Boucherif, Abderraouf

Professeur, Faculté de génie
FAC. GÉNIE Mécanique

Coordonnées

Courriel


819-821-8000, poste 63109

Diplômes

(2010) Pseudosubstrats accordables en paramètre de maille à base de silicium poreux pour l’hétéroépitaxie de matériaux IV-IV et III-V. Doctorate (Ph.D. Material Science). Institut National des Sciences Appliquées de Lyon.

(2007) Master's Thesis (MSc). Universite Jean Monnet.

(2005) Bachelor's (Bachelor's degree). Universite Jean Monnet.

Expérience académique

(2018) Assistant Professor. Université de Sherbrooke.

(2017-2018) Adjunct Professor and Senior Research Scientist. Université de Sherbrooke.

(2018) Invited scientist. Polytech Orleans.

(2014-2017) Research Scientist. Université de Sherbrooke.

(2012-2014) Research Associate. Université de Sherbrooke.

(2010-2012) Research/Postdoctoral Fellow. Université de Sherbrooke.

(2007-2010) Research Assistant (Ph.D.). Institut National des Sciences Appliquées de Lyon.

(2006-2007) Research Assistant (MSc.). National Research Council Canada.

Présentation

Sujets de recherche

Energy Storage, Micro and Nanoelectronics, Nanomaterials.

Disciplines de recherche

Material Engineering and Metallurgic Engineering, Mechanical Engineering, Physical Engineering.

Mots-clés

Heterogeneous integration, Group IV semiconductors, Lattice engineering, Porous semiconductors, Silicon anodes for Lithium-ion Batteries, Epitaxy, III-V Materials, green photonics, Phtotovoltaics, Graphene, Nanocomposites, Energy storage, IoT.

Intérêts de recherche

My research interests include the synthesis and characterization of semiconductor nanomaterials and thin films for optoelectronics, energy, quantum and IoT applications. More specifically, I work on the synthesis of nanoporous silicon and germanium by self-organized electrochemical porosification to create novel nanoscale morphologies, study their properties for applications such as: i) Hetero-integration of discimilar semiconductors ii) for layer transfer process to create light and flexible photonic and photovoltaic devices, iii) Anodes for high-energy, high-power Li-ion batteries. I also work on the growth and characterization of semiconductors films, nanostructures and 2D materials (Graphene) by epitaxy (CVD, MBE, CBE). More recently, I developped nanocomposites materials that combine 2D materials such as graphene with porous semiconductor and study their properties for future applications in photovoltaics and Li-ion batteries.

Langues parlées et écrites

Anglais, Français

Prix et distinctions

  • (2020) Research work featured in Compound semiconductor Magazine. compound semiconductors. (Citation).
  • (2019) Best poster award. Canadian Semiconductor Science and Technology Conference. (Prize / Award).
  • (2018) Guest scientist. Université d'Orleans. (Distinction).
  • (2018) Popular science prize. Université de Sherbrooke. (Prize / Award).
  • (2017) Best presentation award. Canadian Semiconductor Science and Technology Conference. (Prize / Award).
  • (2017) Initiative-Innovation. Université de Sherbrooke. (Distinction).
  • (2015) Public Choice Poster Award. Next Generation Solar Photovoltaics Canada. (Prize / Award).
  • (2009) Best Young Scientist Award. European Material Research Society. (Prize / Award).
  • (2008) First Runner-up Poster Award. Porous Semiconductors Science and Technology. (Prize / Award).
  • Tremplin Prize. Université de Sherbrooke. (Prize / Award).

Financement

Grant. (Under Review). Co-applicant. Training innovation leaders in ADvanced Microelectronics for future InfoRmation tEchnologies - ADMIRE. Natural Sciences and Engineering Research Council of Canada (NSERC). CREATE. 1 $ (2020-2026).

Grant. (Under Review). Principal Investigator. Masques contre covid19. Natural Sciences and Engineering Research Council of Canada (NSERC). Alliance. 50000 $ (2020-2021).

