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Abderraouf Boucherif

Professeur, Faculté de génie

FAC. GÉNIE Mécanique

Présentation

Sujet de recherche

Energy Storage, Micro and Nanoelectronics, Nanomaterials

Disciplines de recherche

Material Engineering and Metallurgic Engineering, Mechanical Engineering, Physical Engineering

Mots-clés

Heterogeneous integration, Group IV semiconductors, Lattice engineering, Porous semiconductors, Silicon anodes for Lithium-ion Batteries, Epitaxy, III-V Materials, Green photonics, Photovoltaics, Graphene, Nanocomposites, Energy storage, IoT, Monocrystalline nanomembranes, Substrate re-use

Intérêts de recherche

My research interests include the synthesis and characterization of semiconductor nanomaterials and thin films for optoelectronics, energy, quantum and IoT applications. More specifically, I work on the synthesis of nanoporous silicon and germanium by self-organized electrochemical porosification to create novel nanoscale morphologies, study their properties for applications such as: i) Hetero-integration of discimilar semiconductors ii) for layer transfer process to create light and flexible photonic and photovoltaic devices, iii) Anodes for high-energy, high-power Li-ion batteries. I also work on the growth and characterization of semiconductors films, nanostructures and 2D materials (Graphene) by epitaxy (CVD, MBE, CBE). More recently, I developped nanocomposites materials that combine 2D materials such as graphene with porous semiconductor and study their properties for future applications in photovoltaics and Li-ion batteries.

Langues parlées et écrites

Anglais, Français

Diplômes

(2014). (Post-doctorate, PDF fellow). Université de Sherbrooke.

(2010). Pseudosubstrats accordables en paramètre de maille à base de silicium poreux pour l’hétéroépitaxie de matériaux IV-IV et III-V. (Doctorate, Ph.D. Material Science). Institut National des Sciences Appliquées de Lyon.

(2007). (Master's Thesis, MSc). Universite Jean Monnet.

(2005). (Bachelor's, Bachelor's degree). Universite Jean Monnet.

Expérience académique

Associate chair. (2022-). Université de Sherbrooke. Canada.

Assistant Professor. (2018-). Université de Sherbrooke. Canada.

Adjunct Professor and Senior Research Scientist. (2017-2018). Université de Sherbrooke. Canada.

Invited scientist. (2018-2018).

Research Scientist. (2014-2017). Université de Sherbrooke. Canada.

Research Associate. (2012-2014). Université de Sherbrooke. Canada.

Research/Postdoctoral Fellow. (2010-2012). Université de Sherbrooke. Canada.

Research Assistant (Ph.D.). (2007-2010). Institut National des Sciences Appliquées de Lyon. France.

Research Assistant (MSc.). (2006-2007). National Research Council Canada. Canada.

Prix et distinctions

  • (2020) Research work featured in Compound semiconductor Magazine. compound semiconductors. (Citation).
  • (2020) Tremplin Prize. Université de Sherbrooke. (Prize / Award).
  • (2019) Best poster award. Canadian Semiconductor Science and Technology Conference. (Prize / Award).
  • (2018) Guest scientist. Université d'Orleans. (Distinction).
  • (2018) Popular science prize. Université de Sherbrooke. (Prize / Award).
  • (2017) Best presentation award. Canadian Semiconductor Science and Technology Conference. (Prize / Award).
  • (2017) Initiative-Innovation. Université de Sherbrooke. (Distinction).
  • (2015) Public Choice Poster Award. Next Generation Solar Photovoltaics Canada. (Prize / Award).
  • (2009) Best Young Scientist Award. European Material Research Society. (Prize / Award).
  • (2008) First Runner-up Poster Award. Porous Semiconductors Science and Technology. (Prize / Award).
  • Best poster Award. 49th IEEE Photovoltaic Specialists Conference (PVSC 49). (Prize / Award).
  • Best presentation Award. EMRS: Innovative and advanced epitaxy symposium. (Prize / Award).
  • Relève étoile Louis-Berlinguet. Université de Sherbrooke. (Prize / Award).

Financement

  • Research Chair. (Under Review). Principal Applicant. Flexible nanomembranes and substrate re-use. Umicore. 1 500 000 $. (2022-2027)
  • Grant. (Awarded). Principal Applicant. Advanced Substrate for Gallium nitride Epitaxy Industrialization. Agence Nationale pour la Recherche (ANR) (France). 495 824 $. (2022-2025)
  • Grant. (Under Review). Principal Applicant. Thermophotovoltaïque en champ proche pour le recyclage de la chaleur en électricité à l'aide des membranes detachables de GeSn. Nova program, FRQNT-NSERC. 210 000 $. (2022-2025)
  • Grant. (Awarded). Principal Applicant. MITACS acceleration. Mathematics of Information Technology and Complex Systems (MITACS). 240 000 $. (2021-2023)
  • Contract. (Awarded). Principal Applicant. Manufacture of porosification cell prototype and Germanium substrate detachable for space solar panels. Umicore. 89 990 $. (2022-2023)
  • Contract. (Awarded). Principal Applicant. Testing electrochemical performance of Li-ion batteries based on micrometric silicon particles. Ferroglobe and Silicium Quebec. 141 000 $. (2022-2023)
  • Grant. (Awarded). Principal Applicant. CMC microsystem. III-V solar cells on engineered susbstrate. 6 000 $. (2021-2022)

