Présentation

Sujets de recherche

Micro et nanoélectronique, Nanomatériaux.

Disciplines de recherche

Génie électrique et génie électronique, Génie des matériaux et génie métallurgique.

Mots-clés

CMP, Intégration système, MEMS, Microfabrication, Nanoélectronique, Procédés d'intégration 3D.

Langues parlées et écrites

Allemand, Anglais, Français, Italien

Financement

Chaire de recherche. (Obtenu). Collaborateur. NSERC/Teledyne DALSA Industrial Research Chair in Next Generation MEMS and Microphotonics. PROMPT-Québec. Teledyne Dalsa. Industrial research Chair. 700000 $ (2020-2024).

Subvention. (Obtenu). Co-demandeur. UNICO - Unsupervised spiking neural networks with analog memristive devices for edge computing. Fonds de recherche du Québec - Nature et technologies (FRQNT). CHISTERA. 300000 $ (2020-2022).

Subvention. (En cours d’évaluation). Co-demandeur. NanoSense - Fabrication of Nanoscale Photonic and Electrochemical Sensing Structures for Mobile Applications. Fonds national suisse (FNS). Projektförderung in Mathematik, Natur- und Ingenieurwissenschaften (Abteilung II). 411000 $ (2018-2022).

Subvention. (Obtenu). Collaborateur. Porous germanium Efficient Epitaxial LayEr Release (PEELER) for low cost high performance III-V solar cells. Ministère du développement économique, de l'innovation et de l'exportation (MDEIE). Saint-Augustin Canada Electric Inc. InnovEE. 750000 $ (2019-2022).

Subvention. (En cours d’évaluation). Co-demandeur. 3DInBio- 3D Integrated Low-Power Biosensing Microsystem-On-Chip for Wearable Applications. Agence Nationale pour la Recherche (ANR) (France). AAPG ANR 2017. 822000 $ (2017-2020).

Subvention. (Obtenu). Co-demandeur. Heterogeneous Integration of High-Density Analog Crossbar for Advanced Data Processing. Conseil de Recherches en Sciences Naturelles et Génie du Canada (CRSNG). Strategic Partnership Grants. 575000 $ (2017-2020).

Subvention. (En cours d’évaluation). Co-demandeur. Printed-On-Chip Chemical Sensors with integrated Tunnel-Field Effect Transistor transducers for Ultra Low Power Mobile Applications. Commission Européenne. H2020-FETOPEN-2016-2017. 4500000 $ (2017-2020).

Subvention. (En cours d’évaluation). Chercheur principal. CMP planarization processes for a Quantum Electrodynamic Simulator Device Platform. Conseil de Recherches en Sciences Naturelles et Génie du Canada (CRSNG). ENGAGE. 25000 $ (2019-2020).

Subvention. (Terminé). Co-demandeur. Complementary resistance switching in nano crossbar arrays. Fonds Québécois de la Recherche sur la Nature et les Technologies (FQRNT). Projet de recherche en équipe. 123000 $ (2013-2016).

Subvention. (Terminé). Co-demandeur. 3D heterogeneous platform with highly sensitive integrated gas sensors based on ultra-low power metal SETs circuits. NanoQuébec. Plasmionique (Industrial partner). INano. 106666 $ (2013-2015).

Subvention. (Terminé). Co-demandeur. High energy electron beam lithography for ultimate resolution. Unité Mixte Internationale UMI 3463. 100000 $ (2012-2013).

Subvention. (Terminé). Collaborateur. Single Electron Devices on CMOS technology. Conseil de Recherches en Sciences Naturelles et Génie du Canada (CRSNG). Strategic (with ANR France). 617000 $ (2009-2012).