Publications

Articles de revue

  • El‐Gahouchi, M.; Aziziyan, M.R.; Arès, R.; Fafard, S.; Boucherif, A. (2020). Cost‐effective energyharvesting at ultra‐high concentration with duplicated concentratedphotovoltaic solar cells. Energy Science & Engineering, 8, 2760–2770. (Published).
  • Poungoue Mbeunmi, A. B. *; El-Gahouchi*, M. ; Arvinte*, R. ; Jaouad, A. Cheriton, R. Wilkins, M. Valdivia, C.E. Hinzer, K. Fafard, S. ; Aimez,V. ; Boucherif, A. (2020). Direct growth of GaAssolar cells on Si substrate via mesoporous Si buffer. Solar Energy Materials and Solar Cells, 217, 110641. (Published).
  • Youcef, Bioud; MaximeRondeau; Abderraouf, Boucherif; Gilles Patriarche; Dominique Drouin; RichardArès. (2020). Effect of sintering germanium epilayers on dislocation dynamics: from theory to experimental observation. Acta Materialia, (In Press).
  • Mourad Jellite, Maxime Darnon, Roxana Arvinte, Mohammad Reza Aziziyan, Denis Machon, Abderraouf Boucherif, and Richard Arès. (2020). Surface preparation of porous Si – graphene nanocomposites for heteroepitaxy. JVST, 38(5), 423. (Published).
  • Fandio, D.; Sauze, S*.; Boucherif, A.; Arès, R.; Ilahi, B.; Morris, D. (2020). Terahertz photoconductivity and photocarrier dynamics in graphene–mesoporous silicon nanocomposites. PHYSICAL REVIEW B, 102, 115. (Published).
  • T.M. Diallo, A.B. Poungoué M., M. El-Gahouchi, M. Jellite, R. Arvinte, M.R. Aziziyan, R. Arès, S. Fafard, A. Boucherif. (2019). Hybrid Epitaxy Technique for the Growth of High Quality AlInAs and InGaAs Layers on InP Substrates. Journal of Vacuum Science & Technology B, (031208), (Published).
  • Y. A. Bioud, M. Rondeau, A. Boucherif, D. Drouin and R. Arès. (2019). Sintering of Nanoporous Germanium for Defect Reduction in Ge on – Si Epitaxial Layers. APL Materials, (Submitted).
  • A. Juneau-Fecteau, R. Savin, A. Boucherif, and L. G. Fréchette. (2019). Tamm Phonon-Polaritons: Localized states from phonon-light interactions. Applied Physics Letters, 114, 141101. (Published).
  • Bioud YA, Boucherif A, Paradis E, Soltani A, Drouin D, Arès R. (2019). Uprooting defects to enablelight-emitting III-V on Si. Nature Communications, 10, 4322. (Published).
  • York M CA, Mailhot A*, Boucherif A, Arès R, Aimez V, Fafard S. (2018). Challenges and strategies for implementing the vertical epitaxial heterostructure architechture (VEHSA) design for concentrated photovoltaic applications. Solar Energy Materials and Solar Cells, 181, 46-52. (Published).
  • Kolhatkar G, Boucherif A, Boucherif AR, Dupuy A, Fréchette LG, Arès R, Ruediger A. (2018). Extreme temperature stability of thermally insulating graphene-mesoporous-silicon nanocomposite. Nanotechnology, 29(14), 145701. (Published).
  • G. Kolhatkar, A. Boucherif, A.R. Boucherif, A. Dupuy, L. G. Fréchette, R. Arès. (2018). Extreme temperature stability of thermally insulating graphene-porous-silicon nanocomposite. Nanotechnology, 29(14), 145701. (Published).
  • Boucherif A, Radescu S, Are?s R, Mujica A, Me?linon P, Machon D. (2018). Metastable States in Pressurized Bulk and Mesoporous Germanium. The Journal of Physical Chemistry C, 122(20), 10929-10938. (Published).
  • Beattie M, Bioud Y A, Hobson D, Boucherif A, Valdivia C, Drouin D, Arès R, Hinzer K. (2018). Tunable conductivity in mesoporous germanium. Nanotechnology, 29(21), 215701. (Published).
  • Wilkins M, Gupta J, Jaouad, Bouzazi B, Fafard S, Boucherif A, Valdivia C, Arès R, Aimez V, Schriemer H, Hinzer K. (2017). Design of thin InGaAsN (Sb) nip junctions for use in four-junction concentrating photovoltaic devices. Journal of Photonics for Energy, 7(2), 022502-022502. (Published).
  • Bioud Y*, Boucherif A, Belarouci A, Paradis E, Fafard S, Aimez V, Drouin D, Arès R. (2017). Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching. Electrochimica Acta, 232, 422-430. (Published).
  • Boucherif A.R*, Boucherif A, Kolhatkar G, Ruediger A, Arès R. (2017). Graphene–Mesoporous Si Nanocomposite as a Compliant Substrate for Heteroepitaxy. Small, 13(18), 1603269. (Published).
