Hassan Maher

Financement

• Subvention. New generation of robust GaN based PA circuits for 6G millimeter wave E-Band – Sky-GaN. Agence Nationale de la Recherche (Paris, France). 656 159 EUR. (2025-2029).
  Numéro de subvention : ANR-24-CE51-3137. Voir plus
• Subvention. Intégration monolithique de fonctions dédiées à la puissance sur technologie à base de nitrure de Gallium. Natural Sciences and Engineering Research Council (Ottawa, Canada). 25 000 $. (2023-2024).
  Numéro de subvention : 580795-2022. Voir plus
• Subvention. Nouvelles filière de composants GaN. Natural Sciences and Engineering Research Council (Ottawa, Canada). 33 000 $. (2022-2023).
  Numéro de subvention : RGPIN-2020-07052. Voir plus
• Subvention. Site-selective fabrication of quantum nanostructures. Natural Sciences and Engineering Research Council (Ottawa, Canada). 25 000 $. (2022-2023).
  Numéro de subvention : 580914-2022. Voir plus
• Subvention. Integrated photon autocorrelation and micro-photoluminescence spectroscopy for developing solid-state quantum light emitters for quantum applications. Natural Sciences and Engineering Research Council (Ottawa, Canada). 149 482 $. (2022-2023).
  Numéro de subvention : RTI-2023-00571. Voir plus
• Subvention. Advanced back end processing for high breakdown voltage and low thermal resistance GaN power transistor. Natural Sciences and Engineering Research Council (Ottawa, Canada). 96 000 $. (2020-2021).
  Numéro de subvention : 497994-2016. Voir plus
• Subvention. Combination of Vertical and Horizontal GaN Transistors for Efficient Power Conversion Electronics – C-PI-GaN. Agence Nationale de la Recherche (Paris, France). 681 087 EUR. (2019-2022).
  Numéro de subvention : ANR-18-CE05-0045. Voir plus
• Subvention. Équipement de salle blanche pour la fabrication de composants micro et nano-électroniques. Canada Foundation for Innovation (Ottawa, Canada). 110 000 $. (2017).
  Numéro de subvention : 36553. Voir plus
• Subvention. Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits – ED-GaN. Agence Nationale de la Recherche (Paris, France). 784 998 EUR. (2016-2020).
  Numéro de subvention : ANR-16-CE24-0026. Voir plus
• Subvention. Nouveaux composants à base de GaN (Nitrure de Gallium). Natural Sciences and Engineering Research Council (Ottawa, Canada). 110 000 $. (2015-2020).
  Numéro de subvention : RGPIN-2015-03765. Voir plus
• Subvention. GaN technology used for the fabrication of stable and high efficiency rectifier. Natural Sciences and Engineering Research Council (Ottawa, Canada). 25 000 $. (2015-2016).
  Numéro de subvention : 477877-2015. Voir plus
• Subvention. Technologie GaN pour des applications de puissance. Natural Sciences and Engineering Research Council (Ottawa, Canada). 25 000 $. (2013-2014).
  Numéro de subvention : 449525-2013. Voir plus
• Subvention. Mise au point d’une technologie de fabrication de circuits ultra basse consommation destinés aux objets communicants autonomes. Fonds de Recherche du Québec – Nature et Technologies (Montreal, Canada). 68 100 $. (2013-2015).
  Numéro de subvention : 173586. Voir plus
• Subvention. Équipements requis dans le cycle de fabrication des circuits MMIC à base de HEMT-GaN. Natural Sciences and Engineering Research Council (Ottawa, Canada). 150 000 $. (2012-2014).