Publications

Articles de revue

• Mehrej M*, Ecoffey S, Sadani B, Lee Sang B*, Baron T, David S, Drouin D, Salem B. (2020). A fabrication processfor self-connected horizontal SiGe nanowires. Microelectronic Engineering, 220, (Article publié).
• Najah M*, Boucherit M*, Ferguson M*, Frechette L, Charlebois S, Boone F, Ecoffey S. (2020). Estimation oftopography parameters for Gaussian surfaces with exponential autocorrelationfunction. Tribology Letters, (Article soumis).
• Beillard Y, Paquette F, Brousseau F*, Ecoffey S, Alibart F, Drouin D. (2020). Investigation ofresistive switching and transport mechanisms of Al2O3/TiO2−x memristors undercryogenic conditions (1.5 K). AIP Advances, 10(2), (Article publié).
• Blonkowski S, Labalette M*, Jeannot S, Ecoffey S, Souifi A, Drouin D. (2020). Physical Modeling of OxRRAM Complementary Resistive switching. IEEE Electron Devices Letters, (Article soumis).
• Ayele G T*, Monfray S, Ecoffey S, Boeuf F, Cloarec J P, Drouin D, Souifi A. (2018). Ultrahigh-Sensitive CMOS pH Sensor Developed inthe BEOL of Standard 28 nm UTBB FDSOI. IEEE Journal of the Electron Devices Society, 6, 1026-1032. (Article accepté).
• Labalette M*, Jeannot S, Blonkowski S, Beilliard Y, Ecoffey S, Souifi A, Drouin D. (2017). Fabrication of planarback end of line compatible HfOx Complementary Resistive Switches. IEEE Transactions on Nanotechnology, 16(5), 745 - 751. (Article publié).
• Rahhal L, Ayele G T*, Monfray S, Cloarec J-P, Fornacciari B, Padroux E, Du F, Chevalier C, Ecoffey S, Drouin D, Morin P, Garnier P, Boeuf F, Souifi A. (2017). High Sensitivity pHSensing in BEOL of industrial FDSOI Transistors. Solid-State Electronics, 134, 22-29. (Article publié).
• Bonafos C, Benassayag G, Cours R, Pecassou B, Guenery P V, Baboux N, Militaru L, Souifi A, Cossec E*, Hamga K*, Ecoffey S, Drouin D. (2017). Ion beam synthesis of indium-oxide nanocrystals for improvementof Oxide Resistive Random-Access Memories. Materials Research Express, (Article soumis).
• Droulers G*, Ecoffey S, Pioro-Ladriere, Drouin D. (2017). Metallic Single Electron Transistors: Impact of Parasitic Capacitances on Small Circuits. IEEE Transactions on Electron Devices, 64(12), 5202 - 5208. (Article publié).
• Tesega Ayele G*, Rahhal L, Monfray S, Boeuf F, Cloarec J.-P., Ecoffey S, Drouin D, Souifi A. (2017). TCAD Simulation of anIon Sensitive Field Effect Transistor with a Sensitive Gate Integrated in the Back-End-of-Lineof a Fully-Depleted Silicon-on-Insulator Industrial Platform. IEEEE Transactions on Electron Devices, (Révisions requises).
• Drouin D, Droulers G*, Labalette M*, Lee Sang B*, Harvey-Collard P*, Souifi A, Jeannot S, Monfray S, Pioro-Ladriere M, Ecoffey S. (2016). A fabrication process for emerging nanoelectronic devices based on oxide tunnel junctions. Journal of Nanomaterials, (Article publié).
• Lee Sang B*, Sadani B, Ecoffey S, Monfray S, Drouin D. (2016). CMOS compatible fabrication process ofTiN/Al2O3/TiN tunnel junctions for BEOL integration of single electron transistors. Microelectronic Engineering, (Article soumis).