  • Kolhatkar G, Boucherif A, Boucherif AR, Dupuy A, Fréchette L, Arès R, Ruediger A. (2017). Thermal conductivity ofgraphene-stabilized mesoporous silicon nanocomposite by Raman spectroscopy. ACS NANO, (Submitted).
  • Bioud Y*, Boucherif A, Belarouci A, Paradis E, Drouin D, Arès R. (2016). Chemical composition of nanoporous layer formed by Electrochemical Etching of p-Type GaAs. Nanoscale Research Letters, 11(1), 446. (Published).
  • Kolhatkar G*, Boucherif A, Dab A, Fafard S, Aimez V, Arès R, Ruediger A. (2016). Composition Variation in Al-Based Dilute Nitride alloys Using Apertureless Scanning Near-Field Microscopy. RCS Physical Chemistry Chemical Physics, 18(44), 30546-30553. (Published).
  • Kolhatkar G*, Boucherif A, Bioud Y*, Fafard S, Ruediger A, Aimez V, Arès R. (2016). Electrical and structural properties of AlGaNAs alloys grown by chemicalbeam epitaxy. Physica Status Solidi (b), 253(5), 918–922. (Published).
  • Paquette B*, Boucherif A, Aimez V, Arès R. (2016). Novel multijunction solar cell design for low cost, high concentrationsystems. Progress in Photovoltaics: Research & Applications, 24(2), 150-158. (Published).
  • Kolhatkar G*, Boucherif A, Fafard S, Aimez V, Arès R. (2014). Growth optimization and optical properties of AlGaNAs alloys. Journal of Applied Physics, 115, 163513. (Published).
  • Boucherif A, Korinek A, Aimez V, Arès R. (2014). Near-Infrared emission from Mesoporous Crystalline Germanium. AIP Advances, 4, 107128. (Published).
  • Kolhatkar G*, Boucherif A, Valdivia C.E, Wallace S.G, Fafard S, Aimez V, Arès R. (2013). Al-enhanced N incorporation in GaNAs alloys grown by Chemical BeamEpitaxy. Journal of Crystal Growth, 380, 256-260. (Published).
  • Blaffard F*, Boucherif A, Aimez V, Arès R. (2013). Control of mesoporoussilicon initiation by cathodic passivation. Electrochemical communications, 36, 84. (Published).
  • Tutashkonko S*, Boucherif A, Nychyporuk T, Kaminski-Cachopo A, Arès R, Lemiti M, Aimez V. (2013). Mesoporous Germanium formed by bipolar electrochemical etching. Electrochimica Acta, 88, 256-262. (Published).
  • Boucherif A, Beaudin G, Aimez V, Arès R. (2013). Mesoporous germanium morphology transformation for lift-off process andsubstrate re-use. Applied Physics Letter, 102, 011915. (Published).
  • Wilkins M, Boucherif A, Beal R, Haysom J.E, Wheeldon J.F, Aimez V, Arès R, Hall .J, Hinzer K. (2013). Multijunction Solar Cells using Silicon Bottom Subcell and Porous SiliconCompliant Membrane. IEEE Photovoltaics, 3(3), 1125 - 1131. (Published).
  • Paquette B*, DeVita M, Turala A, Kolhatkar G, Boucherif A, Jaouad A, Aimez V, Arès R. (2013). Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions. Journal of Crystal Growth, 374, 1-4. (Published).
  • Boucherif A, Blanchard N.P, Regreny P, Marty O, Guillot G, Grenet G, Lysenko V. (2010). Straining of SiGeultra-thin films with meso-porous Si substrates. Applied Physics Letter, 97, 131910. (Published).
  • Boucherif A, Blanchard N.P, Regreny P, Marty O, Guillot G, Grenet G, Lysenko V. (2010). Tensile strainengineering of Si thin films using porous Si substrates. Thin Solid Films, 518, 2466–2469. (Published).
  • Lysenko V, Ostapenko D, Bluet J.M, Regregny P, Mermoux M, Boucherif A, Marty M, Grenet G, Skryshevsky V, Guillot G. (2009). Straining of crystalline silicon thin films by stress generating bulk porous silicon substrates. Physica Status Solidi (A), 206, 1255-1258. (Published).
  • Boucherif A, Ban D, Luo H, Dupont E, Liu H.C, Wasilewski R.Z, Paltiel Y. (2008). InAsSb basedmid-infrared optical upconversion devices. IEE Electron Letters, 44, 312-313. (Published).
  • Fathololoumi S, Ban D, Luo H, Dupont E, Laframboise S.R, Boucherif A, Liu H.C. (2008). Thermal behavior investigation of terahertz quantum cascade lasers. IEEE Journal of Quantum Electronics, 44, 1139-1144. (Published).

