Serge Ecoffey

Financement

• Subvention. (Obtenu). Cocandidat. Development of novel quantum vacuum-based electronic devices platform and enabling its microfabrication methods. Conseil de Recherches en Sciences Naturelles et Génie du Canada (CRSNG). IPL - Infinite Potential Labs. Alliance. 256 500 $. (2022-2025)
• Subvention. (Obtenu). Collaborateur. Multi-user and low-cost silicon interposer platform for bio/quantum systems. Conseil de Recherches en Sciences Naturelles et Génie du Canada (CRSNG). CMC Microsystems. Alliance. 302 000 $. (2022-2025)
• Chaire de recherche. (Obtenu). Collaborateur. NSERC/Teledyne DALSA Industrial Research Chair in Next Generation MEMS and Microphotonics. PROMPT-Québec. Teledyne Dalsa. Industrial research Chair. 700 000 $. (2020-2024)
• Subvention. (Obtenu). Collaborateur. Hardware implementation of spiking neural networks based on hybrid CMOS-memristors circuits for ultralow-power artificial intelligence at the edge. Fonds de recherche du Québec - Nature et technologies (FRQNT). Projets de recherche en équipe. 229 620 $. (2021-2024)
• Subvention. (Obtenu). Cocandidat. UNICO - Unsupervised spiking neural networks with analog memristive devices for edge computing. Fonds de recherche du Québec - Nature et technologies (FRQNT). Narodowe Centrum Nauki (Poland). CHISTERA. 287 781 $. (2020-2022)
• Subvention. (Obtenu). Collaborateur. Porous germanium Efficient Epitaxial LayEr Release (PEELER) for low cost high performance III-V solar cells. Ministère du développement économique, de l'innovation et de l'exportation (MDEIE). Saint-Augustin Canada Electric Inc.. InnovEE. 750 000 $. (2019-2022)
• Subvention. (Obtenu). Cocandidat. Heterogeneous Integration of High-Density Analog Crossbar for Advanced Data Processing. Conseil de Recherches en Sciences Naturelles et Génie du Canada (CRSNG). Strategic Partnership Grants. 577 000 $. (2017-2021)
• Subvention. (Terminé). Cocandidat. STREAMS Plus – Technologies pour les Systèmes inTelligents pour la gestion theRmique haute EfficAcité de la Microélectronique avancée. Mathematics of Information Technology and Complex Systems (MITACS). MiQro Innovation Collaborative Centre. MITACS Accélération. 176 000 $. (2020-2020)
• Subvention. (Terminé). Cocandidat. Complementary resistance switching in nano crossbar arrays. Fonds Québécois de la Recherche sur la Nature et les Technologies (FQRNT). Projet de recherche en équipe. 123 000 $. (2013-2016)
• Subvention. (Terminé). Cocandidat. 3D heterogeneous platform with highly sensitive integrated gas sensors based on ultra-low power metal SETs circuits. NanoQuébec. Plasmionique (Industrial partner). INano. 106 666 $. (2013-2015)
• Subvention. (Terminé). Cocandidat. High energy electron beam lithography for ultimate resolution. Unité Mixte Internationale UMI 3463. 100 000 $. (2012-2013)
• Subvention. (Terminé). Collaborateur. Single Electron Devices on CMOS technology. Conseil de Recherches en Sciences Naturelles et Génie du Canada (CRSNG). Strategic (with ANR France). 617 000 $. (2009-2012)

Publications

Articles de revue

• Mouny P. A., Beillard Y, Graveline S, Roux M. A., El Mesoudy A*, Dawant R*, Gliech P*, Ecoffey S, Alibart F, Pioro-Ladriere M, Drouin D. (2022). A memristor-basedcryogenic programmable DC source for scalable in-situ quantum-dot control. Quantum Science and Technology (Révision demandée).
• El Mesoudy A*, Machon D, Ruediger A, Jaouad A, Alibar F, Ecoffey S, Drouin D. (2022). Band gap narrowinginduced by oxygen vacancies in reactively sputtered TiO2 thin films. ASC Applied Electronic Materials. (Article soumis).