• Mehrej M*, Drouin D, Baron T, Salem B, Ecoffey S. (2016). Fabrication of top-down gold nanostructures using a damascene process. Microelectronic Engineering, (Article publié).
• Ayadi Y*, Rahhal L, Vilquin B, Chevalier C, Ambris Vargas F, Ecoffey S, Ruediger A, Sarkissian A, Monfray S, Cloarec J-P, Souifi A, Drouin D. (2016). Novel concept of gas sensitivity characterization of materials suited for implementation in FET-based gas sensors. Nanoscale Research Letters, (Article publié).
• Droulers G*, Ecoffey S, Pioro-Ladriere M, Drouin D. (2016). Planar TunnelJunctions: A Time Stability Study. Journal of Vacuum Science and Technology B, (Article publié).
• Lee Sang B*, Gour M-J, Jaouad A, Ecoffey S, Darnon M, Sadani B, Souifi A, Drouin D. (2015). Inductively coupled plasma etching of ultra-shallow Si3N4 nanostructures using SF6/C4F8chemistry. Microelectronic Engineering, 141, (Article publié).
• Lee Sang B*, Gour M-J, Darnon M, Ecoffey S, Jaouad A, Sadani B, Drouin D. (2015). Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductivelycoupled plasma. Journal of Vacuum Science and Technology B, 34(2), (Article publié).
• El Hajjam K*, Bounouar M A, Baboux N, Ecoffey S, Guilmain M*, Puyoo E, Francis L A, Souifi A, Drouin D, Calmon F. (2015). Tunnel Junction Engineering for Optimized Metallic Single-Electron Transistor. IEEE Transactions on Electron Devices, 62(9), (Article publié).
• El Hajjam K*, Baboux N, Calmon F, Ecoffey S, Poncelet O, Francis L, Souifi A, Drouin D. (2014). Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunneljunction engineering. Journal of Vacuum Science and Technology A, 32, (Article publié).
• Guilmain M*, Labbaye T , Dellenbach F*, Nauenheim C , Drouin D , Ecoffey S. (2013). A damascene platform for controlled ultra-thin nanowire fabrication. Nanotechnology, 24(24), (Article publié).
• Jouvet N*, Bounouar M A, Ecoffey S, Nauenheim C, Beaumont A, Monfray S, Ruediger A, Calmon F, Souifi A, Drouin D. (2012). Recent developments on 3D intregation of metallic SET onto CMOS process for memory application. International Journal of Nanoscience, 11(4), (Article publié).
• Guilmain M*, Jaouad A, Ecoffey S, Drouin D. (2011). SiO2 shallow nanostructures ICP etching using ZEP electroresist. Microelectronic Engineering, 88, (Article publié).
• Ecoffey S, Guilmain M*, Morissette J F, Bourque F*, Pont J*, Lee Sang B*, Drouin D. (2011). Technology platform for the fabrication of titanium nanostructures. Journal of Vacuum Science and Technology B, 29(6), (Article publié).
• Ecoffey S, Pott V, Mahapatra S, Bouvet D, Fazan P, Ionescu A M. (2005). A hybrid CMOS–SET co-fabrication platform using nano-grain polysilicon wires. Microelectronic Engineering, 78 - 79, (Article publié).
• Santinacci L, Djenizan T, Hildebrand H, Ecoffey S, Mokdad H, Campanella T, Schmuki P. (2003). Selective palladium electrochemical deposition onto AFM-scratched silicon surfaces. Electrochimica Acta, 48, (Article publié).
• Ecoffey S, Bouvet D, Ionescu A M, Fazan P. (2002). Low-pressure chemical vapour deposition of nanograin polysilicon ultra-thin films. Nanotechnology, 13, (Article publié).