Publications

Articles de revue

  • Heintz, A; Ilahi, B; Pofelski, Botton, G; Patriarche, G; Barzaghi, A; Fafard, S; Arès, R; Isella, G; Boucherif, A. (2022). Defect free strain relaxation of microcrystals on mesoporous patterned silicon. Nature Communications (Submitted).
  • Diallo, TM; Aziziyan, MR; Arvinte, R; Harmand, JC; Patriarche, G; Renard, C; Fafard, S; Arès, R; Boucherif, A. (2022). In-Situ Transmission Electron Microscopy Observation of Germanium Growth onFreestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van derWaals Epitaxy. Small 18 (5), 2101890. (Published).
  • Dupuy, A; Aziziyan, MR; Machon, D; Arès, R; Boucherif, A. (2021). Anisotropic mesoporous germanium nanostructures by fast bipolar electrochemical etching. Electrochimica Acta 378 137935. (Published).
  • Juneau-Fecteau, A; Savin, R; Boucherif, A; Fréchette, LG. (2021). A practical Tamm plasmon sensor based on porous Si. AIP Advances 11 (6), 065305. (Published).
  • Diallo, TM; Aziziyan, MR; Arvinte, R; Ares, R; Fafard, S; Boucherif, A. (2021). CVD growth of high-quality graphene over Ge (100) by annihilation of thermal pits. Carbon 174 214-226. (Published).
  • Mbeunmi, AP; Turala, A; Arvinte, R; Validiva, CE; Hinzer, K; Aimez, V; Arès, R; Boucherif, A; Fafard, S. (2021). Development of dual junction GaInP/GaAs solar cells for high-performance concentrator photovoltaic quad-junction III-V/IV. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices X 11681 28-34. (Published).
  • Dupuy, A; Roland, A; Aziziyan, MR; Sauze, S; Machon, D; Arès, R; Boucherif, A. (2021). Monolithic integration of mesoporous germanium: A step toward high-performance on-chip anode. Materials Today Communications 26 101820. (Published).
  • Machon, D; Sauze, S; Arès, R; Boucherif, A. (2021). Probing the coupling between the components in a graphene–mesoporous germanium nanocomposite using high-pressure Raman spectroscopy. Nanoscale Advances 3 (9), 2577-2584. (Published).
  • Bioud, YA; Paradis, E; Boucherif, A; Drouin, D; Arès, R. (2021). Shape control of cathodized germanium oxide nanoparticles. Electrochemistry Communications 122 106906. (Published).
  • Bioud, YA; Boucherif, A; Patriarche, G; Drouin, D; Arès, R. (2020). Capturing the Effects of Free Surfaces on Threading Dislocation Density Reduction. ECS Transactions 98 (5), 527. (Published).
  • El‐Gahouchi, M; Aziziyan, MR; Arès, R; Fafard, S; Boucherif, A. (2020). Cost‐effective energy harvesting at ultra‐high concentration with duplicated concentrated photovoltaic solar cells. Energy Science & Engineering 8 (8), 2760–2770. (Published).
  • Mbeunmi, AP; El-Gahouchi, M; Arvinte, Jaouad, A; Cheriton, R; Wilkins, M; Valdivia, CE; Hinzer, K; Fafard, S; Aimez, V; Arès, R. (2020). Direct growth of GaAssolar cells on Si substrate via mesoporous Si buffer. Solar Energy Materials and Solar Cells 217 110641. (Published).
  • Bioud; Y, Rondeau; M, Boucherif, A; Patriarche, G; Drouin, D; Arès, R. (2020). Effect of sintering germanium epilayers on dislocation dynamics: From theory to experimental observation. Acta Materialia 200 (608-618), (Published).
  • Mbeunmi, ABP; Arvinte, R; Pelletier, H; Jellite M; Arès, R; Fafard, S; Boucherif, A. (2020). Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor. Journal of Crystal Growth 547 125807. (Published).
  • Sauze, S; Aziziyan, MR; Brault, P; Kolhatkar, G; Ruediger, A; Korinek, A; Machon, D; Arès, R; Boucherif, A. (2020). Integration of 3D nanographene into mesoporousgermanium. Nanoscale 12 (47), 23984-23994. (Published).
  • Fandio, DJJ; Sauze, S; Boucherif, A; Ares, R; Morris, D. (2020). Structural, optical and terahertz properties of graphene-mesoporous silicon nanocomposites. Nanoscale Advances 2 (1), 340-346. (Published).
  • Jellite, M; Darnon, M; Arvinte, R; Aziziyan, MR; Machon, D; Boucherif, A; Arès, R. (2020). Surface preparation of porous Si – graphene nanocomposites for heteroepitaxy. Journal of Vacuum Science & Technology B 38 (5), 053202. (Published).
  • Fandio, DJJ; Sauze, S; Boucherif, A; Arès, R; Ilahi, B; Morris, D. (2020). Terahertz photoconductivity and photocarrier dynamics in graphene–mesoporous silicon nanocomposites. Physical Review B 102 115407. (Published).
  • Bioud, YA; Beattie, MN; Boucherif, A; Jellit, M; Stricher, R; Ecoffey, S; Patriarche, G; Troadec , D; Soltani, A; Braidy, N; Wilkins, M. (2019). A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII 10913 76-83. (Published).
  • Dupuy, A; Sauze, S; Jellite, M; Arvinte, R; Arès, R; Boucherif, A. (2019). Graphene-porous semiconductor nanocomposites scalable synthesis for energy applications. Journal of Physics: Conference Series 1407 (1), 012069. (Published).
  • Diallo, TM; Poungoué Mbeunmi, AB; El-Gahouchi, Jellite, M; Arvinte, R; Aziziyan, MR; Arès, R; Fafard, S; Boucherif, A. (2019). Hybrid Epitaxy Technique for the Growth of High Quality AlInAs and InGaAs Layers on InP Substrates. Journal of Vacuum Science & Technology B 37 (3), 031208. (Published).
  • Bioud,YA; Rondeau, M; Boucherif, A; at al. (2019). Sintering of Nanoporous Germanium for Defect Reduction in Ge on Si Epitaxial Layers. APL Materials (Submitted).
  • uneau-Fecteau, A; Savin, R; Boucherif, A; Fréchette, LG. (2019). Tamm Phonon-Polaritons: Localized states from phonon-light interactions. Applied Physics Letters 114 (14), 141101. (Published).
  • Bioud, YA; Boucherif, A; Myronov, M; et al. (2019). Uprooting defects to enable light-emitting III-V on Si. Nature Communications 10 (1), 1-12. (Published).
  • York, MC; Mailhot, A; Boucherif, A; Arès, R; Aimez, V; Fafard, S. (2018). Challenges and strategies for implementing the vertical epitaxial heterostructure architechture (VEHSA) design for concentrated photovoltaic applications. Solar Energy Materials and Solar Cells 181 46-52. (Published).
  • Kolhatkar, G; Boucherif, A; Boucherif, AR; Dupuy, A; Fréchette, LG; Arès, R; Ruediger, A. (2018). Extreme temperature stability of thermally insulating graphene-mesoporous-silicon nanocomposite. Nanotechnology 29 (14), 145701. (Published).
