CBE for III-N materials

Description

Dedicated to the growth of III-N materials

Manufacturer & model

OSEMI inc -V1    

Technical specifications

• Equipped with purometry
• 2" wafer, 1" wafer, 14mm²
• Precursors:
  • N, DMH – Dimethyl Hydrazine
  • N, NH3 – Ammoniac
  • Ga, TEGa – Triethyl Gallium
  • In, TMIn – Trimethyl Indium
  • Al, TMAl – Trimethyl Aluminium
  • Al, DMAlH – Dimethyl Aluminium Hydride
  • Mg, CPMM –  Bis(MethylCycloPentaDienyl) Magnesium
  • Mg, CP2Mg – Bis(CycloPentaDienyl) Magnesium
  • Si, SiBr4 – Tetrabromure de Silicium

Examples of available processes

• III-N materials for power electronics
• Available material in the following diagram