Articles de conférence

• Stricher R*, Gond-Charton P, Poirier J-S, Drouin D, Ecoffey S. (2020). Polysilicon CMP fordirect bonding and MEMS wafer level packaging. International Conference on Planarization Technology ICPT 2020. (Article soumis).
• Bioud Y A, Beattie M N, Boucherif A, Jellit M, Stricher R*, Ecoffey S, Patriarche G, Troadec D, Soltani A, Braidy N, Wilkins M, Valdivia C E, Hinzer K, Drouin D, Ares R. (2019). A Porous Ge/Si Interface Layer for Defect-free III-V Multi-Junction Solar Cells on Silicon. Proceedings of SPIE: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, (Article publié).
• Calvo M, Beaudin G, Mercier-Coderre L, Girault P, Rojo Romeo P, Stricher R*, Ecoffey S, Drouin D, Bœuf F, Canva M, Monfray S, Orobtchouk R, Charette P G. (2019). Improving SiliconNitride Ring Resonator Performances On 300 mm Industrial Environment For Pointof Care Applications. SPIE Photonics Europe. (Article soumis).
• Beilliard Y, Paquette F, Brousseau F*, Ecoffey S, Alibart F, Drouin D. (2019). Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-based Memristors at Cryogenic Temperature (1.5 K). IEEE Nanotechnology Materials and Devices Conferences NMDC 2019. (Article accepté).
• Elshaer A*, Stricher R*, Darnon M, Drouin D, Ecoffey S. (2019). Patterning Platinum using CMP and plasma etching industrially compatible processes. 45th International Conference on Micro and Nano Engineering MNE 2019. (Article accepté).
• Stricher R*, Elshaer A*, Drouin D, Ecoffey S. (2019). Pt and Au planarization for the fabrication of micro- and nano- structures. 23rd International Symposium on Chemical-Mechanical Planarization. (Article accepté).
• Ayele G T*, Monfray S, Ecoffey S, Boeuf F, Cloarec J P, Drouin D, Souifi A. (2018). Highly Performant Integrated pH-Sensor Using the Gate Protection Diode in the BEOL of Industrial FDSOI. IEDM 2018 - International Electron Devices Meeting. (Article accepté).
• Maalaoui A, Frenea-Robin M, Genest J, Ecoffey S, Beauvais J, Charette P, Drouin D, Cloarec J P. (2018). Towards miniaturized pH sensor based on carbon nanotubes assembled by DEP on titanium electrodes?. 2018 IEEE International Conference on Industrial Technology (ICIT). (Article publié).
• Ayele G T*, Monfray S, Ecoffey S, Boeuf F, Bon R, Cloarec J P, Drouin D, Souifi A. (2018). Ultrahigh-Sensitive and CMOS Compatible ISFET Developed in BEOL of Industrial UTBB FDSOI. Symposia on VLSI Technology. (Article accepté).
• Ayele G T*, Souifi A, Cloarec J P, Monfray S, Boeuf F, Ecoffey S, Drouin D. (2018). Ultrasensitive CMOS Electro-chemical Sensor Based on Fully Depleted SOI MOSFET. IEEE NANO 2018 International Conference on Nanotechnology. (Article publié).
• Ben Assayag G, Bonafos C, Pecassou B, Drouin D, Ecoffey S, Souifi A, Torregrosa F. (2017). Innovative OxRAMnanomemories with indium oxide nanocrystals fabricated by ultra low energy ionimplantation. European Materials Research Society Spring Meeting, E-MRS 2017. (Article publié).
• Ecoffey S, Drouin D. (2017). Nanoscale damasceneprocesses for patterning and devices fabrication. SPIE Advanced Lithography. (Article publié).
• Merhej M*, Honegger T, Ecoffey S, Bassani F, Baron T, Peyrade D, Drouin D, Salem B. (2017). Toward 3D integrationof self-assembled horizontal Si and SiGe nanowires on CMOS chip. European Materials Research Society Fall Meeting, E-MRS 2017. (Article accepté).