  • Boucherif, A; Radescu, S; Arès, R; Mujica, A; Mélinon, P; Machon, D. (2018). Metastable States in Pressurized Bulk and Mesoporous Germanium. The Journal of Physical Chemistry C 122 (20), 10929-10938. (Published).
  • eattie, MN; Bioud, YA; Hobson, DG; Boucherif, A; Valdivia, CE; Drouin, D; Arès, R; Hinzer, K. (2018). Tunable conductivity in mesoporous germanium. Nanotechnology 29 (21), 215701. (Published).
  • Wilkins, MM; Gupta, J; Jaouad, A; Bouzazi, B; Fafard, S; Boucherif, A; Valdivia, CE; Arès, R; Aimez, V; Schriemer, HP; Hinzer, K. (2017). Design of thin InGaAsN (Sb) nip junctions for use in four-junction concentrating photovoltaic devices. Journal of Photonics for Energy 7 (2), 022502-022502. (Published).
  • Bioud, YA; Boucherif, A; Belarouci, A; Paradis, E; Fafard, S; Aimez, V; Drouin, D; Arès, R. (2017). Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching. Electrochimica Acta 232 422-430. (Published).
  • Boucherif, AR; Boucherif, A; Kolhatkar, G; Ruediger, A; Arès, R. (2017). Graphene–Mesoporous Si Nanocomposite as a Compliant Substrate for Heteroepitaxy. Small 13 (18), 1603269. (Published).
  • Bioud Y*, Boucherif A, Belarouci A, Paradis E, Drouin D, Arès R. (2016). Chemical composition of nanoporous layer formed by Electrochemical Etching of p-Type GaAs. Nanoscale Research Letters 11 (1), 446. (Published).
  • Kolhatkar, G; Boucherif, A; Dab, C; et al. (2016). Composition Variation in Al-Based Dilute Nitride alloys Using Apertureless Scanning Near-Field Microscopy. RCS Physical Chemistry Chemical Physics 18 (44), 30546-30553. (Published).
  • Cheriton, R; Wilkins, MM; Sharma, P; Boucherif, A; et al. (2016). Design optimizations of InGaAsN (Sb) subcells forconcentrator photovoltaic systems. Journal of Vacuum Science & Technology B 34 (2), 02M103. (Published).
  • Kolhatkar, G; Boucherif, A; Bioud, Y; et al. (2016). Electrical and structural properties of AlGaNAs alloys grown by chemicalbeam epitaxy. Physica Status Solidi (b) 253 (5), 918–922. (Published).
  • Boucherif, AR; Rondeau, M; Pelletier, H; et al. (2016). Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors. Journal of Vacuum Science & Technology B 34 (2), 02L116. (Published).
  • Paquette, B; Boucherif, A; Aimez, V; et al. (2016). Novel multijunction solar cell design for low cost, high concentration systems. Progress in Photovoltaics: Research & Applications 24 (2), 150-158. (Published).
  • Gitanjali Kolhatkar, Abderraouf Boucherif, Christopher E. Valdivia, Steven G. Wallace, Simon Fafard, Vincent Aimez, and Richard Arès. (2014). Growth optimization and optical properties of AlGaNAs alloys. Journal of Applied Physics 115 (16), 163513. (Published).
  • Abderraouf Boucherif, Andreas Korinek, Vincent Aimez, and Richard Arès. (2014). Near-Infrared emission from Mesoporous Crystalline Germanium. AIP Advances 4 (10), 107128. (Published).
  • Gitanjali Kolhatkar, Abderraouf Boucherif, Christopher E.Valdivia, Steven G.Wallace, Simon Fafard, Vincent Aimez, Richard Arès. (2013). Al-enhanced N incorporation in GaNAs alloys grown by Chemical Beam Epitaxy. Journal of Crystal Growth 380 256-260. (Published).
  • Frédéric Blaffart, Abderraouf Boucherif, Vincent Aimez, Richard Arès. (2013). Control of mesoporous silicon initiation by cathodic passivation. Electrochemistry communications 36 84-87. (Published).
  • S. Tutashkonko, A. Boucherif, T. Nychyporuk, A. Kaminski-Cachopo, R. Arès, M. Lemiti, V. Aimezb. (2013). Mesoporous Germanium formed by bipolar electrochemical etching. Electrochimica Acta 88 256-262. (Published).
  • Abderraouf Boucherif, Guillaume Beaudin, Vincent Aimez, and Richard Arès. (2013). Mesoporous germanium morphology transformation for lift-off process and substrate re-use. Applied Physics Letter 102 (1), 011915. (Published).
  • Matthew M. Wilkins, Abderraouf Boucherif, Richard Beal, Joan E. Haysom, Jeffrey F. Wheeldon, Vincent Aimez, Richard Arès,Trevor J. Hall, Karin Hinzer. (2013). Multijunction Solar Cells using Silicon Bottom Subcell and Porous Silicon Compliant Membrane. IEEE Photovoltaics 3 (3), 1125 - 1131. (Published).
  • Bernard Paquette, Marie DeVita, Artur Turala, Gitanjali Kolhatkar, Abderraouf Boucherif, Abdelatif Jaouad, Vincent Aimez, Richard Arès. (2013). Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions. Journal of Crystal Growth 374 1-4. (Published).
  • N. P. Blanchard, A. Boucherif, Ph. Regreny, A. Danescu, H. Magoariec, J. Penuelas, V. Lysenko, J.-M. Bluet, O. Marty, G. Guillot, and G. Grenet. (2011). Engineering Pseudosubstrates with Porous Silicon Technology. Semiconductor-On-Insulator Materials for Nanoelectronics Applications 47-65. (Published).
  • A. Boucherif, N. P. Blanchard, O. Marty, P. Regreny, G. Guillot, G. Grenet, and V. Lysenko. (2010). Straining of SiGe ultra-thin films with meso-porous Si substrates. Applied Physics Letter 97 (13), 131910. (Published).
  • A. Boucherif, N.P. Blanchard, P. Regreny, O. Marty, G. Guillot, G. Grenet, V. Lysenkoa. (2010). Tensile strain engineering of Si thin films using porous Si substrates. Thin Solid Films 518 (9), 2466–2469. (Published).
  • Lysenko V, Ostapenko D, Bluet J.M, Regregny P, Mermoux M, Boucherif A, Marty M, Grenet G, Skryshevsky V, Guillot G. (2009). Straining of crystalline silicon thin films by stress generating bulk porous silicon substrates. Physica Status Solidi (A) 206 1255-1258. (Published).
  • Vladimir Lysenko, Dmytro Ostapenko, Jean-Marie Bluet, Philippe Regregny, Michel Mermoux, Abderraouf Boucherif, Olivier Marty, Genevieve Grenet, Valery Skryshevsky, Gerard Guillot. (2009). Straining of thin Si films by partially oxidized meso-porous Si substrates. Physica status solidi 206 (6), 1255-1258. (Published).
  • Boucherif A, Ban D, Luo H, Dupont E, Liu H.C, Wasilewski R.Z, Paltiel Y. (2008). InAsSb basedmid-infrared optical upconversion devices. IEE Electron Letters 44 312-313. (Published).
  • Saeed Fathololoumi, Dayan Ban, Hui Luo, Emmanuel Dupont, Sylvain R. Laframboise, Abderaouf Boucherif, H. C. Liu. (2008). Thermal behavior investigation of terahertz quantum cascade lasers. IEEE Journal of Quantum Electronics 44 (12), 1139-1144. (Published).

