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Abderraouf Boucherif

Professeur, Faculté de génie

FAC. GÉNIE Mécanique

Présentation

Sujet de recherche

Energy Storage, Micro and Nanoelectronics, Nanomaterials

Disciplines de recherche

Material Engineering and Metallurgic Engineering, Mechanical Engineering, Physical Engineering

Mots-clés

Heterogeneous integration, Group IV semiconductors, Lattice engineering, Porous semiconductors, Silicon anodes for Lithium-ion Batteries, Epitaxy, III-V Materials, green photonics, Phtotovoltaics, Graphene, Nanocomposites, Energy storage, IoT

Intérêts de recherche

My research interests include the synthesis and characterization of semiconductor nanomaterials and thin films for optoelectronics, energy, quantum and IoT applications. More specifically, I work on the synthesis of nanoporous silicon and germanium by self-organized electrochemical porosification to create novel nanoscale morphologies, study their properties for applications such as: i) Hetero-integration of discimilar semiconductors ii) for layer transfer process to create light and flexible photonic and photovoltaic devices, iii) Anodes for high-energy, high-power Li-ion batteries. I also work on the growth and characterization of semiconductors films, nanostructures and 2D materials (Graphene) by epitaxy (CVD, MBE, CBE). More recently, I developped nanocomposites materials that combine 2D materials such as graphene with porous semiconductor and study their properties for future applications in photovoltaics and Li-ion batteries.

Langues parlées et écrites

Anglais, Français

Diplômes

(2010). Pseudosubstrats accordables en paramètre de maille à base de silicium poreux pour l’hétéroépitaxie de matériaux IV-IV et III-V. (Doctorate, Ph.D. Material Science). Institut National des Sciences Appliquées de Lyon.

(2007). (Master's Thesis, MSc). Universite Jean Monnet.

(2005). (Bachelor's, Bachelor's degree). Universite Jean Monnet.

Expérience académique

Assistant Professor. (2018-). Université de Sherbrooke. Canada.

Adjunct Professor and Senior Research Scientist. (2017-2018). Université de Sherbrooke. Canada.

Invited scientist. (2018-2018).

Research Scientist. (2014-2017). Université de Sherbrooke. Canada.

Research Associate. (2012-2014). Université de Sherbrooke. Canada.

Research/Postdoctoral Fellow. (2010-2012). Université de Sherbrooke. Canada.

Research Assistant (Ph.D.). (2007-2010). Institut National des Sciences Appliquées de Lyon. France.

Research Assistant (MSc.). (2006-2007). National Research Council Canada. Canada.

Prix et distinctions

  • (2020) Research work featured in Compound semiconductor Magazine. compound semiconductors. (Citation).
  • (2020) Tremplin Prize. Université de Sherbrooke. (Prize / Award).
  • (2019) Best poster award. Canadian Semiconductor Science and Technology Conference. (Prize / Award).
  • (2018) Guest scientist. Université d'Orleans. (Distinction).
  • (2018) Popular science prize. Université de Sherbrooke. (Prize / Award).
  • (2017) Best presentation award. Canadian Semiconductor Science and Technology Conference. (Prize / Award).
  • (2017) Initiative-Innovation. Université de Sherbrooke. (Distinction).
  • (2015) Public Choice Poster Award. Next Generation Solar Photovoltaics Canada. (Prize / Award).
  • (2009) Best Young Scientist Award. European Material Research Society. (Prize / Award).
  • (2008) First Runner-up Poster Award. Porous Semiconductors Science and Technology. (Prize / Award).

