Présentation

Sujets de recherche

Interactions rayonnement-matière, Nanomatériaux, Optique et photonique, Phénomènes quantiques, Semiconducteurs.

Disciplines de recherche

Génie physique, Physique.

Mots-clés

dispositifs micro/nano/quantiques, laser à impulsions, nanostructures semiconductrices, optique et photonique, optoélectronique, phénomènes ultrarapides, propriétés optiques et électroniques des solides, semiconducteurs, spectroscopies optique et térahertz.

Intérêts de recherche

Spectroscopies résolues en temps - Études fondamentales de nanostructures - Développements de technologies térahertz et applications aux nanomatériaux - Dispositifs photovoltaïques.

Langues parlées et écrites

Anglais, Français

Prix et distinctions

• (1997) Nouveau Chercheur du FQRNT. Fonds de recherche du Québec - Nature et technologies (FRQNT). (Distinction).
• (1993) Boursier postdoctoral. Fonds de recherche du Québec - Nature et technologies (FRQNT). (Distinction).

Publications

Articles de revue

• Ilahi* B., Nasr O., Paquette B., Alouane M.H. Hadj, Chauvin N., Salem B., Sfaxi L., Bru-Chevalier C., Morris D., Ares R., Aimez V. and Maaref H. (2016). Thermally activated inter-dots carriers' transfer inInAs QDs with InGaAs underlying layer: origin and dependence on the post-growthintermixing. Journal of Alloys and Compounds 656 (2016) 132-137 / http://dx.doi.org/10.1016/j.jallcom.2015.09.231, 656, 132-137. (Article accepté).
• Branko Petrov*, André Fekecs*, Christian Sarra-Bournet, Richard Arès, Denis Morris. (2015). Terahertz Emitters and Detectors Made on High-Resistivity InGaAsP:Fe Photoconductors. IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, (Article soumis).
• André Fekecs, Martin Chicoine, Bouraoui Ilahi, Anthony J. SpringThorpe, François Schiettekatte, Denis Morris, Paul G. Charette, Richard Arès. (2015). Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 359, 99-106. (Article publié).
• Fekecs André, Korinek Andreas, Chicoine, Martin, Ilahi Bouraoui, Schiettekatte François, Morris Denis, and Arès Richard. (2015). Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure. Phys. Status Solidi A, 212(9), 1888-1896. (Article publié).
• Alouane MH, Helali A, Morris D., Maaref H., Aimez V., Salem B., Gendry M., and Ilahi B. (2014). Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution. Journal of Luminescence, 145, 595--599. (Article publié).
• Beaudoin* A., Salem B., Baron T., Gentile P., and Morris D. (2014). Impact of n-type doping on the carrier dynamics of silicon nanowires studied using optical-pump terahertz-probe spectroscopy. Physical Review B, 89(11), 115316. (Article publié).
• Schicho Sandra, Jaouad Abdelatif, Sellmer Christian, Morris Denis, Aimez Vincent, and Arès Richard. (2013). Black germanium produced by inductively coupled plasma etching. Materials Letters, 94, 86--88. (Article publié).
• Zribi* Jihene, Ilahi* Bouraoui, Morris Denis, Aimez Vincent, and Arès Richard. (2013). Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers. Journal of Crystal Growth, 384, 21--26. (Article publié).
• Roy-Guay* David, Pioro-Ladrière Michel, Morris Denis, Tallaire Alexandre, Achard Jocelyn, and Drouin Dominique. (2012). Cathodoluminescence and Photoluminescence of NV Centers. International Journal of Nanoscience, 11(04), 1240016-1240020. (Article accepté).
• Zribi* Jihene, Morris Denis, and Arès Richard. (2012). Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy. Journal of Vacuum Science \& Technology B, 30(5), 051207. (Article publié).
• Kumar Surjith, Allard* Jean-Francois, Morris Denis, Dory Yves L., Lepage Martin, and Zhao Yue. (2012). Near-infrared light sensitive polypeptide block copolymer micelles for drug delivery. J. Mater. Chem., 22(15), 7252--7257. (Article publié).
• Fekecs André, Bernier* Maxime, Morris Denis, Chicoine Martin, Schiettekatte François, Charette Paul, and Arès Richard. (2011). Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices. Optical Materials Express, 1(7), 1165--1177. (Article accepté).
• Allard* Jean-François, Cornet Alain, Debacq Christophe, Meurens Marc, Houde Daniel, and Morris Denis. (2011). Improved detection sensitivity of D-mannitol crystalline phase content using differential spectral phase shift terahertz spectroscopy measurements. Optics express, 19(5), 4644--4652. (Article publié).
