

  • Si, SiBr4 – Tetrabromure de Silicium

Examples of available processes

• III-N materials for power electronics

• Available material in the following diagram