  Numéro de subvention : 440231-2013. Voir plus

Publications

Articles

• Simon St-Jacques, Mariyam Salmi, Oleh Fesiienko, Erwine Pargon, Ali Soltani, Bassem Salem, Hassan Maher. (2026). Air Gaps Fabrication for Sub-100 nm GaN HEMTs by Novel SF6 Plasma Etching. Microelectronics. DOI
• Zahraa Zaidan, Nedal Al Taradeh, Mohammed Benjelloun, Christophe Rodriguez, Ali Soltani, Josiane Tasselli, Karine Isoird, Luong Viet Phung, Camille Sonneville, Dominique Planson, Yvon Cordier, Frédéric Morancho, Hassan Maher. (2024). A Novel Isolation Approach for GaN-Based Power Integrated Devices. Micromachines. DOI
• Kumari, S., Singh, R., Kumar, S., Murty, N.V.L.N., Planson, D., Raynaud, C., Sonneville, C., Morel, H., Phung, L.V., Ngo, T.H., De Mierry, P., Frayssinet, E., Cordier, Y., Maher, H., Sommet, R., Nallatamby, J.-C., Raja, P.V. (2024). Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates. Semiconductor Science and Technology. DOI
• Richard, O., Soltani, A., Adhiri, R., Ahaitouf, A., Maher, H., Aimez, V., Jaouad, A. (2024). Impact of PECVD deposition on dielectric charge and passivation for n-GaN/SiOx interfaces. Results in Materials. DOI
• Benjelloun, M., Zaidan, Z., Soltani, A., Gogneau, N., Morris, D., Harmand, J.-C., Maher, H.M. (2023). Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications. IEEE Access. DOI
• N’Dohi, A.J.E., Sonneville, C., Saidi, S., Ngo, T.H., De Mierry, P., Frayssinet, E., Cordier, Y., Phung, L.V., Morancho, F., Maher, H., Planson, D. (2023). Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode. Crystals. DOI
• Fesiienko, O., Petit-Etienne, C., Darnon, M., Soltani, A., Maher, H., Pargon, E. (2023). Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices. Journal of Vacuum Science and Technology A Vacuum Surfaces and Films. DOI
• Soltani, A., Benbakhti, B., Gerbedoen, J.-C., Khediri, A., Maher, H., Salvestrini, J.-P., Ougazzaden, A., Bourzgui, N.E., Barkad, H.A. (2022). A cost-effective technology to improve power performance of nanoribbons GaN HEMTs. Applied Physics Letters. DOI
• Ngo, T.H., Comyn, R., Chenot, S., Brault, J., Damilano, B., Vézian, S., Frayssinet, E., Cozette, F., Defrance, N., Lecourt, F., Labat, N., Maher, H., Cordier, Y. (2022). Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors. Solid State Electronics. DOI
• Raja, P.V., Raynaud, C., Sonneville, C., Eric N'Dohi, A.J., Morel, H., Phung, L.V., Ngo, T.H., De Mierry, P., Frayssinet, E., Maher, H., Tasselli, J., Isoird, K., Morancho, F., Cordier, Y., Planson, D. (2022). Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. Microelectronics Journal. DOI
• Raja, P.V., Raynaud, C., Sonneville, C., Morel, H., Phung, L.V., Ngo, T.H., De Mierry, P., Frayssinet, E., Maher, H., Cordier, Y., Planson, D. (2022). Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes. Micro and Nanostructures. DOI
• El Hadi Khediri, A., Benbakhti, B., Gerbedoen, J.-C., Maher, H., Jaouad, A., Bourzgui, N.E., Soltani, A. (2022). Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices. Applied Physics Letters. DOI
• Eric N'Dohi, A.J., Sonneville, C., Phung, L.V., Ngo, T.H., De Mierry, P., Frayssinet, E., Maher, H., Tasselli, J., Isoird, K., Morancho, F., Cordier, Y., Planson, D. (2022). Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications. Aip Advances. DOI
• Ngo, T.H., Comyn, R., Chenot, S., Brault, J., Nemoz, M., Vennéguès, P., Damilano, B., Vézian, S., Frayssinet, E., Cozette, F., Defrance, N., Lecourt, F., Labat, N., Maher, H., Cordier, Y. (2022). Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors. Journal of Crystal Growth. DOI
• Beye, M.L., Wickramasinghe, T., Mogniotte, J.F., Phung, L.V., Idir, N., Maher, H., Allard, B. (2021). Active gate driver and management of the switching speed of gan transistors during turn-on and turn-off. Electronics Switzerland. DOI
• Taradeh, N.A., Frayssinet, E., Rodriguez, C., Morancho, F., Sonneville, C., Phung, L.-V., Soltani, A., Tendille, F., Cordier, Y., Maher, H. (2021). Characterization of m-gan and a-gan crystallographic planes after being chemically etched in tmah solution. Energies. DOI
• Chafi, A., Idir, N., Videt, A., Maher, H. (2021). Design Method of PCB Inductors for High-Frequency GaN Converters. IEEE Transactions on Power Electronics. DOI