Publications

Articles de revue

  • Arthur Dupuy, Mohammad Reza Aziziyan, Denis Machon, Richard Arès, Abderraouf Boucherif. (2021). Anisotropic mesoporous germanium nanostructures by fast bipolar electrochemical etching. Electrochimica Acta 378 137935. (Published).
  • Alexandre Juneau-Fecteau, Rémy Savin, Abderraouf Boucherif, Luc G Fréchette. (2021). A practical Tamm plasmon sensor based on porous Si. AIP Advances 11 (6), 065305. (Published).
  • Thierno Mamoudou Diallo, Mohammad Reza Aziziyan, Roxana Arvinte, Richard Arès, Simon Fafard, Abderraouf Boucherif. (2021). CVD growth of high-quality graphene over Ge (100) by annihilation of thermal pits. Carbon (Published).
  • Thierno Mamoudou Diallo, Mohammad Reza Aziziyan, Roxana Arvinte, Jean‐Christophe Harmand, Gilles Patriarche, Charles Renard, Simon Fafard, Richard Arès, Abderraouf Boucherif. (2021). In‐Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der Waals Epitaxy. Small 2101890. (Published).
  • Arthur Dupuy, Aude Roland, Mohammad Reza Aziziyan, Stéphanie Sauze, Denis Machon, Richard Arès, Abderraouf Boucherif. (2021). Monolithic integration of mesoporous germanium: A step toward high-performance on-chip anode. Materials Today Communications (26), 101820. (Published).
  • D Machon, S Sauze, R Arès, A Boucherif. (2021). Probing the coupling between the components in a graphene–mesoporous germanium nanocomposite using high-pressure Raman spectroscopy. Nanoscale Advances 3 (9), 2577-2584. (Published).
  • El‐Gahouchi, M.; Aziziyan, M.R.; Arès, R.; Fafard, S.; Boucherif, A. (2020). Cost‐effective energyharvesting at ultra‐high concentration with duplicated concentratedphotovoltaic solar cells. Energy Science & Engineering 8 2760–2770. (Published).
  • Poungoue Mbeunmi, A. B. *; El-Gahouchi*, M. ; Arvinte*, R. ; Jaouad, A. Cheriton, R. Wilkins, M. Valdivia, C.E. Hinzer, K. Fafard, S. ; Aimez,V. ; Boucherif, A. (2020). Direct growth of GaAssolar cells on Si substrate via mesoporous Si buffer. Solar Energy Materials and Solar Cells 217 110641. (Published).
  • Youcef A Bioud, Maxime Rondeau, Abderraouf Boucherif, Gilles Patriarche, Dominique Drouin, Richard Arès. (2020). Effect of sintering germanium epilayers on dislocation dynamics: From theory to experimental observation. Acta Materialia 200 (608-618), (Published).
  • Youcef, Bioud; MaximeRondeau; Abderraouf, Boucherif; Gilles Patriarche; Dominique Drouin; RichardArès. (2020). Effect of sintering germanium epilayers on dislocation dynamics: from theory to experimental observation. Acta Materialia (In Press).
  • Alex Brice Poungoue Mbeunmi, Roxana Arvinte, Hubert Pelletier, Mourad Jellite, Richard Arès, Simon Fafard, Abderraouf Boucherif. (2020). Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor. Journal of Crystal Growth (547), 12580. (Published).
  • Stéphanie Sauze, Mohammad Reza Aziziyan, Pascal Brault, Gitanjali Kolhatkar, Andreas Ruediger, Andreas Korinek, Denis Machon, Richard Arès and Abderraouf Boucherif. (2020). Integration of 3D nanographene into mesoporousgermanium. Nanoscale 12 (47), 23984-2399. (Published).
  • Mourad Jellite, Maxime Darnon, Roxana Arvinte, Mohammad Reza Aziziyan, Denis Machon, Abderraouf Boucherif, and Richard Arès. (2020). Surface preparation of porous Si – graphene nanocomposites for heteroepitaxy. JVST 38 (5), 423. (Published).