• Liu T, Amirsoleimani A, Alibart F, Ecoffey S, Drouin D, Genov R. (2022). CODEX: StochasticEncoding Method to Relax Resistive Crossbar Accelerator Design Requirements. IEEE Transactions on Circuits and Systems II: Express Briefs (Article sous presse).
• Najah M*, Ecoffey S, Singh T, Ferguson M*, Roby L.-P.*, Renaud J, Gondcharton P, Banville F. A.,Boucherit M*, Charlebois S, Frechette L, Mansour R, Boone F. (2022). Characterization of awafer-level packaged Au-Ru/AlCu contact for micro-switches",. IEEE Journal of Microelectromechanical Systems (Article sous presse).
• Ferguson M*, Najah M*, Banville F. A.*, Boucherit M*, Gond-Charton P, Renaud J, Frechette L, Boone F, Ecoffey S, Charlebois S. A. (2022). Exploring RuCompatibility With Al-Ge Eutectic Wafer Bonding. IEEE Journal of Microelectromechanical Systems (Article sous presse).
• El Mesoudy, A*; Lamri, G*; Dawant, R*; Arias-Zapata, J; Gliech, P*; Beilliard, Y; Ecoffey, S; Ruediger, A; Alibart, F; Drouin, D. (2022). Fully CMOS-compatiblepassive TiO2-based memristor crossbars for in-memory computing. Microelectronic Engineering 255 111706. (Article publié).
• Dawant R* , Seils R, Ecoffey S, Schmid R, Drouin D. (2022). Hybrid crosscorrelation and line-scan alignment strategy for CMOS chips electron-beamlithography processing. Journal of Vacuum Science and Technology B B (40), 012601. (Article publié).
• Ferguson M*, Najah M*, Banville F. A.*, Boucherit M*, Miriyala N*, Renaud J, Frechette L, Boone F, Ecoffey S, Charlebois S. A. (2022). Mitigating reentrant etch profile undercut in Au etch with an aqua regia variant. IEEE Journal of Microelectromechanical Systems (Article soumis).
• Najah M*, Maaboudallah F, Boucherit M*, Ferguson M*, Frechette L, Charlebois S, Boone F, Ecoffey S. (2022). Spectral analysis ofthe topography parameters for isotropic Gaussian rough surfaces applied to goldcoating. Tribology International 165 107339. (Article publié).
• Stricher R*, Gond-Charton P, Amnache A, Ambia Campos J F, Frechette L, Drouin D, Ecoffey S. (2021). In-Situ DopedPolysilicon (ISDP) hydrophilic direct wafer bonding for MEMS applications. ECS Journal of Solid State Science and Technology 10 064010. (Article publié).
• Blonkowski S, Labalette M*, Jeannot S, Ecoffey S, Souifi A, Drouin D. (2021). Modeling Current and Voltage peaks generation in Complementary Resistive Switching devices. Solid State Electronics 183 108122. (Article publié).
• Liu T, Amirsoleimani A, Alibart F, Ecoffey S, Drouin D, Genov R. (2020). AIDX: AdaptiveInference Scheme to Mitigate State-Drift in Memristive VMM Accelerators. IEEE Transactions on Circuits and Systems II: Express Briefs 68 (4), (Article publié).
• Mehrej M*, Ecoffey S, Sadani B, Lee Sang B*, Baron T, David S, Drouin D, Salem B. (2020). A fabrication processfor self-connected horizontal SiGe nanowires. Microelectronic Engineering 220 (Article publié).
• Beillard Y, Paquette F, Brousseau F*, Ecoffey S, Alibart F, Drouin D. (2020). Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors undercryogenic conditions (1.5 K). AIP Advances 10 (2), (Article publié).
• Amirsoleimani A, Alibart F, Yon V, Xu J, Pazhouandeh M R, Ecoffey S, Beilliard Y, Genov R, Drouin D. (2020). In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspective. Advanced Intelligent Systems 2000115 (Article publié).
• Ayele G T*, Monfray S, Ecoffey S, Boeuf F, Cloarec J P, Drouin D, Souifi A. (2018). Ultrahigh-Sensitive CMOS pH Sensor Developed inthe BEOL of Standard 28 nm UTBB FDSOI. IEEE Journal of the Electron Devices Society 6 1026-1032. (Article accepté).