• Alouane Hadj MH, Ilahi B., Maaref H., Salem B., Aimez V., Morris D., and Gendry M. (2011). Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing. Journal of nanoscience and nanotechnology, 11(10), 9251--9255. (Article publié).
• Farhi* G., Morris D., Charlebois SA, and Raskin J.-P. (2011). The impact of etched trenches geometry and dielectric material on the electrical behaviour of silicon-on-insulator self-switching diodes. Nanotechnology, 22(43), 435203. (Article publié).
• Alouane MH Hadj, Ilahi B., Maaref H., Salem B., Aimez V., Morris D., Turala A., Regreny P., and Gendry M. (2010). Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes. Journal of Applied Physics, 108(2), 024317. (Article publié).
• Dupuy* E., Pauc N., Morris D., Gendry M., and Drouin D. (2010). Low-Voltage Cathodoluminescence as a High Spatial Resolution Technique for Nanostructure Characterization. Microscopy and Microanalysis, 16(S2), 820--821. (Article publié).
• Zaâboub Z., Ilahi B., Salem B., Aimez V., Morris D., Sfaxi L., and Maaref H. (2010). Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots. Journal of Applied Physics, 107(12), 124306. (Article publié).
• Savard* S., Allard* J-F, Bernier* M., Petersen JC, Dodge JS, Fournier P., and Morris D. (2010). Photoexcited carrier relaxation dynamics and terahertz response of photoconductive antennas made on proton bombarded GaAs materials. Journal of Applied Physics, 108(12), 124507. (Article publié).
• Babin Jérôme, Pelletier Maxime, Lepage Martin, Allard* Jean-François, Morris Denis, and Zhao Yue. (2009). A New Two-Photon-Sensitive Block Copolymer Nanocarrier. Angewandte Chemie International Edition, 48(18), 3329--3332. (Article publié).
• Dupuy* E, Morris D., Pauc N., Aimez V., Gendry M., and Drouin D. (2009). Carrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging. Applied Physics Letters, 94(2), 022113. (Article publié).
• Dupuis Alexandre, Allard* Jean-François, Morris Denis, Stoeffler Karen, Dubois Charles, and Skorobogatiy Maksim. (2009). Fabrication and THz loss measurements of porous subwavelength fibers using a directional coupler method. Optics express, 17(10), 8012--8028. (Article publié).
• Ilahi B, Zaâboub Z., Salem B., Morris D., Aimez V., Sfaxi L, and Maaref H. (2009). Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing. Materials Science in Semiconductor Processing, 12(1), 71--74. (Article publié).
• Mir Youssef, van Lier Johan E, Allard* Jean-François, Morris Denis, and Houde Daniel. (2009). Two-photon absorption cross section of excited phthalocyanines by a femtosecond Ti-sapphire laser. Photochemical \& Photobiological Sciences, 8(3), 391--395. (Article publié).
• Za\^aboub, Z and Ilahi, B and Sfaxi, L and Maaref, H and Salem, B and Aimez, V and Morris, D. (2008). Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots. Nanotechnology, 19(28), 285715. (Article publié).
• Zaâboub, Z and Ilahi, B and Sfaxi, L and Maaref, H and Salem, B and Aimez, V and Morris, D. (2008). Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots' intermixing. Physics Letters A, 372(26), 4714--4717. (Article publié).
• Chateauneuf, M and Dubois, J and Allard, J and Houde, D and Morris, D. (2007). Detection of explosives using THz time domain spectroscopy. PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 6796(2), 6796. (Article publié).
• Farhi, G and Saracco, E and Beerens, J and Morris, D and Charlebois, SA and Raskin, J-P. (2007). Electrical characteristics and simulations of self-switching-diodes in SOI technology. Solid-State Electronics, 51(9), 1245--1249.
• Salem, Bassem and Morris, D and Aimez, V and Beauvais, J and Houde, D. (2006). Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials. Semiconductor science and technology, 21(3), 283. (Article publié).
• Ilahi, B and Salem, B and Aimez, V and Sfaxi, L and Maaref, H and Morris, D. (2006). Post-growth engineering of InAs/GaAs quantum dots' band-gap using proton implantation and annealing. Nanotechnology, 17(15), 3707. (Article publié).
• Salem, B and Morris, D and Salissou, Y and Aimez, V and Charlebois, S and Chicoine, M and Schiettekatte, F. (2006). Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources. Journal of Vacuum Science \& Technology A, 24(3), 774--777. (Article publié).