Chapitres de livre

  • N.P. Blanchard, A. Boucherif, P. Regreny, A. Danescu, H. Magoariec, O. Marty, J. Penuelas, G. Guillot, V. Lysenko and G. Grenet. (2011). Engineering pseudosubstrates with porous silicon technology. Semiconductor-On-Insulator Materials for NanoElectronics Applications (Springer, 45-65). Springer. (Published).

Articles de journaux

  • S. Tutashkonko, A. Boucherif, T. Nychyporuk, A. Kaminski-Cachopo, R. Arès, M. Lemiti, V. Aimez. (2013). Mesoporous Germanium formed by bipolar electrochemical etching. Electrochimica Acta. 256.
  • M. Wilkins, A. Boucherif, R. Beal, J. E. Haysom, J. F. Wheeldon, V. Aimez, R. Arès,T. J. Hall, K. Hinzer. (2013). Multijunction Solar Cells using Silicon Bottom Subcell and Porous Silicon Compliant Membrane. IEEE Photovoltaics.
  • B. Paquette, M. DeVita, A. Turala, G. Kolhatkar, A. Boucherif, A. Jaouad, V. Aimez,and R. Arès. (2013). Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions. Journal of Crystal Growth.
  • A. Boucherif, G. Beaudin, V. Aimez, and R. Arès. (2012). Mesoporous germanium morphology transformation for lift-off process and substrate re-use. Appl. Phys. Lett. 01191.
  • A. Boucherif, N.P. Blanchard, P. Regreny, O. Marty, G. Guillot, G. Grenet, and V. Lysenko. (2010). Straining of SiGe ultra-thin films with meso-porous Si substrates. Appl. Phys. Lett. 97.
  • A. Boucherif, N.P. Blanchard, P. Regreny, O. Marty, G. Guillot, G. Grenet, and V. Lysenko. (2010). Tensile strain engineering of Si thin films using porous Si substrates. Thin Solid Films. 2466.
  • V. Lysenko, D. Ostapenko, J. M. Bluet, P. Regregny, M. Mermoux, A. Boucherif, O. Marty, G. Grenet, V. Skryshevsky, and G. Guillot. (2009). Straining of crystalline silicon thin films by stress generating bulk porous silicon substrates. Phys. Stat Sol. 1255.
  • A. Boucherif, D. Ban, H. Luo, E. Dupont, H. C. Liu, Z. R. Wasilewski, Y. Paltiel. (2008). InAsSb based mid-infrared optical upconversion devices. IEE Electron Letters. 312.
  • S. Fathololoumi, D. Ban, H. Luo, E. Dupont, S. R. Laframboise, A. Boucherif, H. C. Liu. (2008). Thermal behavior investigation of terahertz quantum cascade lasers. IEEE Journal of Quantum Electronics. 1139.