• Rolland, G., Rodriguez, C., Gommé, G., Boucherif, A., Chakroun, A., Bouchilaoun, M., Pepin, M.C., Hamidi, F.E., Maher, S., Arès, R., Macelwee, T., Maher, H. (2021). High power normally-off gan/algan hemt with regrown p type gan. Energies. DOI
• Khediri, A., Talbi, A., Jaouad, A., Maher, H., Soltani, A. (2021). Impact of III-Nitride/Si interface preconditioning on breakdown voltage in GaN-on-silicon HEMT. Micromachines. DOI
• Cozette, F., Hassan, B., Rodriguez, C., Frayssinet, E., Comyn, R., Lecourt, F., Defrance, N., Labat, N., Boone, F., Soltani, A., Jaouad, A., Cordier, Y., Maher, H. (2021). New barrier layer design for the fabrication of gallium nitride-metalinsulator- semiconductor-high electron mobility transistor normally-off transistor. Semiconductor Science and Technology. DOI
• Albany, F., Lecourt, F., Walasiak, E., Defrance, N., Curutchet, A., Maher, H., Cordier, Y., Labat, N., Malbert, N. (2021). Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology. Microelectronics Reliability. DOI
• Gommé, G., Cutivet, A., Bouzazi, B., Boucherif, A.R., MacElwee, T., Rodriguez, C., Bouchilaoun, M., Pelletier, H., Provost, P.-O., Maher, H., Ares, R. (2020). AlN grown by CBE for power device applications. Aip Advances. DOI
• Huong, N.T., Comyn, R., Chenot, S., Brault, J., Damilano, B., Vézian, S., Frayssinet, E., Cozette, F., Rodriguez, C., Defrance, N., Lecourt, F., Labat, N., Maher, H., Cordier, Y. (2020). Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors. Semiconductor Science and Technology. DOI
• Letellier, A., Dubois, M.R., Troṽao, J.P.F., Maher, H. (2019). Calculation of printed circuit board power-loop stray inductance in GaN or High di/dt applications. IEEE Transactions on Power Electronics. DOI
• Hassan, B., Cutivet, A., Bouchilaoun, M., Rodriguez, C., Soltani, A., Boone, F., Maher, H. (2019). Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance. Physica Status Solidi A Applications and Materials Science. DOI
• Cutivet, A., Pavlidis, G., Hassan, B., Bouchilaoun, M., Rodriguez, C., Soltani, A., Graham, S., Boone, F., Maher, H. (2019). Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements. IEEE Transactions on Electron Devices. DOI
• Cutivet, A., Bouchilaoun, M., Hassan, B., Rodriguez, C., Soltani, A., Boone, F., Maher, H. (2019). Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution. Physica Status Solidi A Applications and Materials Science. DOI
• Bouchilaoun, M., Soltani, A., Chakroun, A., Jaouad, A., Darnon, M., Boone, F., Maher, H. (2018). A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etching. Physica Status Solidi A Applications and Materials Science. DOI
• Cozette, F., Lesecq, M., Cutivet, A., Defrance, N., Rousseau, M., Maher, H., De Jaeger, J.C. (2018). Resistive Nickel Temperature Sensor Integrated into Short-Gate Length AlGaN/GaN HEMT Dedicated to RF Applications. IEEE Electron Device Letters. DOI
• Chakroun, A., Jaouad, A., Soltani, A., Arenas, O., Aimez, V., Arès, R., Maher, H. (2017). AlGaN/GaN MOS-HEMT device fabricated using a high quality PECVD passivation process. IEEE Electron Device Letters. DOI
• Cutivet, A., Cozette, F., Bouchilaoun, M., Chakroun, A., Arenas, O., Lesecq, M., De Jaeger, J.-C., Jaouad, A., Boone, F., Maher, H. (2017). Characterization of dynamic self-heating in GaN HEMTs using gate resistance measurement. IEEE Electron Device Letters. DOI
• Duffy, S.J., Benbakhti, B., Mattalah, M., Zhang, W., Bouchilaoun, M., Boucherta, M., Kalna, K., Bourzgui, N., Maher, H., Soltani, A. (2017). Low source/drain contact resistance for AlGaN/GaN HEMTs with high Al concentration and Si-HP [111] substrate. Ecs Journal of Solid State Science and Technology. DOI
• Chakroun, A., Jaouad, A., Bouchilaoun, M., Arenas, O., Soltani, A., Maher, H. (2017). Normally-off AlGaN/GaN MOS-HEMT using ultra-thin Al0.45Ga0.55N barrier layer. Physica Status Solidi A Applications and Materials Science. DOI
• Cutivet, A., Bouchilaoun, M., Chakroun, A., Rodriguez, C., Soltani, A., Jaouad, A., Boone, F., Maher, H. (2017). Thermal Impedance Extraction From Electrical Measurements for Double-Ended Gate Transistors. Physica Status Solidi C Current Topics in Solid State Physics. DOI