• Jiang, Jinqiang and Tong, Xia and Morris, Denis and Zhao, Yue. (2006). Toward photocontrolled release using light-dissociable block copolymer micelles. Macromolecules, 39(13), 4633--4640. (Article publié).
• Parys, Benjamin and Allard, JF and Morris, D and P\'epin, C and Houde, Daniel and Cornet, Alain. (2005). Assessment of the spectral interference method applied to the stretching measurement of diffused laser pulses. Journal of Optics A: Pure and Applied Optics, 7(5), 249. (Article publié).
• Salem, B and Aimez, V and Morris, D and Turala, A and Regreny, P and Gendry, M. (2005). Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing. Applied Physics Letters, 87(24), 241115--241115. (Article publié).
• Barba, D and Salem, B and Morris, D and Aimez, V and Beauvais, J and Chicoine, M and Schiettekatte, F. (2005). Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/ InGaAs/ InP. Journal of applied physics, 98(5), 054904. (Article publié).
• Salem, B and Morris, D and Aimez, V and Beerens, J and Beauvais, J and Houde, D. (2005). Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates. Journal of Physics: Condensed Matter, 17(46), 7327. (Article publié).
• Aimez, Vincent and Beauvais, Jacques and Beerens, J and Morris, Denis and Lim, HS and Ooi, Boon-Siew. (2002). Low-energy ion-implantation-induced quantum-well intermixing. Selected Topics in Quantum Electronics, IEEE Journal of, 8(4), 870--879. (Article publié).
• M\'enard, S and Beerens, J and Morris, D and Aimez, V and Beauvais, J and Fafard, S. (2002). Magneto-photoluminescence study of intermixed self-assembled InAs/GaAs quantum dots. Journal of Vacuum Science \& Technology B, 20(4), 1501--1507. (Article publié).
• Lobo, C and Perret, N and Morris, D and Zou, J and Cockayne, DJH and Johnston, MB and Gal, M and Leon, R. (2000). Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs (311) B quantum dots. Physical Review-Section B-Condensed Matter, 62(4), 2737--2742. (Article publié).
• Lobo, C and Perret, N and Morris, D and Zou, J and Cockayne, DJH and Johnston, MB and Gal, M and Leon, R. (2000). Carrier capture and relaxation in Stranski-Krastanow In x Ga 1- x As/GaAs (311) B quantum dots. Physical Review B, 62(4), 2737.
• Perret, Nathalie and Morris, Denis and Franchomme-Foss\'e, Loic and C\^ot\'e, Ren\'e and Fafard, Simon and Aimez, Vincent and Beauvais, Jacques. (2000). Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots. Physical Review B, 62(8), 5092. (Article publié).
• Morris, D and Perret, N and Fafard, S. (1999). Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots. Applied Physics Letters, 75(23), 3593--3595. (Article publié).
• Lavallee, E and Beauvais, J and Drouin, D and Beerens, J and Morris, D and Chaker, M. (1999). Fabrication of silicide structures by silicide direct-write electron-beam lithography process (SiDWEL) on thin silicon nitride membranes and on tantalum substrates. Electronics Letters, 35(23), 2027--2028. (Article publié).
• G\"u\ccl\"u, AD and Rejeb, C and Maciejko, R and Morris, D and Champagne, A. (1999). Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure. Journal of applied physics, 86(6), 3391--3397. (Article publié).
• Parenteau, M and Carlone, C and Morris, D and Khanna, SM. (1997). Time-resolved spectroscopy of irradiated n-GaAs. Nuclear Science, IEEE Transactions on, 44(6), 1849--1855. (Article publié).
• Xu, Zhi Zhong and Morris, D. (1996). Electron-electron inter-subband scattering in GaAs quantum wells. Canadian journal of physics, 74(12), 252--255. (Article publié).
• Deveaud, B and Morris, D and Regreny, A and Barros, MRX and Becker, P and Gerard, JM. (1994). Quantum-mechanical versus semiclassical capture and transport properties in quantum well laser structures. Optical and quantum electronics, 26(7), S679--S689. (Article publié).
• Deveaud, B and Morris, D and Regreny, A and Planet, R and Gerard, JM and Barros, MRX and Becker, P. (1994). Ultrafast relaxation of photoexcited carriers in quantum wells and superlattices. Semiconductor Science and Technology, 9(5S), 722. (Article publié).
• Deveaud, B and Chomette, A and Morris, D and Regreny, A. (1993). Carrier capture in quantum wells. Solid state communications, 85(4), 367--371. (Article publié).
• Morris, D and Deveaud, B and Regreny, A and Auvray, P. (1993). Electron and hole capture in multiple-quantum-well structures. Physical Review B, 47(11), 6819. (Article publié).