  • Fandio, D.; Sauze, S*.; Boucherif, A.; Arès, R.; Ilahi, B.; Morris, D. (2020). Terahertz photoconductivity and photocarrier dynamics in graphene–mesoporous silicon nanocomposites. PHYSICAL REVIEW B 102 115. (Published).
  • T.M. Diallo, A.B. Poungoué M., M. El-Gahouchi, M. Jellite, R. Arvinte, M.R. Aziziyan, R. Arès, S. Fafard, A. Boucherif. (2019). Hybrid Epitaxy Technique for the Growth of High Quality AlInAs and InGaAs Layers on InP Substrates. Journal of Vacuum Science & Technology B (031208), (Published).
  • Y. A. Bioud, M. Rondeau, A. Boucherif, D. Drouin and R. Arès. (2019). Sintering of Nanoporous Germanium for Defect Reduction in Ge on – Si Epitaxial Layers. APL Materials (Submitted).
  • A. Juneau-Fecteau, R. Savin, A. Boucherif, and L. G. Fréchette. (2019). Tamm Phonon-Polaritons: Localized states from phonon-light interactions. Applied Physics Letters 114 141101. (Published).
  • Bioud YA, Boucherif A, Paradis E, Soltani A, Drouin D, Arès R. (2019). Uprooting defects to enablelight-emitting III-V on Si. Nature Communications 10 4322. (Published).
  • York M CA, Mailhot A*, Boucherif A, Arès R, Aimez V, Fafard S. (2018). Challenges and strategies for implementing the vertical epitaxial heterostructure architechture (VEHSA) design for concentrated photovoltaic applications. Solar Energy Materials and Solar Cells 181 46-52. (Published).
  • Kolhatkar G, Boucherif A, Boucherif AR, Dupuy A, Fréchette LG, Arès R, Ruediger A. (2018). Extreme temperature stability of thermally insulating graphene-mesoporous-silicon nanocomposite. Nanotechnology 29 (14), 145701. (Published).
  • G. Kolhatkar, A. Boucherif, A.R. Boucherif, A. Dupuy, L. G. Fréchette, R. Arès. (2018). Extreme temperature stability of thermally insulating graphene-porous-silicon nanocomposite. Nanotechnology 29 (14), 145701. (Published).
  • Boucherif A, Radescu S, Are?s R, Mujica A, Me?linon P, Machon D. (2018). Metastable States in Pressurized Bulk and Mesoporous Germanium. The Journal of Physical Chemistry C 122 (20), 10929-10938. (Published).
  • Beattie M, Bioud Y A, Hobson D, Boucherif A, Valdivia C, Drouin D, Arès R, Hinzer K. (2018). Tunable conductivity in mesoporous germanium. Nanotechnology 29 (21), 215701. (Published).
  • Wilkins M, Gupta J, Jaouad, Bouzazi B, Fafard S, Boucherif A, Valdivia C, Arès R, Aimez V, Schriemer H, Hinzer K. (2017). Design of thin InGaAsN (Sb) nip junctions for use in four-junction concentrating photovoltaic devices. Journal of Photonics for Energy 7 (2), 022502-022502. (Published).
  • Bioud Y*, Boucherif A, Belarouci A, Paradis E, Fafard S, Aimez V, Drouin D, Arès R. (2017). Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching. Electrochimica Acta 232 422-430. (Published).
  • Boucherif A.R*, Boucherif A, Kolhatkar G, Ruediger A, Arès R. (2017). Graphene–Mesoporous Si Nanocomposite as a Compliant Substrate for Heteroepitaxy. Small 13 (18), 1603269. (Published).
  • Kolhatkar G, Boucherif A, Boucherif AR, Dupuy A, Fréchette L, Arès R, Ruediger A. (2017). Thermal conductivity ofgraphene-stabilized mesoporous silicon nanocomposite by Raman spectroscopy. ACS NANO (Submitted).
  • Bioud Y*, Boucherif A, Belarouci A, Paradis E, Drouin D, Arès R. (2016). Chemical composition of nanoporous layer formed by Electrochemical Etching of p-Type GaAs. Nanoscale Research Letters 11 (1), 446. (Published).