Chapitres de livre

  • N.P. Blanchard, A. Boucherif, P. Regreny, A. Danescu, H. Magoariec, O. Marty, J. Penuelas, G. Guillot, V. Lysenko and G. Grenet. (2011). Engineering pseudosubstrates with porous silicon technology. Semiconductor-On-Insulator Materials for NanoElectronics Applications (Springer, 45-65). Springer. (Published).

Articles de journaux

  • S. Fathololoumi, D. Ban, H. Luo, E. Dupont, S. R. Laframboise, A. Boucherif, H. C. Liu. (2008). Thermal behavior investigation of terahertz quantum cascade lasers. IEEE Journal of Quantum Electronics. 1139.

Articles de conférence

  • Colin C*, Jaouad A, Darnon M, De Lafontaine* M, Volatier M, Boucherif A, Arès R, Fafard S, Aimez V. (2017). The handling of thin substrates and its potential for new architectures in multi-junction solar cells technology. AIP Conference Proceedings. 040001. (Published).
  • Boucherif, Abderrahim Rahim and Rondeau, Maxime and Pelletier, Hubert and Provost, Philippe-Olivier and Boucherif, Abderraouf and Dubuc, Christian and Maher, Hassan and Ar{\`e}s, Richard. (2016). Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors. Journal of Vacuum Science \& Technology B, 02L116. (Published).
  • Cheriton, Ross Wilkins, Matthew M. Sharma, Pratibha Valdivia, Christopher E. Trojnar, Anna H. Schriemer, Henry Hinzer, Karin Gupta, James Bouzazi, Boussairi Kolhatkar, Gitanjali Boucherif, Abderraouf Jaouad, Abdelatif Fafard, Simon Aimez, Vincent Arès, Richard. (2015). Design optimizations of InGaAsN(Sb) subcells for concentrator photovoltaic systems. Journal of Vacuum Science & Technology B, (Published).
  • Paquette B, DeVita M, Turala, A and Kolhatkar G, Boucherif, A, Jaouad A, Wilkins M, Wheeldon JF, Walker AW, Hinzer K et. al. (2013). Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells. AIP conference proceedings, 48--52. (Published).

Propriétés intellectuelles

Patents

  • Abderraouf Boucherif, Richard Arès. Defect tolerant, high performances multijunction solar cell design for ultra high concentration. P1467US00. United States. (Pending).
  • Multijunction solar cell and method for forming the same***” (2013), en rédaction.

Autres contributions

Cours enseignés

  • Genèse et caractérisation des couches minces. GMC 761. (2012-09-18 à 2012-12-18). Niveau : Graduate. (2CR).
  • Nano-caractérisation des semi-conducteurs. GMC 760. (2011-09-15 à 2011-12-15). Niveau : Graduate.
  • Physics Lab for engineers (electricity, electronics, optics, mechanics). (2007-11-06 à 2010-06-11). Niveau : Undergraduate.