• Comyn, R., Cordier, Y., Chenot, S., Jaouad, A., Maher, H., Aimez, V. (2016). Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS. Physica Status Solidi A Applications and Materials Science. DOI
• Boucherif, A.R., Rondeau, M., Pelletier, H., Provost, P.-O., Boucherif, A., Dubuc, C., Maher, H., Arès, R. (2016). Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors. Journal of Vacuum Science and Technology B Nanotechnology and Microelectronics. DOI
• Spisser, H., Grimault-Jacquin, A.-S., Zerounian, N., Aassime, A., Cao, L., Boone, F., Maher, H., Cordier, Y., Aniel, F. (2016). Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating. Journal of Infrared Millimeter and Terahertz Waves. DOI
• Arenas, O., Al Alam, E., Aimez, V., Jaouad, A., Maher, H., Arès, R., Boone, F. (2015). Electrothermal mapping of AlGaN/GaN HEMTs using microresistance thermometer detectors. IEEE Electron Device Letters. DOI
• Comyn, R., Cordier, Y., Aimez, V., Maher, H. (2015). Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS. Physica Status Solidi A Applications and Materials Science. DOI
• Zaknoune, M., Okada, E., Mairiaux, E., Roelens, Y., Ducatteau, D., Frijlink, P., Rocchi, M., Maher, H. (2014). 0.2-μ m InP/GaAsSb DHBT power performance with 10 mW/μ m2 and 25% PAE at 94 GHz. IEEE Electron Device Letters. DOI
• Arenas, O., Al Alam, É., Thevenot, A., Cordier, Y., Jaouad, A., Aimez, V., Maher, H., Arés, R., Boone, F. (2014). Integration of micro resistance thermometer detectors in AlGaN/GaN devices. IEEE Journal of the Electron Devices Society. DOI
• Chakroun, A., Maher, H., Alam, E.A., Souifi, A., Aimez, V., Ares, R., Jaouad, A. (2014). Optimized pre-treatment process for MOS-GaN devices passivation. IEEE Electron Device Letters. DOI
• Bouzid-Driad, S., Maher, H., Defrance, N., Hoel, V., De Jaeger, J.-C., Renvoise, M., Frijlink, P. (2013). AlGaN/GaN HEMTs on silicon substrate with 206-GHz FMAX. IEEE Electron Device Letters. DOI
• Bouzid, S., Maher, H., Defrance, N., Hoel, V., Lecourt, F., Renvoise, M., De Jaeger, J.C., Frijlink, P. (2012). 435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing. Electronics Letters. DOI
• Zaknoune, M., Mairiaux, E., Roelens, Y., Waldhoff, N., Rouchy, U., Frijlink, P., Rocchi, M., Maher, H. (2012). 480-GHz f max in InP/GaAsSb/InP DHBT with new base isolation μ-airbridge design. IEEE Electron Device Letters. DOI
• Maher, H., El Makoudi, I., Frijlink, P., Smith, D., Rocchi, M., Bollaert, S., Lepilliet, S., Dambrine, G. (2007). A 200-GHz true e-mode low-noise MHEMT. IEEE Transactions on Electron Devices. DOI
• Medjdoub, M., Courant, J.L., Maher, H., Post, G. (2001). Inductively coupled plasma - Plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs). Materials Science and Engineering B Solid State Materials for Advanced Technology. DOI
• Cavassilas, N., Aniel, F., Boucaud, P., Adde, R., Maher, H., Décobert, J., Scavennec, A. (2000). Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor. Journal of Applied Physics. DOI
• Maher, H., Scavennec, A., Décobert, J., Post, G., Zerounian, N., Cavassilas, N., Aniel, F. (2000). Excess gate leakage at low voltage in InP-based HEMTs. Conference Proceedings International Conference on Indium Phosphide and Related Materials. DOI
• Maher, H., DiSanto, D.W., Soerensen, G., Bolognesi, C.R., Tang, H., Webb, J.B. (2000). Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors. Applied Physics Letters. DOI
• Mäher, H., Décobert, J., Falcou, A., Le Pallec, M., Post, G., Nissim, Y.I., Scavennec, A. (1999). A triple channel HEMT on InP (camel HEMT) for large-signal high-speed applications. IEEE Transactions on Electron Devices. DOI
• Décobert, J., Rondeau, G., Maher, H., Ladner, C., Falcou, A., Biblemont, S., Post, G. (1998). Doping optimizations for InGaAs/InP composite channel HEMTs. Journal of Crystal Growth. DOI

Articles de conférence

• Dahmani, S., Elhadji, A.S., Buttay, C., Allard, B., Maher, H., Soltani, A. (2024). Characterization and modeling protocol for GaN-on-Si power transistors. 2024 IEEE 11th Workshop on Wide Bandgap Power Devices and Applications Wipda 2024. DOI
• Hassan Maher. (2022). GaN based Microelectronic compounds.