  • Kolhatkar G*, Boucherif A, Dab A, Fafard S, Aimez V, Arès R, Ruediger A. (2016). Composition Variation in Al-Based Dilute Nitride alloys Using Apertureless Scanning Near-Field Microscopy. RCS Physical Chemistry Chemical Physics 18 (44), 30546-30553. (Published).
  • Kolhatkar G*, Boucherif A, Bioud Y*, Fafard S, Ruediger A, Aimez V, Arès R. (2016). Electrical and structural properties of AlGaNAs alloys grown by chemicalbeam epitaxy. Physica Status Solidi (b) 253 (5), 918–922. (Published).
  • Paquette B*, Boucherif A, Aimez V, Arès R. (2016). Novel multijunction solar cell design for low cost, high concentrationsystems. Progress in Photovoltaics: Research & Applications 24 (2), 150-158. (Published).
  • Kolhatkar G*, Boucherif A, Fafard S, Aimez V, Arès R. (2014). Growth optimization and optical properties of AlGaNAs alloys. Journal of Applied Physics 115 163513. (Published).
  • Boucherif A, Korinek A, Aimez V, Arès R. (2014). Near-Infrared emission from Mesoporous Crystalline Germanium. AIP Advances 4 107128. (Published).
  • Kolhatkar G*, Boucherif A, Valdivia C.E, Wallace S.G, Fafard S, Aimez V, Arès R. (2013). Al-enhanced N incorporation in GaNAs alloys grown by Chemical BeamEpitaxy. Journal of Crystal Growth 380 256-260. (Published).
  • Blaffard F*, Boucherif A, Aimez V, Arès R. (2013). Control of mesoporoussilicon initiation by cathodic passivation. Electrochemical communications 36 84. (Published).
  • Tutashkonko S*, Boucherif A, Nychyporuk T, Kaminski-Cachopo A, Arès R, Lemiti M, Aimez V. (2013). Mesoporous Germanium formed by bipolar electrochemical etching. Electrochimica Acta 88 256-262. (Published).
  • Boucherif A, Beaudin G, Aimez V, Arès R. (2013). Mesoporous germanium morphology transformation for lift-off process andsubstrate re-use. Applied Physics Letter 102 011915. (Published).
  • Wilkins M, Boucherif A, Beal R, Haysom J.E, Wheeldon J.F, Aimez V, Arès R, Hall .J, Hinzer K. (2013). Multijunction Solar Cells using Silicon Bottom Subcell and Porous SiliconCompliant Membrane. IEEE Photovoltaics 3 (3), 1125 - 1131. (Published).
  • Paquette B*, DeVita M, Turala A, Kolhatkar G, Boucherif A, Jaouad A, Aimez V, Arès R. (2013). Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions. Journal of Crystal Growth 374 1-4. (Published).
  • Boucherif A, Blanchard N.P, Regreny P, Marty O, Guillot G, Grenet G, Lysenko V. (2010). Straining of SiGeultra-thin films with meso-porous Si substrates. Applied Physics Letter 97 131910. (Published).
  • Boucherif A, Blanchard N.P, Regreny P, Marty O, Guillot G, Grenet G, Lysenko V. (2010). Tensile strainengineering of Si thin films using porous Si substrates. Thin Solid Films 518 2466–2469. (Published).
  • Lysenko V, Ostapenko D, Bluet J.M, Regregny P, Mermoux M, Boucherif A, Marty M, Grenet G, Skryshevsky V, Guillot G. (2009). Straining of crystalline silicon thin films by stress generating bulk porous silicon substrates. Physica Status Solidi (A) 206 1255-1258. (Published).
  • Boucherif A, Ban D, Luo H, Dupont E, Liu H.C, Wasilewski R.Z, Paltiel Y. (2008). InAsSb basedmid-infrared optical upconversion devices. IEE Electron Letters 44 312-313. (Published).
  • Fathololoumi S, Ban D, Luo H, Dupont E, Laframboise S.R, Boucherif A, Liu H.C. (2008). Thermal behavior investigation of terahertz quantum cascade lasers. IEEE Journal of Quantum Electronics 44 1139-1144. (Published).