Articles de conférence

  • Poungoué Mbeunmi, AB; Turala, A; Arvinte, R; Validiva, CE; Hinzer, K; Aimez, V; Arès, R; Boucherif, A; Fafard S. (2021). Developmentof dual junction GaInP/GaAs solar cells for high-performance concentratorphotovoltaic quad-junction III-V/IV. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices X, 11681. (Published).
  • Hamza, MH; Bioud, YA; Boucherif, A; Arès, R; Hatem, TM. (2021). Effect of voided germanium thin-films grown onto silicon substrate on dislocations evolution. IEEE, 0602-0604. (Published).
  • Bioud, YA; Boucherif, A; Patriarche, G; Drouin, D; Arès, R. (2020). Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon. AIP Publishing, 020002. (Published).
  • Arvinte, R; Cailleaux, .; Mbeunmi, ABP; Heintz, A; Arès, R; Boucherif, A. (2020). Epitaxial lift-off process for III-V solar cells by using porous germanium for substrate re-use. IEEE, 1976-1981. (Published).
  • Mbeunmi, ABP; Turala, A; Arvinte, R; Jaouad, A; Aimez, V; Arès, R; Boucherif, A; Fafard, S. (2020). High performance dual junction GaInP/GaAs for concentrator photovoltaic quad-junction. IEEE, (Published).
  • El-Gahouchi, M; Aziziyan, MR; Arès, R; Boucherif, A. (2020). Optimized duplicated-junction solar cells: An innovative approach for energy harvestingat ultra-high concentrations. AIP Publishing, 020003. (Published).
  • Boucherif A*. (2020). Towards cost effective III-V photovoltaics with advanced substrate engineering. Photonics West, (Published).
  • Beattie, MN; Bioud, YA; Boucherif, A; Drouin, D; Arés, R; Valdivia, CE; Hinzer, K. (2018). III-V Multi-Junction Solar Cells on Si Substrates with a Voided Ge Interface Layer: A Modeling Study. IEEE, (Published).
  • Colin, C.; Jaouad, A.; Darnon, M.; De Lafontaine, M; Volatier, M; Boucherif, A; Arès, R; Fafard, S; Aimez, V. (2017). The handling of thin substrates and its potential for new architectures in multi-junction solar cells technology. AIP Publishing, 040001. (Published).
  • Boucherif, Abderrahim Rahim and Rondeau, Maxime and Pelletier, Hubert and Provost, Philippe-Olivier and Boucherif, Abderraouf and Dubuc, Christian and Maher, Hassan and Ar{\`e}s, Richard. (2016). Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors. Journal of Vacuum Science \& Technology B, 02L116. (Published).
  • Cheriton, Ross Wilkins, Matthew M. Sharma, Pratibha Valdivia, Christopher E. Trojnar, Anna H. Schriemer, Henry Hinzer, Karin Gupta, James Bouzazi, Boussairi Kolhatkar, Gitanjali Boucherif, Abderraouf Jaouad, Abdelatif Fafard, Simon Aimez, Vincent Arès, Richard. (2015). Design optimizations of InGaAsN(Sb) subcells for concentrator photovoltaic systems. Journal of Vacuum Science & Technology B, (Published).
  • Paquette B, DeVita M, Turala, A and Kolhatkar G, Boucherif, A, Jaouad A, Wilkins M, Wheeldon JF, Walker AW, Hinzer K et. al. (2013). Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells. AIP conference proceedings, 48--52. (Published).

Propriétés intellectuelles

Patents

  • Aziziyan MR, Arvinte R, Arès R, Boucherif A. Methods For Fabrication Of Detachable III-V Solar Cells On Electrochemically Engineered GE Substrates. 63/148,229. United States. (Pending).
  • Aziziyan MR, Boucherif A. Silicon Anode For Lithium Ion Batteries. 63/124,907. United States. (Pending).
  • Bioud YA, Boucherif A, Arès R. Substrates for optoelectronic devices and methods of manufacturing same. WO2022036454. United States. (Pending).
  • Provost PO, Boucherif A. WAFER RECEIVER, ELECTROCHEMICAL POROSIFICATION APPARATUS AND METHOD USING SAME. US 63/248,594. United States. (Pending).

Autres contributions

Cours enseignés

  • Epitaxy / Genèse et caractérisation des couches minces. GMC 761. (2CR).
  • Microsturcture et Choix des matériaux.
  • Nano-characterization of semiconductors/ Nano-caractérisation des semi-conducteurs. GMC 760.
  • Physics Lab for engineers (electricity, electronics, optics, mechanics).

Gestion d'évènements

  • Co-chair and co-roganizer. (2022) Integration of advanced materials on silicon: from classical to neuromorphic and quantum applications. (Workshop).
  • Member of the Program Committee. (2022) SPIE Photonic west. (Association).
  • Regional Chairs and co-organizer. (2021) Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS). (Conference).
  • Session Chair and Organiser. (2021) Nanoengineering session in Canadian Society for Chemical Engineering confenrece (CSChE). (Conference).
  • Member of the Program Committee. (2021) SPIE Photonic west. (Association).
  • Organizer. (2020) Industry academia workshop within the framwork of the Porous germanium Efficient Epitaxial LayErRelease for low cost high performance III-V solar cells (PEELER). (Workshop).
  • Member of the Program Committee. (2020) SPIE Photonic west. (Association).
  • co-organizer. (2019) Functional nanomaterials: joint uSherbrooke - uMontpellier 3 days workshop. (Workshop).

Activités de collaboration internationale

  • Permanent member. Canada. As a permanent member of the Centre québécois sur les matériaux fonctionnels/Quebec Centre for Advanced Materials (CQMF / QCAM), I contribute to the synthesis and functionalization of nanomaterials and semiconductors, characterization of their properties through a fundamental approach for energy applications. This provides me an opportunity to collaborate with national and international laboratories working in the field of functional materials for nanotechnology.
  • Member. France. Laboratoire des Nanotechnologies et des Nanosystemes (LN2)I am an active member of the international joint unit between Canada (uSherbrooke) and France (CNRS) named: which is located at the 3IT since 2008. This gives me access to a large number of resources and expertise through the large CNRS network in France. I also participate every 2 years in the dedicated workshops which is an excellent opportunity for networking with researchers from Europe and particularly from France.