• Morris, D and Benson, E and Dubowski, JJ. (1993). Low-temperature photoluminescence study of Cd< sub> 1- x Mn< sub> x Te films grown by pulsed laser evaporation and epitaxy. Surface science, 294(3), 373--380. (Article publié).
• Barros, MRX and Becker, PC and Morris, D and Deveaud, B and Regreny, A and Beisser, F. (1993). Ultrafast optical evidence for resonant electron capture in quantum wells. Physical Review B, 47(16), 10951. (Article publié).
• Roth, AP and Morris, D and Sun, Q and Lacelle, C and Wasilewski, Z and Maigne, P and Bensaoula, A. (1992). Anisotropy in InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE. Journal of crystal growth, 120(1), 212--217. (Article publié).
• Morris, D and Deveaud, B and Chomette, A and Regreny, A. (1992). CARRIER CAPTURE MECHANISMS IN MULTIPLE QUANTUM WELLS STRUCTURES. International Conference on the Physics of Semiconductors, 996. (Article publié).
• Morris, D and Deveaud, B and Chomette, A and Regreny, A. (1992). Centre National d'Études des Télécommunications, LAB/OCM 22301 LANNION FRANCE. Comptes Rendus, 21, 996. (Article publié).
• Morris, D and Sun, Q and Lacelle, C and Roth, AP and Brebner, JL and Simard-Normandin, M and Rajan, K. (1992). Structure property anisotropy in lattice-mismatched single heterostructures. Journal of applied physics, 71(5), 2321--2327.
• Hetherington, DW and Hinrichsen, PF and Masut, RA and Morris, D and Roth, AP. (1991). Channeling and photoluminescence measurements of heteroepitaxial layers of In x Ga1-x As. Canadian Journal of Physics, 69(3-4), 378--385. (Article publié).
• Sun, Q and Lacelle, C and Morris, D and Buchanan, M and Marshall, P and Chow-Chong, P and Roth, AP. (1991). Effects of substrate misorientation on anisotropic electron transport in InGaAs/GaAs heterostructures. Applied physics letters, 59(11), 1359--1361. (Article publié).
• Leonelli, R and Morris, D and Brebner, JL and Jiaqi, Duan and Roth, AP and Lacelle, C. (1991). Time-resolved photoluminescence study of InGaAs-GaAs single heterostructures. Canadian Journal of Physics, 69(3-4), 456--460. (Article publié).
• Soucail, B and Dupuis, N and Ferreira, R and Voisin, P and Roth, AP and Morris, D and Gibb, K and Lacelle, C. (1990). Electron minibands and Wannier-Stark quantization in an In 0.15 Ga 0.85 As-GaAs strained-layer superlattice. Physical Review B, 41(12), 8568. (Article publié).
• Roth, AP and Lacelle, C and Morris, D and Longeart, M. (1990). Magneto-photoluminescence of a quasi 2-D electron-hole gas in InGaAsGaAs strained quantum wells. Superlattices and Microstructures, 8(2), 239--244. (Article publié).
• Morris, D and Lacelle, C and Roth, AP and Maigne, P and Brebner, JL. (1990). Optical and structural characterization of InGaAs/GaAs superlattices with increasing number of periods. Surface science, 228(1), 347--350. (Article publié).
• Sun, Qing and Morris, D and Lacelle, C and Roth, AP. (1989). Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe. MRS Proceedings, 160, 783. (Article publié).
• Roth, P and Sacilotti, MA and Masut, RA and Morris, D and Young, J and Lacelle, C and Fortin, E and Brebner, JL. (1989). The effects of substrate orientation on the optical properties of InGaAs epitaxial layers grown by low-pressure metal organic vapour-phase epitaxy. Canadian Journal of Physics, 67(4), 330--338. (Article publié).
• S.H. Pan, H. Shen, Z. Hang, F.H. Pollak, W. Zhuang, Q. Xu, A.P. Roth, R.A. Masut, C. Lacelle, and D. Morris. (1988). Photoreflectance and Phototransmittance of Narrow Well Strained Layer Coupled Multiple Quantum Well Structures. Physical Review B, 38(5), 3375-3382. (Article publié).
• Roth, AP and Morris, D and Masut, RA and Lacelle, C and Jackman, JA. (1988). Binding energy of shallow acceptors in In x Ga 1-x As GaAs strained quantum wells. Physical Review B, 38(11), 7877. (Article publié).
• Morris, D and Roth, AP and Masut, RA and Lacelle, C and Brebner, JL. (1988). Photoluminescence study of strain relaxation in Ga1- xInxAs/GaAs single heterostructures. Journal of applied physics, 64(8), 4135--4140.
• Morris, Denis and Teyssedou, Alberto and Lapierre, Jean and Tapucu, Altan. (1987). Optical fiber probe to measure local void fraction profiles. Applied optics, 26(21), 4660--4664. (Article publié).

