ALD

Atomic Layer Deposition

Description

Deposition of very thin dielectric layers, passivation

Manufacturer and model

Picosun - R-200 Advanced

Technical specifications

Small samples with 200mm substrates
Deposition temperature from 21°C to 500°C
3 liquid sources at ambient temperature, 2 heated liquid sources (max 250°C), 1 reactive gas (NH₃), O+ source by indirect O₂ plasma, H+ source by N₂ plasma: indirect H₂

Examples of available processes

Deposition of 5nm of SiO₂ at 300°C from SAM.24 and O₂
Deposition of 5nm Al₂O₃ at 250°C from TMA1 and H₂O