Ion implantation Varian CF3000
![Implanteur](/3it/fileadmin/_processed_/f/9/csm_Implanteur_a583057f6e.jpg)
Description
Ion implantation. Energy range from 18 keV to 200 keV
Manufacturer and model
Varian - CF3000
Technical specifications
- Highest acceleration energy : 200 kV
- Typical implantation dose : 1011 to 1015 per cm2
- Solid, gas and liquid sources
- Wafer size : 100 mm
Examples of available processes
- Implantation of : H, He, B, C, N, O, F, Mg, P, S, Cl, Ar, Mn, Zn, As, Ag, Sb, Xe, Bi
- Semi-conductor doping