Chapitres de livre

• Morris, D and Deveaud, B and Regreny, A and Auvray, P. (1994). Ultrafast Dynamics of Electronic Capture and Intersubband Relaxation in GaAs Quantum Well. Quantum Well Intersubband Transition Physics and Devices (433--442). Springer. (Article publié).
• Roth, AP and Masut, R and Morris, D and Lacelle, C. (1988). Extrinsic Photoluminescence in Unintentionally and Magnesium Doped GaInAs/GaAs Strained Quantum Wells. Properties of Impurity States in Superlattice Semiconductors (271--283). Springer. (Article publié).

Articles de conférence

• Morris D.; Mavel A.; Chauvin N.; Gendry M. (2015). Carrier Dynamics in Pure Wurtzite InP Nanowires Studied Using Optical-PumpTerahertz-Probe Spectroscopy. Conference program, (Article publié).
• G. Dion*, P.-L. Karsenti, C. Sarra-Bournet, C.-Y. Côté, L.-P. Belley, M. Bouvier, and D. Morris. (2015). GaAs-based photoswitches with long photocarrier lifetime. 17th Canadian Semiconductor Science and Technology Conference. (Article publié).
• Petrov* B.; Kyrytsya* V.; Arès R. ; Fekecs* A.; Chicoine M.; Schiettekatte F.; Morris D. (2015). Terahertz generationand detection using small gap materials triggered at 1550 nm. 17th Canadian Semiconductor Science and Technology Conference, Sherbrooke, 16-21 August 2015. (Article publié).
• Alexandre Beaudoin*, Bassem Salem, Thierry Baron, Pascal Gentile, Denis Morris. (2014). Carrier dynamics in silicon nanowires studied using optical-pump terahertz-probe spectroscopy. APS March Meeting 2014, abstract #B50.002, (Article publié).
• Roy-Guay* David; Ruediger Andreas; Plathier Julien; Childress Lilian; Morris Denis; Pioro-Ladrière Michel. (2014). Nitrogen vacancy centers for nanoscale magnetic field mapping of micromagnets. APS March Meeting 2014, abstract #D8.006, (Article publié).
• Petrov* Branko; Fekecs André; Chicoine Martin; Schiettekatte Francois; Arès Richard; Morris Denis. (2014). Photoconductive ultrafast low gap materials: pulsed THz emitters and detectors. APS March Meeting 2014, abstract #T44.007, (Article publié).
• A. Fekecs, B. Ilahi, M. Chicoine, F. Schiettekatte, D. Morris, and R. Arès. (2013). Structural Fingerprints in Temperature-dependentHall Measurements after Ion Implantation Amorphization and Recrystallization ofInGaAsP/InP. 25th International Conference on Amorphous and Nano-crystalline Semiconductors. (Article publié).
• Malekabadi S. Ali; Boone F.; Deslandes D.; Morris D.; and Charlebois S. (2013). Low-loss low-dispersive high-resistivity silicon dielectric slab waveguide for THz region. IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 1--3. (Article publié).
• Tutashkonko* O., Chauvin N., Patriarche G., Gendry M., and Morris D. (2012). Effect of doping on the structural and optical properties of Be-doped and Si-doped InP nanowires grownon silicon. 6th Nanowire Growth Workshop. (Article publié).
• Tutashkonko* O., Morris D., Gendry M. (2012). Radial p-n junction into InP nanowires grown onsilicon substrate for photovoltaic applications. Next Generation Solar 2012 – Photovoltaics Canada – Third National Scientific Conference. (Article publié).
• Roy-Guay* D., Tallaire A., Drouin D., Pioro-Ladrière M., Morris D. (2012). Cathodoluminescence mapping of NV centers. 17th International Winterschool on New Developments in Solid State Physics. (Article publié).