• Labalette M*, Jeannot S, Blonkowski S, Beilliard Y, Ecoffey S, Souifi A, Drouin D. (2017). Fabrication of planarback end of line compatible HfOx Complementary Resistive Switches. IEEE Transactions on Nanotechnology 16 (5), 745 - 751. (Article publié).
• Rahhal L, Ayele G T*, Monfray S, Cloarec J-P, Fornacciari B, Padroux E, Du F, Chevalier C, Ecoffey S, Drouin D, Morin P, Garnier P, Boeuf F, Souifi A. (2017). High Sensitivity pHSensing in BEOL of industrial FDSOI Transistors. Solid-State Electronics 134 22-29. (Article publié).
• Bonafos C, Benassayag G, Cours R, Pecassou B, Guenery P V, Baboux N, Militaru L, Souifi A, Cossec E*, Hamga K*, Ecoffey S, Drouin D. (2017). Ion beam synthesis of indium-oxide nanocrystals for improvementof Oxide Resistive Random-Access Memories. Materials Research Express (Article soumis).
• Droulers G*, Ecoffey S, Pioro-Ladriere, Drouin D. (2017). Metallic Single Electron Transistors: Impact of Parasitic Capacitances on Small Circuits. IEEE Transactions on Electron Devices 64 (12), 5202 - 5208. (Article publié).
• Tesega Ayele G*, Rahhal L, Monfray S, Boeuf F, Cloarec J.-P., Ecoffey S, Drouin D, Souifi A. (2017). TCAD Simulation of anIon Sensitive Field Effect Transistor with a Sensitive Gate Integrated in the Back-End-of-Lineof a Fully-Depleted Silicon-on-Insulator Industrial Platform. IEEEE Transactions on Electron Devices (Révision demandée).
• Drouin D, Droulers G*, Labalette M*, Lee Sang B*, Harvey-Collard P*, Souifi A, Jeannot S, Monfray S, Pioro-Ladriere M, Ecoffey S. (2016). A fabrication process for emerging nanoelectronic devices based on oxide tunnel junctions. Journal of Nanomaterials (Article publié).
• Lee Sang B*, Sadani B, Ecoffey S, Monfray S, Drouin D. (2016). CMOS compatible fabrication process ofTiN/Al2O3/TiN tunnel junctions for BEOL integration of single electron transistors. Microelectronic Engineering (Article soumis).
• Mehrej M*, Drouin D, Baron T, Salem B, Ecoffey S. (2016). Fabrication of top-down gold nanostructures using a damascene process. Microelectronic Engineering (Article publié).
• Ayadi Y*, Rahhal L, Vilquin B, Chevalier C, Ambris Vargas F, Ecoffey S, Ruediger A, Sarkissian A, Monfray S, Cloarec J-P, Souifi A, Drouin D. (2016). Novel concept of gas sensitivity characterization of materials suited for implementation in FET-based gas sensors. Nanoscale Research Letters (Article publié).
• Droulers G*, Ecoffey S, Pioro-Ladriere M, Drouin D. (2016). Planar TunnelJunctions: A Time Stability Study. Journal of Vacuum Science and Technology B (Article publié).
• Lee Sang B*, Gour M-J, Jaouad A, Ecoffey S, Darnon M, Sadani B, Souifi A, Drouin D. (2015). Inductively coupled plasma etching of ultra-shallow Si3N4 nanostructures using SF6/C4F8chemistry. Microelectronic Engineering 141 (Article publié).
• Lee Sang B*, Gour M-J, Darnon M, Ecoffey S, Jaouad A, Sadani B, Drouin D. (2015). Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductivelycoupled plasma. Journal of Vacuum Science and Technology B 34 (2), (Article publié).
• El Hajjam K*, Bounouar M A, Baboux N, Ecoffey S, Guilmain M*, Puyoo E, Francis L A, Souifi A, Drouin D, Calmon F. (2015). Tunnel Junction Engineering for Optimized Metallic Single-Electron Transistor. IEEE Transactions on Electron Devices 62 (9), (Article publié).