Chapitres de livre

  • N.P. Blanchard, A. Boucherif, P. Regreny, A. Danescu, H. Magoariec, O. Marty, J. Penuelas, G. Guillot, V. Lysenko and G. Grenet. (2011). Engineering pseudosubstrates with porous silicon technology. Semiconductor-On-Insulator Materials for NanoElectronics Applications (Springer, 45-65). Springer. (Published).

Articles de journaux

  • S. Tutashkonko, A. Boucherif, T. Nychyporuk, A. Kaminski-Cachopo, R. Arès, M. Lemiti, V. Aimez. (2013). Mesoporous Germanium formed by bipolar electrochemical etching. Electrochimica Acta. 256.
  • M. Wilkins, A. Boucherif, R. Beal, J. E. Haysom, J. F. Wheeldon, V. Aimez, R. Arès,T. J. Hall, K. Hinzer. (2013). Multijunction Solar Cells using Silicon Bottom Subcell and Porous Silicon Compliant Membrane. IEEE Photovoltaics.
  • B. Paquette, M. DeVita, A. Turala, G. Kolhatkar, A. Boucherif, A. Jaouad, V. Aimez,and R. Arès. (2013). Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions. Journal of Crystal Growth.
  • A. Boucherif, G. Beaudin, V. Aimez, and R. Arès. (2012). Mesoporous germanium morphology transformation for lift-off process and substrate re-use. Appl. Phys. Lett. 01191.
  • A. Boucherif, N.P. Blanchard, P. Regreny, O. Marty, G. Guillot, G. Grenet, and V. Lysenko. (2010). Straining of SiGe ultra-thin films with meso-porous Si substrates. Appl. Phys. Lett. 97.
  • A. Boucherif, N.P. Blanchard, P. Regreny, O. Marty, G. Guillot, G. Grenet, and V. Lysenko. (2010). Tensile strain engineering of Si thin films using porous Si substrates. Thin Solid Films. 2466.
  • V. Lysenko, D. Ostapenko, J. M. Bluet, P. Regregny, M. Mermoux, A. Boucherif, O. Marty, G. Grenet, V. Skryshevsky, and G. Guillot. (2009). Straining of crystalline silicon thin films by stress generating bulk porous silicon substrates. Phys. Stat Sol. 1255.
  • A. Boucherif, D. Ban, H. Luo, E. Dupont, H. C. Liu, Z. R. Wasilewski, Y. Paltiel. (2008). InAsSb based mid-infrared optical upconversion devices. IEE Electron Letters. 312.
  • S. Fathololoumi, D. Ban, H. Luo, E. Dupont, S. R. Laframboise, A. Boucherif, H. C. Liu. (2008). Thermal behavior investigation of terahertz quantum cascade lasers. IEEE Journal of Quantum Electronics. 1139.

Articles de conférence

  • Colin C*, Jaouad A, Darnon M, De Lafontaine* M, Volatier M, Boucherif A, Arès R, Fafard S, Aimez V. (2017). The handling of thin substrates and its potential for new architectures in multi-junction solar cells technology. AIP Conference Proceedings. 040001. (Published).
  • Boucherif, Abderrahim Rahim and Rondeau, Maxime and Pelletier, Hubert and Provost, Philippe-Olivier and Boucherif, Abderraouf and Dubuc, Christian and Maher, Hassan and Ar{\`e}s, Richard. (2016). Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors. Journal of Vacuum Science \& Technology B, 02L116. (Published).
  • Cheriton, Ross Wilkins, Matthew M. Sharma, Pratibha Valdivia, Christopher E. Trojnar, Anna H. Schriemer, Henry Hinzer, Karin Gupta, James Bouzazi, Boussairi Kolhatkar, Gitanjali Boucherif, Abderraouf Jaouad, Abdelatif Fafard, Simon Aimez, Vincent Arès, Richard. (2015). Design optimizations of InGaAsN(Sb) subcells for concentrator photovoltaic systems. Journal of Vacuum Science & Technology B, (Published).
  • Paquette B, DeVita M, Turala, A and Kolhatkar G, Boucherif, A, Jaouad A, Wilkins M, Wheeldon JF, Walker AW, Hinzer K et. al. (2013). Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells. AIP conference proceedings, 48--52. (Published).

Propriétés intellectuelles

Patents

  • Mohammad REZA AZIZIYAN, Roxana Arvinte, Richard ARES, Abderraouf BOUCHERIF. METHODS FOR FABRICATION OF DETACHABLE III-V SOLAR CELLS ON ELECTROCHEMICALLY ENGINEERED GE SUBTRATES. 63/148,229. United States. (Pending).
  • Mohammad Reza Aziziyan, Abderraouf Boucherif. SILICON ANODE FOR LITHIUM ION BATTERIES. 63/124,907. United States. (Pending).
  • Youcef Bioud, Abderraouf Boucherif, Richard Arès. SUBSTRATES FOR OPTOELECTRONIC DEVICES AND METHODS OF MANUFACTURING SAME. 63/068,537. United States. (Pending).
  • Philippe-Olivier Provost, Abderraouf Boucherif. WAFER RECEIVER, ELECTROCHEMICAL POROSIFICATION APPARATUS AND METHOD USING SAME. US 63/248,594. United States. (Pending).