• Martin M; Brown ER; Mangeney J.; Fekecs A.; Arès R.; and Morris D. (2012). Critical comparison of carrier lifetime at 1.55 µm of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs: GaAs. 978-1-4673-1598-2, 1--2. (Article publié).
• Kim* C.-K., Bernier* M., Morris D. (2011). A time-resolved reflectivity study of (001) GaAs surfaces passivatedwith self-assembled monolayers of long chain thiols. 13th Photonic North Conference, Ottawa (Ontario) Canada, May 16-18, 2011. (Article publié).
• Zribi* J., Morris D., and Arès R. (2011). Growth and characterizationof InAs/GaAs quantum dots for photovoltaic applications. Photovoltaic Canada Second National Scientific Conference, part of the 13th Photonic North Conference. (Article publié).
• Morris D. (2011). Minority carrier lifetime measurements on doped GaInP ternary layers. Photovoltaic Canada Second National Scientific Conference, part of the 13th Photonic North Conference. (Article publié).
• Bernier* M., Morris D. (2011). Modeling time-resolved reflectivity measurements for the investigation of photocarrier dynamics in ion-bombarded GaAs substrates. 13th Photonic North Conference. (Article publié).
• Fekecs Andre; Bernier* Maxime; Chicoine Martin;Schiettekatte François; Charette Paul; Arès Richard; and Morris Denis. (2011). Characteristics of Terahertz Antenna Pulsed Sources Made on Fe-Implanted InGaAsP/InP Photoconductive Materials. OSA Technical Digest (CD) (Optical Society of America, 2011), STuC6. (Article publié).
• Fekecs A., Bernier* M., Chicoine M., Schiettekatte F., Charette P., Arès R., Morris D. (2010). MeV Fe ion implantation of InGaAsP/InPheterostructures for terahertz time-domain spectroscopy applications. The 17th International Conference on Ion Beam Modification of Materials (IBMM 2010), Montréal, Québec, Canada, August 22 to 27, 2010. (Article publié).
• M. H. Hadj Alouane, B. Ilahi, H. Maaref, B. Salem, V. Aimez, D. Morris, and M. Gendry. (2010). Temperature dependent PL properties of InAs/InPquantum dashes submitted to low energy P+ ion implantation andsubsequent annealing. Proceeding de la 3rd Int. Conf. on Nanostructures Self-Assembly NanoSEA 2010, Congress Center, Cassis, French Riviera, 28 June - 2 July 2010. (Article publié).
• Fekecs A.,Bernier* M., Chicoine M., Schiettekatte F.,Charette P., Arès R., Taillon Y., Houde D., Morris D. (2010). Ultrafast InGaAsP for a portable terahertz timedomain spectroscopy system. CIPI Annual Meeting. (Article publié).
• Tutashkonko* O.; Naji K.; Salem B.; Gendry M.; Morris D. (2010). Growth and doping of InP and GaAs nanowires on Silicon for photovoltaic applications. 5th Nanowire Growth Workshop (NWG 2010). (Article publié).
• Dupuy* E.; Pauc N.; Drouin D. ;Xu G.; Gendry M.; Morris, D. (2009). High resolution imaging of InAs/InP single quantum dots by low-voltage cathodoluminescence. Indium Phosphide & Related Materials, 2009. IPRM '09, 355--357. (Article publié).
• Dupuy, E and Xu, G and Regreny, P and Robach, Y and Gendry, M and Patriarche, G and Chauvin, N and Bru-Chevallier, C and Morris, D and Pauc, N and others. (2008). Influence of surface reconstructions on the shape of InAs quantum dots grown on InP (001). Indium Phosphide and Related Materials, 2008. IPRM 2008, 1--3. (Article publié).
• Blanchard, Francois and Razzari, Luca and Sharma, Gargi and Morandotti, Roberto and Keiffer, Jean-Claude and Ozaki, Tsuneyuki and Reid, Matt and Tiedje, Henry F and Haugen, Harold K and Morris, Denis. (2007). Generation of High Power Terahertz Pulses at Advanced Laser Light Source (ALLS). CThI5.