• El Hajjam K*, Baboux N, Calmon F, Ecoffey S, Poncelet O, Francis L, Souifi A, Drouin D. (2014). Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunneljunction engineering. Journal of Vacuum Science and Technology A 32 (Article publié).
• Guilmain M*, Labbaye T , Dellenbach F*, Nauenheim C , Drouin D , Ecoffey S. (2013). A damascene platform for controlled ultra-thin nanowire fabrication. Nanotechnology 24 (24), (Article publié).
• Jouvet N*, Bounouar M A, Ecoffey S, Nauenheim C, Beaumont A, Monfray S, Ruediger A, Calmon F, Souifi A, Drouin D. (2012). Recent developments on 3D intregation of metallic SET onto CMOS process for memory application. International Journal of Nanoscience 11 (4), (Article publié).
• Guilmain M*, Jaouad A, Ecoffey S, Drouin D. (2011). SiO2 shallow nanostructures ICP etching using ZEP electroresist. Microelectronic Engineering 88 (Article publié).
• Ecoffey S, Guilmain M*, Morissette J F, Bourque F*, Pont J*, Lee Sang B*, Drouin D. (2011). Technology platform for the fabrication of titanium nanostructures. Journal of Vacuum Science and Technology B 29 (6), (Article publié).
• Ecoffey S, Pott V, Mahapatra S, Bouvet D, Fazan P, Ionescu A M. (2005). A hybrid CMOS–SET co-fabrication platform using nano-grain polysilicon wires. Microelectronic Engineering 78 - 79 (Article publié).
• Santinacci L, Djenizan T, Hildebrand H, Ecoffey S, Mokdad H, Campanella T, Schmuki P. (2003). Selective palladium electrochemical deposition onto AFM-scratched silicon surfaces. Electrochimica Acta 48 (Article publié).
• Ecoffey S, Bouvet D, Ionescu A M, Fazan P. (2002). Low-pressure chemical vapour deposition of nanograin polysilicon ultra-thin films. Nanotechnology 13 (Article publié).

Articles de conférence

• De Lafontaine M, Gay G, Pargon E, Petit-Etienne C, Stricher R*, Ecoffey S, Turala A, Volatier M, Jaouad A, Fafard S, Aimez V, Darnon M. (2022). Micro-Scale III-V/GeMultijunction Solar Cell with Through Cell Via Contacts. 49th IEEE Photovoltaic Specialists Conference. (Article accepté).
• Dawant R*, Ecoffey S, Seils R, Schmid R, Drouin D. (2021). Comparison of alignment markers and method for electron-beam lithography on CMOS dies. The 64th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication - EIPBN. (Article accepté).
• De Lafontaine M, Gay G, Pargon E, Petit-Etienne C, Stricher R*, Ecoffey S, Volatier M, Jaouad A, Fafard S, Aimez V, Darnon M. (2021). III-V/GeMultijunction Solar Cell with Through Cell Via Contact Fabrication andCharacterization. 48th IEEE Photovoltaic Specialists Conference, PVSC 48. (Article accepté).
• Blonkowski S, Labalette M*, Jeannot S, Ecoffey S, Souifi A, Drouin D. (2021). Modeling Current and Voltage peaks generation in Complementary Resistive Switching devices. INFOS2021 22th Conference on Insulating Films on Semiconductors. (Article accepté).
• Najah M*, Ferguson M*, Boucherit M*, Guilmain M, Renaud J, Fréchette L, Charlebois S, Boone F, Ecoffey S. (2021). Ru plasma etching process for thermally stable and low resistivity contacts. 47th International Conference on Micro and Nano Engineering, MNE 2021. (Article accepté).
• Stricher R*, Gond-Charton P, Poirier J-S, Drouin D, Ecoffey S. (2020). Polysilicon CMP fordirect bonding and MEMS wafer level packaging. International Conference on Planarization Technology ICPT 2020. (Article soumis).
• Souifi A, Ayele G T*, Cloarec J P, Boeuf F, Ecoffey S, Drouin D, Monfray S. (2020). Sensing performances of integrated ISFETs on 28 nm CMOS FDSOI technology. IEEE Sensors France International Workshop 2020. (Article accepté).