Présentations

  • T. Mamoudou Diallo, M.R. Aziziyan, R. Arvinte, R. Arès, S. Fafard, A. Boucherif. (2022). CVD-growth of high-quality graphene over Ge(100) by annihilation of thermal pits. Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM). Massachusetts Institute of Technology, United States
  • L. Mouchel, J Arias-Zapata, B Ilahi, T Hanus, A. Boucherif. (2022). Conception d’un substrat de Germanium par une approche de double couche poreuse dédié à la croissance épitaxiale d’hétérostructures de matériaux III-V détachables. LN2 Colloquium. Annecy, France
  • A. Heintz, B. Ilahi, A. Pofelski, G. Botton, G. Patriarche, A. Barzaghi, S. Fafard, R. Arès, G. Isella, A. Boucherif. (2022). Defect free strain relaxation of microcrystals on mesoporous patterned silicon. European Material Research Society (EMRS). Warszawa, Poland
  • L. Mouchel, T. Hanus, J. Arias-Zapata, B. Ilahi, A. Boucherif. (2022). Design of mesoporous germanium bilayers by electrochemical etching. TOP-SET. Ottawa, Canada
  • N. Paupy, B. Ilahi, Z.O. Elhmaidi, V. Daniel, T. Hanuš T, R. Arvinte ,A. Brice, P. Mbeunmi, A. Heintz, T. Mamoudou Diallo, R. Arès, A. Boucherif. (2022). Epitaxial growth of detachable GaAs/Ge heterostructure on mesoporous Ge substrate for layer separation and substrate reuse. PVSC. Philadelphia, United States
  • N. Paupy, B. Ilahi, T. Hanuš, V. Daniel, R. Arès, A. Boucherif. (2022). Epitaxial growth of detachable III-V materials on mesoporous Ge substrate for layer transfer and substrate reuse. TOP-SET. Ottawa, Canada
  • T. Hanuš, B. Ilahi, J. Arias−Zapata, P.O. Provost, A. Chapotot, A. Boucherif. (2022). Fabrication of ultrathin Ge template for growth of high-performance III–V optoelectronic devices based on wafer-scale porous Ge. TOP-SET. Ottawa, Canada
  • L. Demoulin, M. R. Aziziyan, D. Machon, R. Ares, A. Boucherif. (2022). From Porous Germanium To Vertically Aligned Nanorods: A New Approach To Enable High Performance On-Chip Anodes. Porous Semiconductors-Science and Technology (PSST). Lido di Camaiore, Italy
  • H. Jonathan, A. Heintz, B. Ilahi, R. Ares, A. Boucherif. (2022). GaAs/Ge/Si nanovoided virtual substrate for low-cost III-V solar cells. TOP-SET. Ottawa, Canada
  • T. Hanuš, T.M, Diallo, A. Boucherif. (2022). Graphene engineering by plasma enables the growth of single crystalline semiconductors. QCAM - 6th annual meeting. Quebec, Canada
  • F. Zouaghi, A. Ayari, B. Ilahi, J. Chrétien, T. Hanus, N. Paupy, N. Quaegebeurand A. Boucherif. (2022). Impact of thermal annealing on the mechanical properties Ge epilayer on mesoporous germanium for layer separation and substrate reuse. PVSC. Philadelphia, United States
  • A. Boucherif. (2022). In‐Situ TEM observation of Oswald ripening in germanium growth on freestanding graphene and its application to wafer scale layer transfer process. Advanced Epitaxy for Freestanding Membranes and 2D Materials (AFEM). Massachusetts Institute of Technology, United States
  • A. Boucherif. (2022). In‐Situ TEM observation of Oswald ripening in germanium growth on freestanding graphene and its application to wafer scale layer transfer process (PEELER). TOP-SET. Ottawa, Canada
  • (2022). In‐Situ TEM observation of Oswald ripening in germanium growth on freestanding graphene and its application to wafer scale layer transfer process (PEELER). IMEC. bruxelles, Belgium
  • F. Zouaghi, A. Ayari, B. Ilahi, J. Chrétien, T. Hanus, N. Paupy, N. Quaegebeur, A. Boucherif. (2022). Mechanical properties of detachable Ge epilayer on reconstructed porous Ge. TOP-SET. Ottawa, Canada
  • V. Daniel, J. Chrétien, G. Hamon, M. de Lafontaine, N. Paupy, Z. O. El Hmaidi, B. Ilahi, T. Hanus, M. Darnon, A. Boucherif. (2022). Micro-fabrication and transfer of a detachable Ge epitaxial layer grown on porous germanium for PV application. TOP-SET. Ottawa, Canada
  • V. Daniel, J. Chretien, G. Hamon, M. De Lafontaine, N. Paupy, O. El Hmaidi, B. Ilahi, T. Hanus,M. Darnon, A. Boucherif. (2022). Micro-fabrication of a detachable Ge epitaxial layer grown on porous germanium for PV application. LN2 Colloquium. Annecy, France
  • V. Daniel, J Chretien, G Hamon, M De Lafontaine, N. Paupy, Z.O. El Hmaidi, B. Ilahi, T Hanus, M. Darnon, A. Boucherif. (2022). Micro-fabrication of a detachable Ge epitaxial layer grown on porous germanium for PV application. PVSC. Philadelphia, United States
  • V. Daniel, J. Chretien, G. Hamon, M. De Lafontaine, N. Paupy, Z. Oulad ElHmaidi, B. Ilahi, T. Hanuš, M. Darnon, A. Boucherif. (2022). Micro-fabrication of a detachable Ge epitaxial layer grown on porous germanium for PV application. Physics of Solar Cells. Les houches, France
  • N. Paupy, Z.O. Elhmaidi , A. Chapotot, T. Hanuš, J. Arias-Zapata1, B. Ilahi, A. Heintz, A. B. Poungoué Mbeunmi, R. Arvinte, M. R. Aziziyan, V. Daniel , G. Hamon, F. Zouaghi, A. Ayari, A. Boucherif. (2022). PEELER process: wafer scale epitaxial layer release and substrate reuse. Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM). Massachusetts Institute of Technology, United States