• Benjelloun, M., Al Taradeh, N., Rodriguez, C., Gogneau, N., Soltani, A., Morris, D., Harmand, J.-C., Maher, H. (2022). Design and Optimization of New Enhanced Vertical GaN Nanowire Transistor Using Sentaurus TCAD for Power Applications. 2022 Compound Semiconductor Week Csw 2022. DOI
• Fesiienko, O., Petit-Etienne, C., Darnon, M., Soltani, A., Maher, H., Pargon, E. (2022). Development of low-damage plasma etching processes for preserving AlGaN/GaN heterostructure integrity in MIS HEMT. 2022 Compound Semiconductor Week Csw 2022. DOI
• Benjelloun, M., Sodhi, T., Kunti, A., Travers, L., Soltani, A., Morris, D., Maher, H., Gogneau, N., Harmand, J.-C. (2022). Growth of Si-doped GaN Nanowires With Low Density For Power Device Applications. 2022 Compound Semiconductor Week Csw 2022. DOI
• N'dohi, A.J.E., Sonneville, C., Saidi, S., Ngo, T.H., De Mierry, P., Frayssinet, E., Cordier, Y., Phung, L.V., Morancho, F., Isoird, K., Tasselli, J., Maher, H., Planson, D. (2022). Multiphysics Characterizations of Vertical GaN Schottky Diodes. 2022 Compound Semiconductor Week Csw 2022. DOI
• Albany, F., Curutchet, A., Labat, N., Lecourt, F., Walasiak, E., Maher, H., Cordier, Y., Defrance, N., Malbert, N. (2021). An Advanced Ageing Methodology for Robustness Assessment of Normally-off AlGaN/GaN HEMT. Eumic 2020 2020 15th European Microwave Integrated Circuits Conference.
• Fesiienko Oleh, Erwine Pargon, Hassan Maher, Camille Petit-Etienne, Ali Soltani, Maxime Darnon. (2019). Impact of plasma etching process exposure on the integrity of AlN and AlGaN layers integrated in GaN heterojunction transistors (HEMTs).
• Bilal Hassan, Adrien Cutivet, Christophe Rodriguez, Flavien Cozette, Ali Soltani, François Boone, Hassan Maher. (2019). Scalable small signal modeling of AlGaN/GaN HEMT based on distributed gate resistance.
• Mamadou Lamine Beye, Jean-Fraçois Mogniotte, Luong-Viet Phung, Nadir Idir, Hassan Maher, Bruno Allard. (2019). Analysis and Assessment of temperature effect of an Open LoopActive Gate Voltage Control in GaN Transistor During Turn-ON and Turn-OFF.
• Beye, M.L., Mogniotte, J.F., Phung, L.V., Idir, N., Maher, H., Allard, B. (2019). An application of open-loop active gate voltage control for GaN transistors. 2019 21st European Conference on Power Electronics and Applications EPE 2019 Ecce Europe. DOI
• Beye, M.L., Mogniotte, J.F., Phung, L.V., Idir, N., Maher, H., Allard, B. (2019). Analysis and Assessment of temperature effect on an Open Loop Active Gate Voltage Control of GaN Transistor during Turn-ON and Turn-OFF. Proceedings of the International Conference on Power Electronics and Drive Systems. DOI
• Berthelot, B., Tartarin, J.-G., Viallon, C., Leblanc, R., Maher, H., Boone, F. (2019). GaN MMIC Differential Multi-function Chip for Ka-Band Applications. IEEE MTT S International Microwave Symposium Digest. DOI
• Hassan, B., Cutivet, A., Rodriguez, C., Cozette, F., Soltani, A., Maher, H., Boone, F. (2019). Scalable Small-Signal Modeling of AlGaN/GaN HEMT Based on Distributed Gate Resistance. 2019 IEEE Bicmos and Compound Semiconductor Integrated Circuits and Technology Symposium Bcicts 2019. DOI
• Chahdi, H.O., Ougazzaden, A., Salvestrini, J.-P., Maher, H., Soltani, A., Helli, O., Bourzgui, N.-E., Breuil, L., Danovitch, D., Voss, P.L., Sundaram, S., Aubry, V., Halfaya, Y. (2019). Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature. Proceedings of IEEE Sensors. DOI
• Chafi, A., Idir, N., Videt, A., Maher, H. (2019). Using flexible ferrite sheet to design PCB inductor for 1MHz GaN converter taking into account thermal issues. Proceedings of the International Conference on Power Electronics and Drive Systems. DOI
• Bilal Hassan, Adrien Cutivet, Ali Soltani, Christophe Rodriguez, François Boone, Hassan Maher, Meriem Bouchilaoun. (2018). Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance.