• Bioud Y A, Beattie M N, Boucherif A, Jellit M, Stricher R*, Ecoffey S, Patriarche G, Troadec D, Soltani A, Braidy N, Wilkins M, Valdivia C E, Hinzer K, Drouin D, Ares R. (2019). A Porous Ge/Si Interface Layer for Defect-free III-V Multi-Junction Solar Cells on Silicon. Proceedings of SPIE: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, (Article publié).
• Calvo M, Beaudin G, Mercier-Coderre L, Girault P, Rojo Romeo P, Stricher R*, Ecoffey S, Drouin D, Bœuf F, Canva M, Monfray S, Orobtchouk R, Charette P G. (2019). Improving Silicon Nitride Ring Resonator Performances On 300 mm Industrial Environment For Pointof Care Applications. SPIE Photonics Europe. (Article accepté).
• Beilliard Y, Paquette F, Brousseau F*, Ecoffey S, Alibart F, Drouin D. (2019). Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-based Memristors at Cryogenic Temperature (1.5 K). IEEE Nanotechnology Materials and Devices Conferences NMDC 2019. (Article accepté).
• Elshaer A*, Stricher R*, Darnon M, Drouin D, Ecoffey S. (2019). Patterning Platinum using CMP and plasma etching industrially compatible processes. 45th International Conference on Micro and Nano Engineering MNE 2019. (Article accepté).
• Stricher R*, Elshaer A*, Drouin D, Ecoffey S. (2019). Pt and Au planarization for the fabrication of micro- and nano- structures. 23rd International Symposium on Chemical-Mechanical Planarization. (Article accepté).
• Ayele G T*, Monfray S, Ecoffey S, Boeuf F, Cloarec J P, Drouin D, Souifi A. (2018). Highly Performant Integrated pH-Sensor Using the Gate Protection Diode in the BEOL of Industrial FDSOI. IEDM 2018 - International Electron Devices Meeting. (Article accepté).
• Maalaoui A, Frenea-Robin M, Genest J, Ecoffey S, Beauvais J, Charette P, Drouin D, Cloarec J P. (2018). Towards miniaturized pH sensor based on carbon nanotubes assembled by DEP on titanium electrodes?. 2018 IEEE International Conference on Industrial Technology (ICIT). (Article publié).
• Ayele G T*, Monfray S, Ecoffey S, Boeuf F, Bon R, Cloarec J P, Drouin D, Souifi A. (2018). Ultrahigh-Sensitive and CMOS Compatible ISFET Developed in BEOL of Industrial UTBB FDSOI. Symposia on VLSI Technology. (Article accepté).
• Ayele G T*, Souifi A, Cloarec J P, Monfray S, Boeuf F, Ecoffey S, Drouin D. (2018). Ultrasensitive CMOS Electro-chemical Sensor Based on Fully Depleted SOI MOSFET. IEEE NANO 2018 International Conference on Nanotechnology. (Article publié).
• Ben Assayag G, Bonafos C, Pecassou B, Drouin D, Ecoffey S, Souifi A, Torregrosa F. (2017). Innovative OxRAMnanomemories with indium oxide nanocrystals fabricated by ultra low energy ionimplantation. European Materials Research Society Spring Meeting, E-MRS 2017. (Article publié).
• Ecoffey S, Drouin D. (2017). Nanoscale damasceneprocesses for patterning and devices fabrication. SPIE Advanced Lithography. (Article publié).
• Merhej M*, Honegger T, Ecoffey S, Bassani F, Baron T, Peyrade D, Drouin D, Salem B. (2017). Toward 3D integrationof self-assembled horizontal Si and SiGe nanowires on CMOS chip. European Materials Research Society Fall Meeting, E-MRS 2017. (Article accepté).
• Ayele G T, Monfray S, Boeuf F, Cloarec J-P, Ecoffey S, Drouin D, Puyoo E, Souifi A. (2017). UltrasensitiveExtended-Gate Ion-Sensitive-Field-Effect-Transistor Developed Utilizing anIndustrial UTBB FDSOI Platform. European Solid-State Device Research Conference, ESSDERC 2017. (Article accepté).
