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PECVD reactors

PECVD STS

The 3IT.Nano platform has two PECVD reactors

PECVD #1

Description

Deposition of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide and amorphous silicon. Possibility of phosphorus, boron or german doping.

Manufacturer & model

STS - MESC Multiplex

Technical specifications

  • Deposition temperature: from 20°C to 380°C
  • Frequencies: 13.56 MHz or 380 kHz; Possibility of using a mixed frequency mode
  • Maximum power: 1 kW @ 380 kHz, 300 W @ 13.56 MHz
  • Gases installed on the system: NH₃, Ar, N₂, B₂H₆ (diluted to 10% in H₂), GeH₄, CH₄, O₂, PH₃ (diluted to 10% in Ar), N₂O, SiH₄,
  • Sample size: substrates up to 200 mm in diameter; compatible with small samples

Examples of available processes

  • Deposition of insulating layers for the production of transistor grids
  • Deposition for the manufacture of implantation or engraving masks
  • Deposition of doped SiO₂ for the manufacture of waveguides
PECVD BenchMark

PECVD #2

Description

The PECVD BenchMark is a plasma assisted thin film deposition system. It is mainly used for depositing thin layers of silicon oxide and nitride less than one micrometer thick.

Manufacturer & model

BenchMark - 800-II

Technical specifications

  • Samples or substrate deposition up to 200mm (8in) in diameter
  • Software interface for process editing and control

Examples of processes available

  • Silicon nitride (SiNxHz)
  • Silicon oxide (SiOx)

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