• Blanchard, Francois and Bandulet, Heidi-Christina and Razzari, Luca and Sharma, Gargi and Morandotti, Roberto and Kieffer, Jean-Claude and Ozaki, Tsuneyuki and Reid, Matt and Tiedje, Henry and Haugen,. (2007). High-Power Terahertz Pulses at the Advanced Laser Light Source (ALLS) Laboratory. ME5.
• Allard, Jean-Fran\ccois and Savard, S and Spiegel, Judith and Huynen, Isabelle and Salissou, Y and Salem, B and B\'echamp-Lagani\`ere, X and Aimez, V and Charlebois, SA and Houde, D and others. (2007). High frequency dielectric properties measurements of polymeric films using time-domain terahertz spectroscopy.
• Farhi, G and Beerens, J and Morris, D and Charlebois, SA and Raskin, Jean-Pierre. (2006). First Report on Self-Switching-Diodes in SOI. 149--150.
• Savard, S and Fournier, P and Morris, D. (2006). Terahertz Radiation from YBa 2 Cu 3 O 7-$\delta$ Thin Film Antenna on LaAlO 3 Substrate. 209--209.
• Salem, Bassem and Morris, Denis and Aimez, Vincent and Beerens, Jean and Beauvais, Jacques and Houde, Daniel. (2005). High-performance terahertz source using ion implanted photoconductive antenna. Integrated Optoelectronic Devices 2005. 193--198.
• Morris, Denis and Perret, Nathalie and Riabinina, Daria A and Beerens, Jean and Aimez, Vincent and Beauvais, Jacques and Fafard, Simon. (2003). Dynamics of photo-excited carriers in self-assembled quantum dots. Proc. SPIE 4833, Applications of Photonic Technology 5, 705 (February 1, 2003); doi:10.1117/12.473944. 705--710.
• Aimez, V and Beauvais, J and Beerens, J and Morris, D. (2002). Development of a spatially selective, high resolution quantum well intermixing (HRQWI) method based on low energy ion implantation. Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE. 847--848.
• Aimez, Vincent and Beauvais, Jacques and Drouin, Dominique and Beerens, Jean and Morris, Denis and Jandl, Serge. (2001). Low-energy ion implantation-induced control of InP-based heterostructure properties. International Symposium on Optical Science and Technology. 95--104. (Article publié).
• Perret, Nathalie and Morris, Denis and Franchomme-Fosse, Loic and Fafard, Simon. (2000). Controlling the optical transition linewidth of a self-assembled quantum dot ensemble. Lasers and Electro-Optics, 2000.(CLEO 2000). 314. (Article publié).
• Rejeb, C and Maciejko, Romain and Leonelli, Richard and Morris, D. (2000). Optical properties of In1-x GaxAsyP1-y multiple quantum well heterostructure lasers. 2000 International Conference on Application of Photonic Technology (ICAPT 2000). 579--596.
• Rejeb, C and Maciejko, Romain and Morris, D and Makino, Toshihiko. (1998). Carrier dynamics in InGaAsP MQW laser structures. 1998 International Conference on Applications of Photonic Technology. 1065--1070. (Article publié).
• de Barros, MRX and Becker, PC and Morris, D and Deveaud, B and Regreny, A and Beisser, FA. (1993). Ultrafast optical studies of carrier capture in GaAs/AlGaAs quantum wells. Quantum Electronics and Laser Science Conference. QWH31.
• Pan, SH and Shen, H and Hang, Z and Pollak, FH and Zhuang, Weihua and Xu, Qian and Roth, AP and Masut, RA and Lacelle, C and Morris, D. (1988). Photoreflectance and Phototransmittance of Narrow Well Strained Layer InxGa1-xAs/GaAs Coupled Multiple Quantum Well Structures. 1988 Semiconductor Symposium. 150--158.