• Meriem Bouchilaoun, Ali Soltani, Christophe Rodriguez, Abdelatif Jaouad, Hassan Maher. (2018). Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer.
• Adrien Cutivet, Meriem Bouchilaoun, Bilal Hassan, Christophe Rodriguez, Ali Soltani, François Boone, Hassan Maher. (2018). Scaling of GaN HEMTs Thermal Transient Characteristics.
• Marie-Clara Pépin, Hassan Maher, Christophe Rodriguez, Ali Soltani. (2018). Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism.
• Duffy, S.J., Benbakhti, B., Zhang, W., Kalna, K., Ahmeda, K., Boucherta, M., Bourzgui, N.E., Maher, H., Soltani, A. (2018). A Source and Drain Transient Currents Technique for Trap Characterisation in AIGaN/GaN HEMTs. Eumic 2018 2018 13th European Microwave Integrated Circuits Conference. DOI
• Beye, M.L., Mogniotte, J.F., Phung, L.V., Maher, H., Allard, B. (2018). Active gate driver and management of the current switching speed in GaN transistors during turn-on. Proceedings IECON 2018 44th Annual Conference of the IEEE Industrial Electronics Society. DOI
• Chafi, A., Idir, N., Videt, A., Duquesne, T., Maher, H. (2018). Design and optimization method of pcb-integrated inductors for high-frequency converters. Pcim Europe Conference Proceedings.
• Saugnon, D., Tartarin, J.G., Franc, B., Maher, H., Boone, F. (2018). Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis. Eumic 2018 2018 13th European Microwave Integrated Circuits Conference. DOI
• Cozette, F., Lesecq, M., Defrance, N., Rousseau, M., De Jaeger, J.-C., Cutivet, A., Maher, H. (2018). Temperature monitoring of short-gate length AlGaN/GaN HEMT via an integrated sensor. European Solid State Device Research Conference. DOI
• Adrien Letellier, Maxime Dubois, Joao Trovao, Hassan Maher. (2017). Overvoltage Reduction with Enhanced Snubber Design for GaN-Based Electric Vehicle Drive. DOI
• Adrien Cutivet, Meriem Bouchilaoun, Ahmed Chakroun, Ali Soltani, Abdelatif Jaouad, François Boone, Hassan Maher. (2017). Characterization and modeling of transient self-heating in GaN HEMTs.
• Ridaoui, M., Fadgie-Djomkam, A.-B., Pastorek, M., Wichmann, N., Jaouad, A., Maher, H., Bollaert, S. (2016). High-performance self-aligned InAs MOSFETs with L-shaped Ni-epilayer alloyed source/drain contact for future low-power RF applications. Eumic 2016 11th European Microwave Integrated Circuits Conference. DOI
• Mohamed Ridaoui, Alain-Bruno Fadgie-Djomkam, Matej Pastorek, Nicolas Wichmann, Abdelatif Jaouad, Hassan Maher, S. Bollaert. (2016). High-performance self-aligned InAs MOSFETs with L-shaped Ni-epilayer alloyed source/drain contact for future low-power RF applications.
• Ahmed Chakroun, Abdelatif Jaouad, Meriem Bouchilaoun, Osvaldo Arenas, Ali Soltani, Hassan Maher. (2016). Normally-Off AlGaN/GaN MOS-HEMTs Using Ultra-Thin Al0.45GaN0.55N Barrier and PECVDSiOx as Gate Insulator.