Gestion d'évènements

  • Organizer. (2020). Industry academia workshop within the framwork of the Porous germanium Efficient Epitaxial LayErRelease for low cost high performance III-V solar cells (PEELER). (Workshop).
  • co-organizer. (2019). Functional nanomaterials: joint uSherbrooke - uMontpellier 3 days workshop. (Workshop).

Activités de collaboration internationale

  • Member,. (2010-2022). France. Laboratoire des Nanotechnologies et des Nanosystemes (LN2)I am an active member of the international joint unit between Canada (uSherbrooke) and France (CNRS) named: which is located at the 3IT. This gives me access to a large number of resources and expertise through the large CNRS network in France. I also participate since 2008 and every 2 years to the dedicated workshops which is an excellent opportunity for networking with researchers from europe and particularly from France.

Présentations

  • Boucherif, A. (2020). Towards cost effective III-V photovoltaics with advanced substrate engineering. Photonics West. San Francisco, United States.
  • (2019). Enabling III-V photovoltaics on Silicon with nanoscale substrate engineering. European Material Research Society E-MRS. Warsaw, Poland.
  • S. Sauze*, N. Semmar, A. Stolz, P. Brault, A. Boucherif, and R. Arès. (2019). Thermoelectric properties of thin films of Graphene-Mesoporous Semiconductor Nanocomposites. European conference on Thermoelectrics (ECT 2019). Limassol, Cyprus.
  • (2019). Towards cost effective III-V photovoltaics with advanced substrate engineering. Photonics north. Quebec, Canada.
  • Y. A. Bioud*, A. Boucherif, E. Paradis, A. Soltani, D. Drouin and R. Ares. (2018). DEFECT-FREE, HETERO-EPITAXY THROUGH ELECTROCHEMICAL ETCHING OF GERMANIUM FOR MULTIJUNCTION SOLAR CELLS. Porous semiconductor science and technology. Grande Motte, France.
  • A. Dupuy*, J. Nava-Avendano, J. Veilleux, R. Ares, S. Fafard, A. Boucherif. (2018). Graphene - mesoporous germanium nanocomposite as anode for lithium-ion batteries. Porous Semiconductor Science and Technolgy. Grande Motte, France.
  • S. Sauze*, A. Stolz, N. Semmar, G. Kolhatkar, A. Ruediger, A. Korinek, N. Braidy, S. Fafard, R. Ares, A. Boucherif. (2018). Graphene – mesoporous Si or Ge nanocomposites for thermoelectric applications. Porous Semiconductor Science and Technolgy. Grande Motte, France.
  • (2018). Nanocomposites à base de graphène pour les applications en énergie. École Nationale Polytechnique. Algeria.
  • D. J. Jubgang Fandio, S. Sauze, R. Ares, A. Boucherif, and D. Morris. (2018). Terahertz spectroscopy of graphene-mesoporous silicon nanocomposites. Porous Semiconductor Science and Technology. Grande Motte, France.
  • Boucherif A, Sauze S*, Boucherif A R*, Dupuy A*, Kolhatkar A*, Ruediger A, Fafard S, Arès R. (2017). Combining graphene with 3D crystalline nanostructures: a new family of nanocomposites. Nanotoday. Hawaii, United States.
  • Boucherif A, Sauze S*, Boucherif A R*, Dupuy A*, Kolhatkar A*, Ruediger A, Fafard S, Arès R. (2017). Graphene-porous semiconductor nanocomposites scalable synthesis for energy applications. NanoCanada. Montreal, Canada.
  • Bioud Y, Boucherif A, Belarouci A, Paradis E, Fafard S, Aimez V, Drouin D, Arès R. (2016). Chemical composition of anodically formed p-type porous gaas in hf-based electrolyte. Porous semiconductors science and technology (PSST). Tarragona, Spain.
  • Bioud Y*, Boucherif A, Belarouci A, Paradis E, Fafard S, Aimez V, Drouin D, Arès R. (2016). Synthesis of mesoporous Ge films by high frequency bipolar electrochemical etching. Porous semiconductors science and technology (PSST). Tarragona, Spain.