Autres contributions

Gestion d'évènements

• organizing commitee. 17th Canadian Semiconductor Science and Technology Conference 2015. (Conférence).
• Évaluateur - résumé. Congrès de l'ACFAS, 2011. (Conférence).
• co-chair session on Photonic Sensor. Photonics North - May 2014. (Conférence).

Présentations

• (2015). Carrier Dynamics in Pure Wurtzite InP Nanowires Studied Using Optical-Pump Terahertz-Probe Spectroscopy. 17th Canadian Semiconductor Science and Technology Conference, Sherbrooke, 16-21 August 2015. Sherbrooke.
• (2015). Carrier dynamics in semiconductor nanowires studied using optical-pump terahertz-probe. Congrès de l'ACP 2015- Abstract ID: 583,. Edmonton.
• (2011). Émetteurs et détecteurs de radiation térahertz pulsée: principe et applications. École d’été du Regroupement Québécois Étudiant sur les Matériaux de Pointe (RQÉMP), Lumière et Matière. Magog.
• (2011). Techniques de génération d’impulsions térahertz intenses pour la spectroscopie THz et ses applications. Congrès de l'ACFAS, Colloque sur la Science Laser Ultrarapide-Femto-Atto-Zeptoseconde (FAZS). Sherbrooke.
• (2010). Carrier transport and relaxation mechanisms in III-V semiconductor solar cell structures investigated using time-resolved optical measurements. Grande Conférence du RQMP. Montréal.