• Ayele G T, Monfray S, Boeuf F, Cloarec J-P, Ecoffey S, Drouin D, Puyoo E, Souifi A. (2017). UltrasensitiveExtended-Gate Ion-Sensitive-Field-Effect-Transistor Developed Utilizing anIndustrial UTBB FDSOI Platform. European Solid-State Device Research Conference, ESSDERC 2017. (Article accepté).
• Merhej M*, Drouin D, Salem B, Ecoffey S. (2016). A damascene process for gold micro- and nano- structures. 42nd International Conference on Micro and Nano Engineering, MNE 2016. (Article publié).
• Droulers G*, Ecoffey S, Pioro-Ladriere M, Drouin D. (2016). A manufacturable process for single electron charge detection, a step towards quantum computing. IEEE Xplore, (Article publié).
• Lee Sang B*, Ecoffey S, Monfray S, Drouin D. (2016). CMOS BEOL compatible process for the fabrication of single electron transistors, using TiN/Al2O3/TiNjunctions. 42nd International Conference on Micro and Nano Engineering, MNE 2016. (Article publié).
• Labalette M*, Ecoffey S, Jeannot S, Soufi A, Drouin D. (2016). HfOx complementary resistive switches. IEEE Nanotechnology Materials and Devices Conferences NMDC 2016. (Article publié).
• Souifi A, Cossec E*, Hamga K*, Guenery P-V, Troudi M, El Hajjam K*, Benea L, Baboux N, Militaru L, Hebras X, Bonafos C, Ben Assayag G, Pecassou B, Ecoffey S, Drouin D. (2016). Integration and Electrical Characterization of Indium-Oxide Nanoparticles in Oxide ResistiveRandom-Access Memories. CMOS Emerging Technologies, CMOSET 2016. (Article publié).
• Labalette M*, Ecoffey S, Blonkowski S, Jeannot S, Souifi A, Drouin D. (2016). Planar HfOx basedReRAM using nanodamascene process. NANO 2016, 13th International Conference on Nanostructured Materia. (Article publié).
• Ben Assayag G, Carles C, Bonafos C, Pecassou B, Hebras X, Schamm-Chardon S, Drouin D, Ecoffey S, Souifi A. (2016). Ultra Low Energy Ion Beam Synthesis: An Original Method for the Fabrication of Nanocrystals inDielectrics for Nanoelectronics, Nano-Optics and Plasmonic Applications. CMOS Emerging Technologies, CMOSET 2016. (Article publié).
• Ayadi A*, Lee Sang B*, Sadani B, El Hajjam K*, Ecoffey S, Calmon F, Souifi A, Drouin D. (2015). 3D integration of double gate single electron transistors in the CMOS Back-End-Of-Line for ultra-low power gas sensing. 17th Canadian Semiconductor Science and Technology Conference, CSSTC 2015. (Article publié).
• Drouin D, Bounouar M A, Droulers G*, Labalette M*, Pioro-Ladriere M, Souifi A, Ecoffey S. (2015). 3D microelectronic with BEOL compatible devices. IEEE Xplore, (Article publié).
• Labalette M*, Ecoffey S, Drouin D. (2015). Fabrication of nanoplanar resistive RAM devices using the nanodamascene process. 17th Canadian Semiconductor Science and Technology Conference, CSSTC 2015. (Article publié).
• Ayadi Y*, Rahhal L, Vilquin B, Chevalier C, Ambris Vargas F, Ecoffey S, Ruediger A, Sarkissian A, Monfray S, Cloarec J-P, Drouin D, Souifi A. (2015). Novel concept of gas sensitivity characterization of materials suited for implementation in FET-based gas sensors. 6th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs, Micro&Nano. (Article publié).
• Droulers G*, Ecoffey S, Pioro-Ladriere M, Drouin D. (2015). Planar Tunnel Junctions: A Time Stability Study. 17th Canadian Semiconductor Science and Technology Conference, CSSTC 2015. (Article publié).
• Ionescu M, Ayadi Y*, Cote C, Ecoffey S, Nouar R, Wolfe S, Drouin D, Porter R, Sarkissian A. (2015). Plasma and Vacuum Assisted Synthesis of Nanostructured Carbon Allotropes and Applications to Gas Sensors. Graphene Canada. (Article publié).