  • Boucherif A, Kolhatkar G, Ruediger A, Arès R. (2016). Virtual substrates engineering with graphene coated porous Si for multijunction solar cells. Emerging Technologies Conference, (CMOSET). montreal, Canada.
  • Boucherif A, Beaudin G, Aimez V, Arès R. (2015). Free standing Ge seed films by using nanoporous group IV semiconductors. North American MBE Conference 2015. Cancun, Mexico.
  • Boucherif A, Jaouad A, Cheriton R, Han S, Wilkins M, Valdivia C, Haysom J, Hinzer K, Fafard S, Aimez V, Arès R. (2015). GaAs solar cells on Mesoporous Silicon templates. 11th International Conference on Concentrator Photovoltaic Systems (CPV11). Aix-les-Bains, France.
  • Boucherif A, Fafard S, Aimez V, Arès R. (2015). Virtual substrates engineering using porous Si and Ge nanostructures. the 9th International Conference on Silicon Epitaxy. Montreal, Canada.
  • Boucherif A, Aimez V, Arès R. (2014). Lift-off process of III-V multijunction solar cells by using porous Ge sacrificial layers. Next Generation Solar Photovoltaics Canada. montreal, Canada.
  • Boucherif A. (2014). Nanostructures for advanced concentrated photovoltaics (CPV). Nanostructures for Sensing and Energy Conversion NaSEC’14. Algiers, Algeria.
  • Zribi J, Boucherif A, Paquette B, Ilahi B, Morris D, Arès R. (2013). Chemical Beam Epitaxy gowth tuning of vertically stacked InAs/GaAs quantum dots for intermediate band solar cell. 9th International Conference on Concentrating Photovoltaic Systems. Miyazaki, Japan.
  • Kolhatkar G, Boucherif A, Fafard S, Aimez V, Arès R. (2013). Morphology study of GaNAs and AlGaNAs grown by chemical beam epitaxy. 30th North American Molecular Beam Epitaxy Conference. Banf, Canada.
  • Kolhatkar G, Boucherif A, Fafard S, Aimez V, Arès R. (2013). Morphology study of GaNAs and AlGaNAs grown by chemical beam epitaxy. 30th North American Molecular Beam Epitaxy Conference. Banf, Canada.
  • Boucherif A, Aimez V, Arès R. (2013). Nanoheteroepitaxy of GaAs on nanoporous Si templates. 30th North American Molecular Beam Epitaxy Conference. Banf, Canada.
  • Paquette B, Boucherif A, Aimez V, Arès R. (2013). Novel low current, low heat flux multijunction solar cell design to maximize concentration and reduce costs. 9th International Conference on Concentrating Photovoltaic Systems. Miyazaki, Japan.
  • Boucherif A,Tutashkonko S, Nychyporuk T, Kaminski-Cachopo A, Lemiti M, Aimez V, Arès R. (2012). Epitaxial Growth of III-V Semiconductors on Porous Germanium for Layer Transfer Process of multijunction solar cells. 8th International Conference on Concentrating Photovoltaic Systems. Toledo, Spain.
  • Tutashkonko S, Boucherif A, Nychyporuk T, Kaminski-Cachopo A, Arès R, Aimez V, Lemiti M. (2012). Structural and morphological study of mesoporous Germanium layers formed by bipolar electrochemical etching. The Electrochemical Society. Hawaii, United States.
  • Boucherif A, Blanchard N, Regreny P, Danescu A, Magoarie H, Marty O, Penuelas J, Bluet J.M, Guillot G, Lysenko V, Grenet G. (2010). Engineering pseudosubstrates with porous silicon technology. Joint 6th SemOI Workshop & 1st Ukrainian-French SOI Seminar. Kieve, Ukraine.
  • Boucherif A, Blanchard N, Regreny P, Marty O, Guillot G, Grenet G, Lysenko V. (2010). Stress generating porous silicon substrates: a new tool for lattice engineering of thin films. Porous Semiconductors Science and Technology Conference. Valencia, Spain.
  • Boucherif A. (2010). Synthesis and applications of porous Si. Industrial seminar at SOITEC inc. Grenoble, France.

Les informations disponibles dans la base de données Expertus sont tirées du CV commun canadien.