Cobra III-V engraving processes

GaAs-résine

Semi-insulating GaAs

Selectivity with SiO2 : 40:1

Selectivity with photoresist : 9:1

Al-résine

Al evaporated

Selectivity with SiO2 : 20:1

Selectivity with photoresist : 4:1

Si-résine

Si

Selectivity with SiO2 : 3:1

Selectivity with photoresist : 0,6:1

pas d'image

InP

Selectivity with SiO2 : 15:1

Selectivity with photoresist : /