  • A. Ayari, B. Ilahi, R. Arvinte, T. Hanus, L. Mouchel, D. Machon, A. Boucherif. (2022). Porous-Ge reconstruction: Thermally induced tuning toward layer transfer and substrate re-use. TOP-SET. Ottawa, Canada
  • A. Chapotot, J. Arias-Zapata, J. Chrétien, T. Hanus, N. Paupy, V. Daniel, G. Hamon, B. Ilahi, M. Darnon, A. Boucherif. (2022). Reuse of Ge substrates for cost-effective fabrication of III-V/Ge thin solar cells. LN2 Colloquium. Annecy, France
  • A. Chapotot, J. Arias-Zapata,J. Chrétien, T. Hanus, N. Paupy, V. Daniel, G. Hamon, B. Ilahi, M. Darnon, A. Boucherif. (2022). Reuse of Ge substrates for cost-effective fabrication of III-V/Ge thin solar cells. PVSC. Philadelphia, United States
  • A. Chapotot, J. Arias-Zapata, J. Chrétien, T. Hanuš, N. Paupy, V. Daniel, G. Hamon, B. Ilahi, M. Darnon, A. Boucherif. (2022). Reuse of Ge substrates for cost-effective fabrication of III-V/Ge thin solar cells. Physics of Solar Cells. Les Houches, France
  • A. Yari, A. Boucherif. (2022). Thermal annealing adhesion force engineering of detachable Ge membrane on porous Ge. Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM). Massachusetts Institute of Technology, United States
  • T. Hanus, B. Ilahi, J. Arias-Zapata, P.O. Provost, A. Chapotot, A. Boucherif. (2022). Towards wafer-scale free-standing monocrystalline Ge membrane based on porous Ge substrate. Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM). Massachusetts Institute of Technology, United States
  • A. Ayari, B. Ilahi, T. Hanus, L. Mouchel, D. Machon, A. Boucherif. (2022). Tuning Thermal Induced Porous Ge Reconstruction for Layer Transfer and Substrate Reuse. PVSC. Philadelphia, United States
  • L. Mouchel, J. A. Zapata, B. Ilahi, A. Boucherif. (2022). Tunning Mesoporous Germanium Bilayers Formation by Electrochemical Etching. Porous Semiconductors-Science and Technology (PSST). Lido di Camaiore, Italy
  • T. Hanuš, T. M. Diallo, A. Ruediger, G. Patriarche, S. Fafard, R. Arès, A. Boucherif. (2022). Unfolding the role of defect engineering in graphene during Van der Waals epitaxy of semiconductors. European Material Research Society (EMRS). Warszawa, Poland
  • T. Hanuš, T. M. Diallo, A. Ruediger, G. Patriarche, S. Fafard, R. Arès, A. Boucherif. (2022). Unraveling the influence of plasma induced defects in graphene on the Van der Waals epitaxy of semiconductors. International Conference on Molecular Beam Epitaxy. Sheffield, United Kingdom
  • T. Mamoudou, M.R. Aziziyan, R. Arvinte, T. Hanuš, J-C Harmard, G. Patriarche, C. Renard, R. Arès, S. Fafard, A. Boucherif. (2022). Unravelling the dynamics of Van de Waals epitaxy of Ge over 2D graphene: New insight from in-situ transmission electron microscopy studies. Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM). Massachusetts Institute of Technology, United States
  • T. Hanuš, T. M. Diallo, A. Ruediger, G. Patriarche, S. Fafard, R. Arès, A. Boucherif. (2022). Unravelling the influence of plasma induced defects in graphene on the Van der Waals epitaxy of semiconductors. 19th Conference on Gettering and Defect Engineering in Semiconductor Technology. Mondsee, Austria
  • T. M. Diallo, M.R. Aziziyan, R. Arvinte, T. Hanuš, J-C Harmard, G. Patriarche, C. Renard, R. Arès, S. Fafard, A. Boucherif. (2021). In-situ TEM study of Van der Waals epitaxy of Ge over 2D graphene: New insights from real-time observations. European Material Research Society. Virtual, Canada
  • A. Boucherif. (2021). Nanoscale substrate engineering for cost-effective III-V solar cells. 21st ICMBE. Puerto Vallarta, Mexico
  • T.M. Diallo, M.R. Aziziyan, R. Arvinte, T. Hanuš, J-C Harmard, G. Patriarche, C. Renard, R. Arès, S. Fafard, A. Boucherif. (2021). Unraveling the dynamics of Van der Waals epitaxy of Ge over 2D graphene: New insights from in-situ transmission electron microscopy studies. International Conference on Molecular Beam Epitaxy. Puerto Vallarta, Mexico
  • A. Boucherif. (2020). Towards cost effective III-V photovoltaics with advanced substrate engineering. Photonics West. San Francisco, United States
  • A. Boucherif. (2019). Enabling III-V photovoltaics on Silicon with nanoscale substrate engineering. European Material Research Society E-MRS. Warsaw, Poland
  • S. Sauze*, N. Semmar, A. Stolz, P. Brault, A. Boucherif, and R. Arès, A. Boucherif. (2019). Thermoelectric properties of thin films of Graphene-Mesoporous Semiconductor Nanocomposites. European conference on Thermoelectrics (ECT 2019). Limassol, Cyprus
  • A. Boucherif. (2019). Towards cost effective III-V photovoltaics with advanced substrate engineering. Photonics north. Quebec, Canada
  • Y. A. Bioud*, A. Boucherif, E. Paradis, A. Soltani, D. Drouin and R. Ares. (2018). Defect-free, Hetero-epitaxy Through Electrochemical Etching of Germanium For Multijunction Solar Cells. Porous semiconductor science and technology. Grande Motte, France
  • A. Dupuy*, J. Nava-Avendano, J. Veilleux, R. Ares, S. Fafard, A. Boucherif. (2018). Graphene - mesoporous germanium nanocomposite as anode for lithium-ion batteries. Porous Semiconductor Science and Technolgy. Grande Motte, France