Autres contributions

Cours enseignés

  • Epitaxy / Genèse et caractérisation des couches minces. GMC 761. (2CR).
  • Microsturcture et Choix des matériaux.
  • Nano-characterization of semiconductors/ Nano-caractérisation des semi-conducteurs. GMC 760.
  • Physics Lab for engineers (electricity, electronics, optics, mechanics).

Gestion d'évènements

  • Organizer. (2020) Industry academia workshop within the framwork of the Porous germanium Efficient Epitaxial LayErRelease for low cost high performance III-V solar cells (PEELER). (Workshop).
  • co-organizer. (2019) Functional nanomaterials: joint uSherbrooke - uMontpellier 3 days workshop. (Workshop).

Activités de collaboration internationale

  • Member,. France. Laboratoire des Nanotechnologies et des Nanosystemes (LN2)I am an active member of the international joint unit between Canada (uSherbrooke) and France (CNRS) named: which is located at the 3IT. This gives me access to a large number of resources and expertise through the large CNRS network in France. I also participate since 2008 and every 2 years to the dedicated workshops which is an excellent opportunity for networking with researchers from europe and particularly from France.

Présentations

  • Boucherif, A. (2020). Towards cost effective III-V photovoltaics with advanced substrate engineering. Photonics West. San Francisco, United States
  • (2019). Enabling III-V photovoltaics on Silicon with nanoscale substrate engineering. European Material Research Society E-MRS. Warsaw, Poland
  • S. Sauze*, N. Semmar, A. Stolz, P. Brault, A. Boucherif, and R. Arès. (2019). Thermoelectric properties of thin films of Graphene-Mesoporous Semiconductor Nanocomposites. European conference on Thermoelectrics (ECT 2019). Limassol, Cyprus
  • (2019). Towards cost effective III-V photovoltaics with advanced substrate engineering. Photonics north. Quebec, Canada
  • Y. A. Bioud*, A. Boucherif, E. Paradis, A. Soltani, D. Drouin and R. Ares. (2018). DEFECT-FREE, HETERO-EPITAXY THROUGH ELECTROCHEMICAL ETCHING OF GERMANIUM FOR MULTIJUNCTION SOLAR CELLS. Porous semiconductor science and technology. Grande Motte, France
  • A. Dupuy*, J. Nava-Avendano, J. Veilleux, R. Ares, S. Fafard, A. Boucherif. (2018). Graphene - mesoporous germanium nanocomposite as anode for lithium-ion batteries. Porous Semiconductor Science and Technolgy. Grande Motte, France
  • S. Sauze*, A. Stolz, N. Semmar, G. Kolhatkar, A. Ruediger, A. Korinek, N. Braidy, S. Fafard, R. Ares, A. Boucherif. (2018). Graphene – mesoporous Si or Ge nanocomposites for thermoelectric applications. Porous Semiconductor Science and Technolgy. Grande Motte, France
  • (2018). Nanocomposites à base de graphène pour les applications en énergie. École Nationale Polytechnique. Algeria
  • D. J. Jubgang Fandio, S. Sauze, R. Ares, A. Boucherif, and D. Morris. (2018). Terahertz spectroscopy of graphene-mesoporous silicon nanocomposites. Porous Semiconductor Science and Technology. Grande Motte, France
  • Boucherif A, Sauze S*, Boucherif A R*, Dupuy A*, Kolhatkar A*, Ruediger A, Fafard S, Arès R. (2017). Combining graphene with 3D crystalline nanostructures: a new family of nanocomposites. Nanotoday. Hawaii, United States
  • Boucherif A, Sauze S*, Boucherif A R*, Dupuy A*, Kolhatkar A*, Ruediger A, Fafard S, Arès R. (2017). Graphene-porous semiconductor nanocomposites scalable synthesis for energy applications. NanoCanada. Montreal, Canada
  • Bioud Y, Boucherif A, Belarouci A, Paradis E, Fafard S, Aimez V, Drouin D, Arès R. (2016). Chemical composition of anodically formed p-type porous gaas in hf-based electrolyte. Porous semiconductors science and technology (PSST). Tarragona, Spain