• Droulers G*, Ecoffey S, Pioro-Ladriere M, Drouin D. (2015). Quantum Cellular Automata: Design and Fabrication with the Nanodamascene Process. 41st International Conference on Micro and Nano Engineering, MNE 2015. (Article publié).
• Drouin D, Droulers G*, Labalette M*, Lee Sang B*, Harvey-Collard P, Pioro-Ladriere M, Ecoffey S. (2015). The nanodamascene process: a versatile fabrication technique. IEEE Xplore, (Article publié).
• Droulers G*, Ecoffey S, Guilmain M*, Souifi A, Pioro-Ladriere M, Drouin D. (2014). Damascene Planar Metal-Insulator-Metal Tunnel Junctions. IEEExplore, (Article publié).
• Lee Sang B*, Jaouad A, Ecoffey S, Darnon M, Gour M-J, Sadani B, Souifi A, Drouin D. (2014). Inductively Coupled Plasma Etching of Ultra-Shallow Si3N4 and SiO2 Nanostructures. 40th International Conference on Micro and Nano Engineering, MNE 2014. (Article publié).
• Drouin D, Ecoffey S, El Hajjam K*, Lee Sang B*, Sadani B, Harvey-Collard P, Valverde L*, Labalette M*, Calmon F, Souifi A. (2014). Integration of nanoelectronic devices within BEOL of CMOS circuit. European Materials Research Society Fall Meeting, E-MRS 2014. (Article publié).
• Lee Sang B*, Gour M-J, Darnon M, Ecoffey S, Jaouad A, Sadani B, Souifi A, Drouin D. (2014). Selective Dry Etching of Titanium Nitride Nanostructures with Chlorine-Based Inductively Coupled Plasma. 40th International Conference on Micro and Nano Engineering, MNE 2014. (Article publié).
• El Hajjam K*, Baboux N, Ecoffey S, Francis L, Souifi A, Calmon F, Drouin D. (2013). Crested Barrier Tunnel Junctions Using PEALD Al2O3/HfO2 Stackings. 13th International Conference on Atomic Layer Deposition ALD 2013. (Article publié).
• Ecoffey S, Guilmain M*, Nauenheim C, Drouin D. (2013). Nanometer scale titanium structures planarization. 18th International Symposium on Chemical-Mechanical Planarization. (Article publié).
• Souifi A, Jouvet N, Ecoffey S, Guilmain M*, Naueunheim C, Ruediger A, Beaumont A, Calmon F, Monfray S, Drouin D. (2012). 3D integration of low power nanoelectronic devices above CMOS circuits. Nanoscale Science & Technology, NANOST12. (Article publié).
• Ecoffey S, Guilmain M*, Droulers G*, Landry S*, Nauenheim C, Ruediger A, Drouin D. (2012). Chemical mechanical planarization of titanium micro and nano-structures. 38th International Conference on Micro and Nano Engineerin MNE 2012. (Article publié).
• Griveau D, Ecoffey S, Parekh R M, Bounouar M A, Calmon F, Beauvais J, Drouin D. (2012). Single Electron CMOS-Like One Bit Full Adder. IEEE Xplore, (Article publié).
• Bounouar M A, Calmon F, Beaumont A, Guilmain M*, Xuan W, Ecoffey S, Drouin D. (2011). Single Electron Transistor Analytical Model for Hybrid Circuit Design. IEEE Xplore, (Article publié).
• Ecoffey S, Morissette J F, Guilmain M*, Bourque F*, Pont J, Lee Sang B, Drouin D. (2011). Top-down approaches for the fabrication of titanium nanostructures. 55th International Conference on Electron, Ion, and Photon Beam Technology, and Nanofabrication EIPBN 2011. (Article publié).
• Ecoffey S, Morissette J F, Jedidi N, Guilmain M*, Nauenheim C, Drouin D. (2011). Ultrathin Titanium Passive Devices Fabrication. IEEE Xplore, (Article publié).
• Guilmain M*, Jaouad A, Ecoffey S, Drouin D. (2010). Nanoscale SiO2 ICP etching. 36th International Conference on Micro- and Nano-Engineering MNE 2010. (Article publié).

Autres contributions

Activités de collaboration internationale

• Researcher. (2012-2022). Canada.
• Researcher. (2012-2022). France.