  • S. Sauze*, A. Stolz, N. Semmar, G. Kolhatkar, A. Ruediger, A. Korinek, N. Braidy, S. Fafard, R. Ares, A. Boucherif. (2018). Graphene – mesoporous Si or Ge nanocomposites for thermoelectric applications. Porous Semiconductor Science and Technolgy. Grande Motte, France
  • A. Boucherif. (2018). Nanocomposites à base de graphène pour les applications en énergie. École Nationale Polytechnique. Algeria
  • D. J. Jubgang Fandio, S. Sauze, R. Ares, A. Boucherif, and D. Morris. (2018). Terahertz spectroscopy of graphene-mesoporous silicon nanocomposites. Porous Semiconductor Science and Technology. Grande Motte, France
  • A. Boucherif, S. Sauze*, A.R. Boucherif*, A. Dupuy*, A. Kolhatkar*, A. Ruediger, S. Fafard, R. Arès. (2017). Combining graphene with 3D crystalline nanostructures: a new family of nanocomposites. Nanotoday. Hawaii, United States
  • A. Boucherif, S. Sauze*, A.R. Boucherif *, A. Dupuy*, A. Kolhatkar*, A. Ruediger,S. Fafard, R. Arès. (2017). Graphene-porous semiconductor nanocomposites scalable synthesis for energy applications. NanoCanada. Montreal, Canada
  • Y. Bioud, A. Boucherif, A. Belarouci, E. Paradis, S. Fafard, V. Aimez, Drouin D, Arès R. (2016). Chemical composition of anodically formed p-type porous gaas in hf-based electrolyte. Porous semiconductors science and technology (PSST). Tarragona, Spain
  • Y. Bioud*, A. Boucherif, A. Belarouci, E. Paradis, S. Fafard, V. Aimez, D. Drouin, R. Arès. (2016). Synthesis of mesoporous Ge films by high frequency bipolar electrochemical etching. Porous semiconductors science and technology (PSST). Tarragona, Spain
  • A. Boucherif, G. Kolhatkar, A. Ruediger, R. Arès. (2016). Virtual substrates engineering with graphene coated porous Si for multijunction solar cells. Emerging Technologies Conference, (CMOSET). montreal, Canada
  • Boucherif A, Beaudin G, Aimez V, Arès R. (2015). Free standing Ge seed films by using nanoporous group IV semiconductors. North American MBE Conference 2015. Cancun, Mexico
  • Boucherif A, Jaouad A, Cheriton R, Han S, Wilkins M, Valdivia C, Haysom J, Hinzer K, Fafard S, Aimez V, Arès R. (2015). GaAs solar cells on Mesoporous Silicon templates. 11th International Conference on Concentrator Photovoltaic Systems (CPV11). Aix-les-Bains, France
  • Boucherif A, Fafard S, Aimez V, Arès R. (2015). Virtual substrates engineering using porous Si and Ge nanostructures. the 9th International Conference on Silicon Epitaxy. Montreal, Canada
  • Boucherif A, Aimez V, Arès R. (2014). Lift-off process of III-V multijunction solar cells by using porous Ge sacrificial layers. Next Generation Solar Photovoltaics Canada. montreal, Canada
  • Boucherif A. (2014). Nanostructures for advanced concentrated photovoltaics (CPV). Nanostructures for Sensing and Energy Conversion NaSEC’14. Algiers, Algeria
  • Zribi J, Boucherif A, Paquette B, Ilahi B, Morris D, Arès R. (2013). Chemical Beam Epitaxy gowth tuning of vertically stacked InAs/GaAs quantum dots for intermediate band solar cell. 9th International Conference on Concentrating Photovoltaic Systems. Miyazaki, Japan
  • Kolhatkar G, Boucherif A, Fafard S, Aimez V, Arès R. (2013). Morphology study of GaNAs and AlGaNAs grown by chemical beam epitaxy. 30th North American Molecular Beam Epitaxy Conference. Banf, Canada
  • Kolhatkar G, Boucherif A, Fafard S, Aimez V, Arès R. (2013). Morphology study of GaNAs and AlGaNAs grown by chemical beam epitaxy. 30th North American Molecular Beam Epitaxy Conference. Banf, Canada
  • Boucherif A, Aimez V, Arès R. (2013). Nanoheteroepitaxy of GaAs on nanoporous Si templates. 30th North American Molecular Beam Epitaxy Conference. Banf, Canada
  • Paquette B, Boucherif A, Aimez V, Arès R. (2013). Novel low current, low heat flux multijunction solar cell design to maximize concentration and reduce costs. 9th International Conference on Concentrating Photovoltaic Systems. Miyazaki, Japan
  • Boucherif A,Tutashkonko S, Nychyporuk T, Kaminski-Cachopo A, Lemiti M, Aimez V, Arès R. (2012). Epitaxial Growth of III-V Semiconductors on Porous Germanium for Layer Transfer Process of multijunction solar cells. 8th International Conference on Concentrating Photovoltaic Systems. Toledo, Spain
  • Tutashkonko S, Boucherif A, Nychyporuk T, Kaminski-Cachopo A, Arès R, Aimez V, Lemiti M. (2012). Structural and morphological study of mesoporous Germanium layers formed by bipolar electrochemical etching. The Electrochemical Society. Hawaii, United States
  • Boucherif A, Blanchard N, Regreny P, Danescu A, Magoarie H, Marty O, Penuelas J, Bluet J.M, Guillot G, Lysenko V, Grenet G. (2010). Engineering pseudosubstrates with porous silicon technology. Joint 6th SemOI Workshop & 1st Ukrainian-French SOI Seminar. Kieve, Ukraine
  • Boucherif A, Blanchard N, Regreny P, Marty O, Guillot G, Grenet G, Lysenko V. (2010). Stress generating porous silicon substrates: a new tool for lattice engineering of thin films. Porous Semiconductors Science and Technology Conference. Valencia, Spain
  • Boucherif A. (2010). Synthesis and applications of porous Si. Industrial seminar at SOITEC inc. Grenoble, France