• Ridaoui, M., Pastorek, M., Fadjie, A.B.D., Wichmann, N., Jaouad, A., Maher, H., Bollaert, S. (2016). Ultra-thin body InAs-MOSFETs with elevated source/drain contacts. 2016 Compound Semiconductor Week Csw 2016 Includes 28th International Conference on Indium Phosphide and Related Materials Iprm and 43rd International Symposium on Compound Semiconductors Iscs 2016. DOI
• Spisser, H., Grimault-Jacquin, A.-S., Zerounian, N., Aassime, A., Cao, L., Boone, F., Maher, H., Cordier, Y., Aniel, F. (2015). AlGaN/GaN THz resonant plasmonic detectors with symmetric and asymmetric patterns deposited above homogeneous and inhomogeneous 2DEG. 2015 Global Symposium on Millimeter Waves Gsmm 2015. DOI
• Letellier, A., Dubois, M.R., Trovao, J.P., Maher, H. (2015). Gallium Nitride Semiconductors in Power Electronics for Electric Vehicles: Advantages and Challenges. 2015 IEEE Vehicle Power and Propulsion Conference Vppc 2015 Proceedings. DOI
• Soltani, A., Talbi, A., Gerbedoen, J.-C., Bourzgui, N., Bassam, A., Mortet, V., Maher, H., Benmoussa, A. (2015). High performance AlN-based surface acoustic wave sensors on TiN on (100) Silicon substrate. 2015 Global Symposium on Millimeter Waves Gsmm 2015. DOI
• Cutivet, A., Altuntas, P., Defrance, N., Okada, E., Avramovic, V., Lesecq, M., Hoel, V., De Jaeger, J.-C., Boone, F., Maher, H. (2015). Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors. European Microwave Week 2015. DOI
• Arenas, O., Alam, E.A., Chakroun, A., Aimez, V., Jaouad, A., Ares, R., Boone, F., Maher, H. (2015). Thermal performance assessment in AlGaN/GaN structures by microsensor integration. European Microwave Week 2015. DOI
• Agboton, A., Defrance, N., Altuntas, P., Avramovic, V., Cutivet, A., Ouhachi, R., De Jaeger, J.C., Bouzid-Driad, S., Maher, H., Renvoise, M., Frijlink, P. (2013). Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate. European Solid State Device Research Conference. DOI
• Malmqvist, R., Samuelsson, C., Gustafsson, A., Maher, H., Vaha-Heikkila, T., Baggen, R. (2012). A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC. IEEE MTT S International Microwave Symposium Digest. DOI
• Kone, G.A., Maneux, C., Labat, N., Zimmer, T., Grandchamp, B., Frijlink, P., Maher, H. (2012). Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests. Conference Proceedings International Conference on Indium Phosphide and Related Materials. DOI
• Alexander, N., Frijlink, P., Hendricks, J., Limiti, E., Löffler, S., MacDonald, C., Maher, H., Pettersson, L., Platt, D., Rice, P., Riester, M., Schulze, D., Vassilev, V. (2012). IMAGINE project - A low cost, high performance, monolithic passive mm-wave imager front-end. Proceedings of SPIE the International Society for Optical Engineering. DOI
• Baggen, L., Simon, W., Malmqvist, R., Vähä-Heikkilä, T., Maher, H., Seok, S. (2012). MEMS-4-MMIC: The next step in combined GaAs MEMS-MMIC technology. 2012 15th International Symposium on Antenna Technology and Applied Electromagnetics Antem 2012. DOI
• Bouzid-Driad, S., Maher, H., Renvoise, M., Frijlink, P., Rocchi, M., Defrance, N., Hoel, V., De Jaeger, J.C. (2012). Optimization of AlGaN/GaN HEMT Schottky contact for microwave applications. European Microwave Week 2012 Space for Microwaves Eumw 2012 Conference Proceedings 7th European Microwave Integrated Circuits Conference Eumic 2012.
• Seok, S., Kim, J., Fryziel, M., Rolland, N., Rolland, P.-A., Maher, H., Simon, W., Baggen, R. (2012). Wafer-level BCB CAP packaging of integrated MEMS switches with MMIC. IEEE MTT S International Microwave Symposium Digest. DOI
• Maher, H., Delmouly, V., Rouchy, U., Renvoise, M., Frijlink, P., Smith, D., Zaknoune, M., Ducatteau, D., Avramovic, V., Scavennec, A., Godin, J., Riet, M., Maneux, C., Ardouin, B. (2011). A 300 GHz InP/GaAsSb/InP HBT for high data rate applications. Conference Proceedings International Conference on Indium Phosphide and Related Materials.
• Scavennec, A., Maher, H., Decobert, J. (2011). Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTs. Conference Proceedings International Conference on Indium Phosphide and Related Materials.
• Koné, G.A., Ghosh, S., Grandchamp, B., Maneux, C., Marc, F., Labat, N., Zimmer, T., Maher, H., Bourqui, M.L., Smith, D. (2011). Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT. Conference Proceedings International Conference on Indium Phosphide and Related Materials.