• Merhej M*, Drouin D, Salem B, Ecoffey S. (2016). A damascene process for gold micro- and nano- structures. 42nd International Conference on Micro and Nano Engineering, MNE 2016. (Article publié).
• Droulers G*, Ecoffey S, Pioro-Ladriere M, Drouin D. (2016). A manufacturable process for single electron charge detection, a step towards quantum computing. IEEE Xplore, (Article publié).
• Lee Sang B*, Ecoffey S, Monfray S, Drouin D. (2016). CMOS BEOL compatible process for the fabrication of single electron transistors, using TiN/Al2O3/TiNjunctions. 42nd International Conference on Micro and Nano Engineering, MNE 2016. (Article publié).
• Labalette M*, Ecoffey S, Jeannot S, Soufi A, Drouin D. (2016). HfOx complementary resistive switches. IEEE Nanotechnology Materials and Devices Conferences NMDC 2016. (Article publié).
• Souifi A, Cossec E*, Hamga K*, Guenery P-V, Troudi M, El Hajjam K*, Benea L, Baboux N, Militaru L, Hebras X, Bonafos C, Ben Assayag G, Pecassou B, Ecoffey S, Drouin D. (2016). Integration and Electrical Characterization of Indium-Oxide Nanoparticles in Oxide ResistiveRandom-Access Memories. CMOS Emerging Technologies, CMOSET 2016. (Article publié).
• Labalette M*, Ecoffey S, Blonkowski S, Jeannot S, Souifi A, Drouin D. (2016). Planar HfOx basedReRAM using nanodamascene process. NANO 2016, 13th International Conference on Nanostructured Materia. (Article publié).
• Ben Assayag G, Carles C, Bonafos C, Pecassou B, Hebras X, Schamm-Chardon S, Drouin D, Ecoffey S, Souifi A. (2016). Ultra Low Energy Ion Beam Synthesis: An Original Method for the Fabrication of Nanocrystals inDielectrics for Nanoelectronics, Nano-Optics and Plasmonic Applications. CMOS Emerging Technologies, CMOSET 2016. (Article publié).
• Ayadi A*, Lee Sang B*, Sadani B, El Hajjam K*, Ecoffey S, Calmon F, Souifi A, Drouin D. (2015). 3D integration of double gate single electron transistors in the CMOS Back-End-Of-Line for ultra-low power gas sensing. 17th Canadian Semiconductor Science and Technology Conference, CSSTC 2015. (Article publié).
• Drouin D, Bounouar M A, Droulers G*, Labalette M*, Pioro-Ladriere M, Souifi A, Ecoffey S. (2015). 3D microelectronic with BEOL compatible devices. IEEE Xplore, (Article publié).
• Labalette M*, Ecoffey S, Drouin D. (2015). Fabrication of nanoplanar resistive RAM devices using the nanodamascene process. 17th Canadian Semiconductor Science and Technology Conference, CSSTC 2015. (Article publié).
• Ayadi Y*, Rahhal L, Vilquin B, Chevalier C, Ambris Vargas F, Ecoffey S, Ruediger A, Sarkissian A, Monfray S, Cloarec J-P, Drouin D, Souifi A. (2015). Novel concept of gas sensitivity characterization of materials suited for implementation in FET-based gas sensors. 6th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs, Micro&Nano. (Article publié).
• Droulers G*, Ecoffey S, Pioro-Ladriere M, Drouin D. (2015). Planar Tunnel Junctions: A Time Stability Study. 17th Canadian Semiconductor Science and Technology Conference, CSSTC 2015. (Article publié).
• Ionescu M, Ayadi Y*, Cote C, Ecoffey S, Nouar R, Wolfe S, Drouin D, Porter R, Sarkissian A. (2015). Plasma and Vacuum Assisted Synthesis of Nanostructured Carbon Allotropes and Applications to Gas Sensors. Graphene Canada. (Article publié).
• Droulers G*, Ecoffey S, Pioro-Ladriere M, Drouin D. (2015). Quantum Cellular Automata: Design and Fabrication with the Nanodamascene Process. 41st International Conference on Micro and Nano Engineering, MNE 2015. (Article publié).
