Cathode sputtering device - Emitech K550

Description

Deposition of thin metallic layers by a cathode sputtering process using argon plasma

Manufacturer & model

Emitech K550

Technical specifications

• Plasma generated by a magnetron type source operating at low voltage (100 to 150 V DC), not requiring cooling of the target or the sample holder (temperature increase of the sample less than 10°C during the process);
• Gold-Palladium Target (Au-Pd 60-40);
• Process gas: argon (3.5 x 10-1 mbar);
• Maximum sample diameter: 6 cm, compatible with small samples

Examples of available processes

• Metallic deposits on poorly conductive materials for observations by electron microscopy
• Manufacturing of alignment marks for lithographic processes
• Fabrication of metal grids in nanostructures