• Bouzid, S., Hoel, V., Defrance, N., Maher, H., Lecourt, F., Renvoise, M., Smith, D., De Jaeger, J.C. (2010). AlGaN/GaN HEMT on Si (111) substrate for millimeter microwave power applications. Conference Proceedings the 8th International Conference on Advanced Semiconductor Devices and Microsystems Asdam 2010. DOI
• Olivier, A., Wichmann, N., Mo, J.J., Noudeviwa, A., Roelens, Y., Desplanque, L., Wallart, X., Danneville, F., Dambrine, G., Bollaert, S., Saint-Martin, J., Shi, M., Martin, F., Desplats, O., Wang, Y., Chauvat, M.P., Ruterana, P., Maher, H. (2010). Fabrication and characterization of 200-NM self-aligned IN 0.53GA0.47AS MOSFET. Conference Proceedings International Conference on Indium Phosphide and Related Materials. DOI
• Lecourt, F., Douvry, Y., Defrance, N., Hoel, V., De Jaeger, J.C., Bouzid, S., Renvoise, M., Smith, D., Maher, H. (2010). High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate. 2010 Proceedings of the European Solid State Device Research Conference Essderc 2010. DOI
• Shi, M., Saint-Martin, J., Bournel, A., Maher, H., Renvoise, M., DolIfus, P. (2010). Monte carlo simulation of III-V material-based MOSFET for high frequency and ultra-low consumption applications. Journal of Nanoscience and Nanotechnology. DOI
• Noudéviwa, A., Roelens, Y., Danneville, F., Olivier, A., Wichmann, N., Waldhoff, N., Lepilliet, S., Dambrine, G., Desplanque, L., Wallart, X., Bellaiche, J., Smith, D., Maher, H., Bollaert, S. (2010). Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation. European Microwave Week 2010 Connecting the World Eumic 2010 Conference Proceedings.
• Maher, H., Baudet, P., El Makoudi, I., Périchaud, M.-G., Bellaiche, J., Renvoisé, M., Rouchy, U., Frijlink, P. (2006). A true E-mode MHEMT with high static and dynamic performances. Conference Proceedings International Conference on Indium Phosphide and Related Materials.
• Bellaïche, J., Baudet, P., Demichel, S., Renvoisé, M., Maher, H., Pautrat, J.F., Périchaud, Mg., Lafont, S. (2006). Release for production of a 150GHz, 125nm gate 40% In Metamorphic GaAs HEMT MMIC process. 2006 International Conference on Compound Semiconductor Manufacturing Technology.
• Maher, H., Bolognesi, C.R., Piner, E.L. (2001). Temperature characterization of NDR in AlGaN/GaN HFETs. European Solid State Device Research Conference. DOI
• Maher, H., DiSanto, D., Soerensen, G., Dvorak, M.W., MacElwee, T.W., Webb, J.B., Bolognesi, C.R. (2000). Wet etching and its application to the fabrication and characterization of AlGaN/GaN HFETs. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
• Maher, H., Decobert, J., Falcou, A., Post, G., Scavennec, A. (1999). 3-Channel InP-HEMT with low output conductance. Conference Proceedings International Conference on Indium Phosphide and Related Materials.
• Etrillard, J., Mäher, H., Medjdoub, M., Courant, J.L., Nissim, Y.I. (1999). Low energy, high density plasma (ICP) for low defect etching and deposition applications on compound semiconductors. Materials Research Society Symposium Proceedings. DOI
• Medjdoub, M., Maher, H., Ladner, C., Courant, J.L., Post, G. (1999). Silicon nitride passivation of double channel InP HEMTs using inductively coupled plasma - enhanced chemical vapor deposition. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO.
• Maher, H., Etrillard, J., Decobert, J., Nissim, Y.I. (1998). Dry etch recess of an InGaAs/InAlAs/InP HEMT like structure using a low energy high density SiCl4 plasma (ICP). Conference Proceedings International Conference on Indium Phosphide and Related Materials.
• Decobert, J., Regreny, P., Maher, H., le Pallec, M., Falcou, A., Juhel, M., Post, G. (1997). Highly resistive FET buffer layers on InP grown by LP-MOVPE. Conference Proceedings International Conference on Indium Phosphide and Related Materials.
• Le Pallec, M., Post, G., Decobert, J., Maher, H., Falcou, A. (1997). InAlAs/InGaAs/InP field effect transistor with carbon-doped InAlAs buffer layers. Conference Proceedings International Conference on Indium Phosphide and Related Materials.

Autres contributions

Cours enseignés ou supervisés à l'UdeS

• SCA781 - Études spécialisées au doctorat. (2025-2026). (3CR).
• GEI718 - Techniques de fabrication en salles blanches. (2024). (2CR).
• GEN135 - Circuits électriques I. (2023-2024). (1CR).
• GEI803 - Projet de développement en génie électrique I. (2023). (3CR).
• GEN136 - Circuits électriques II. (2023). (1CR).