CVD reactor materials group IV CVD Equipment

Description

Equipment dedicated to the growth of group IV semiconductor materials (SiGe, GeSn, C “graphene”) by chemical vapor deposition.

Manufacturer & model

CVD Equipment J8302

Technical specifications

• 100 mm rotating substrate holder: one substrate at a time
• 100 mm substrate holder: 25 substrates at a time
• Operating temperature: 950 ºC

• Precursors:

  HCl - Hydrochloric acid (cleaning)

  CH4 - Metane (Graphene)

  B2H6 – Diborane (dopant)

  PH3 – Phosphine (dopant)

  SiH4 - Silane

  Ge2H6 – Digermane

  GeH4 - Germane

• Carrier gases:

  N2 - Nitrogen

  H2 - Hydrogen