• Drouin D, Droulers G*, Labalette M*, Lee Sang B*, Harvey-Collard P, Pioro-Ladriere M, Ecoffey S. (2015). The nanodamascene process: a versatile fabrication technique. IEEE Xplore, (Article publié).
• Droulers G*, Ecoffey S, Guilmain M*, Souifi A, Pioro-Ladriere M, Drouin D. (2014). Damascene Planar Metal-Insulator-Metal Tunnel Junctions. IEEExplore, (Article publié).
• Lee Sang B*, Jaouad A, Ecoffey S, Darnon M, Gour M-J, Sadani B, Souifi A, Drouin D. (2014). Inductively Coupled Plasma Etching of Ultra-Shallow Si3N4 and SiO2 Nanostructures. 40th International Conference on Micro and Nano Engineering, MNE 2014. (Article publié).
• Drouin D, Ecoffey S, El Hajjam K*, Lee Sang B*, Sadani B, Harvey-Collard P, Valverde L*, Labalette M*, Calmon F, Souifi A. (2014). Integration of nanoelectronic devices within BEOL of CMOS circuit. European Materials Research Society Fall Meeting, E-MRS 2014. (Article publié).
• Lee Sang B*, Gour M-J, Darnon M, Ecoffey S, Jaouad A, Sadani B, Souifi A, Drouin D. (2014). Selective Dry Etching of Titanium Nitride Nanostructures with Chlorine-Based Inductively Coupled Plasma. 40th International Conference on Micro and Nano Engineering, MNE 2014. (Article publié).
• El Hajjam K*, Baboux N, Ecoffey S, Francis L, Souifi A, Calmon F, Drouin D. (2013). Crested Barrier Tunnel Junctions Using PEALD Al2O3/HfO2 Stackings. 13th International Conference on Atomic Layer Deposition ALD 2013. (Article publié).
• Ecoffey S, Guilmain M*, Nauenheim C, Drouin D. (2013). Nanometer scale titanium structures planarization. 18th International Symposium on Chemical-Mechanical Planarization. (Article publié).
• Souifi A, Jouvet N, Ecoffey S, Guilmain M*, Naueunheim C, Ruediger A, Beaumont A, Calmon F, Monfray S, Drouin D. (2012). 3D integration of low power nanoelectronic devices above CMOS circuits. Nanoscale Science & Technology, NANOST12. (Article publié).
• Ecoffey S, Guilmain M*, Droulers G*, Landry S*, Nauenheim C, Ruediger A, Drouin D. (2012). Chemical mechanical planarization of titanium micro and nano-structures. 38th International Conference on Micro and Nano Engineerin MNE 2012. (Article publié).
• Griveau D, Ecoffey S, Parekh R M, Bounouar M A, Calmon F, Beauvais J, Drouin D. (2012). Single Electron CMOS-Like One Bit Full Adder. IEEE Xplore, (Article publié).
• Bounouar M A, Calmon F, Beaumont A, Guilmain M*, Xuan W, Ecoffey S, Drouin D. (2011). Single Electron Transistor Analytical Model for Hybrid Circuit Design. IEEE Xplore, (Article publié).
• Ecoffey S, Morissette J F, Guilmain M*, Bourque F*, Pont J, Lee Sang B, Drouin D. (2011). Top-down approaches for the fabrication of titanium nanostructures. 55th International Conference on Electron, Ion, and Photon Beam Technology, and Nanofabrication EIPBN 2011. (Article publié).
• Ecoffey S, Morissette J F, Jedidi N, Guilmain M*, Nauenheim C, Drouin D. (2011). Ultrathin Titanium Passive Devices Fabrication. IEEE Xplore, (Article publié).
• Guilmain M*, Jaouad A, Ecoffey S, Drouin D. (2010). Nanoscale SiO2 ICP etching. 36th International Conference on Micro- and Nano-Engineering MNE 2010. (Article publié).

Autres contributions

Activités de collaboration internationale

• Researcher. Canada. UMI-LN2.
• Researcher. France. Labo commun ST.