  • Bioud Y*, Boucherif A, Belarouci A, Paradis E, Fafard S, Aimez V, Drouin D, Arès R. (2016). Synthesis of mesoporous Ge films by high frequency bipolar electrochemical etching. Porous semiconductors science and technology (PSST). Tarragona, Spain
  • Boucherif A, Kolhatkar G, Ruediger A, Arès R. (2016). Virtual substrates engineering with graphene coated porous Si for multijunction solar cells. Emerging Technologies Conference, (CMOSET). montreal, Canada
  • Boucherif A, Beaudin G, Aimez V, Arès R. (2015). Free standing Ge seed films by using nanoporous group IV semiconductors. North American MBE Conference 2015. Cancun, Mexico
  • Boucherif A, Jaouad A, Cheriton R, Han S, Wilkins M, Valdivia C, Haysom J, Hinzer K, Fafard S, Aimez V, Arès R. (2015). GaAs solar cells on Mesoporous Silicon templates. 11th International Conference on Concentrator Photovoltaic Systems (CPV11). Aix-les-Bains, France
  • Boucherif A, Fafard S, Aimez V, Arès R. (2015). Virtual substrates engineering using porous Si and Ge nanostructures. the 9th International Conference on Silicon Epitaxy. Montreal, Canada
  • Boucherif A, Aimez V, Arès R. (2014). Lift-off process of III-V multijunction solar cells by using porous Ge sacrificial layers. Next Generation Solar Photovoltaics Canada. montreal, Canada
  • Boucherif A. (2014). Nanostructures for advanced concentrated photovoltaics (CPV). Nanostructures for Sensing and Energy Conversion NaSEC’14. Algiers, Algeria
  • Zribi J, Boucherif A, Paquette B, Ilahi B, Morris D, Arès R. (2013). Chemical Beam Epitaxy gowth tuning of vertically stacked InAs/GaAs quantum dots for intermediate band solar cell. 9th International Conference on Concentrating Photovoltaic Systems. Miyazaki, Japan
  • Kolhatkar G, Boucherif A, Fafard S, Aimez V, Arès R. (2013). Morphology study of GaNAs and AlGaNAs grown by chemical beam epitaxy. 30th North American Molecular Beam Epitaxy Conference. Banf, Canada
  • Kolhatkar G, Boucherif A, Fafard S, Aimez V, Arès R. (2013). Morphology study of GaNAs and AlGaNAs grown by chemical beam epitaxy. 30th North American Molecular Beam Epitaxy Conference. Banf, Canada
  • Boucherif A, Aimez V, Arès R. (2013). Nanoheteroepitaxy of GaAs on nanoporous Si templates. 30th North American Molecular Beam Epitaxy Conference. Banf, Canada
  • Paquette B, Boucherif A, Aimez V, Arès R. (2013). Novel low current, low heat flux multijunction solar cell design to maximize concentration and reduce costs. 9th International Conference on Concentrating Photovoltaic Systems. Miyazaki, Japan
  • Boucherif A,Tutashkonko S, Nychyporuk T, Kaminski-Cachopo A, Lemiti M, Aimez V, Arès R. (2012). Epitaxial Growth of III-V Semiconductors on Porous Germanium for Layer Transfer Process of multijunction solar cells. 8th International Conference on Concentrating Photovoltaic Systems. Toledo, Spain
  • Tutashkonko S, Boucherif A, Nychyporuk T, Kaminski-Cachopo A, Arès R, Aimez V, Lemiti M. (2012). Structural and morphological study of mesoporous Germanium layers formed by bipolar electrochemical etching. The Electrochemical Society. Hawaii, United States
  • Boucherif A, Blanchard N, Regreny P, Danescu A, Magoarie H, Marty O, Penuelas J, Bluet J.M, Guillot G, Lysenko V, Grenet G. (2010). Engineering pseudosubstrates with porous silicon technology. Joint 6th SemOI Workshop & 1st Ukrainian-French SOI Seminar. Kieve, Ukraine
  • Boucherif A, Blanchard N, Regreny P, Marty O, Guillot G, Grenet G, Lysenko V. (2010). Stress generating porous silicon substrates: a new tool for lattice engineering of thin films. Porous Semiconductors Science and Technology Conference. Valencia, Spain
  • Boucherif A. (2010). Synthesis and applications of porous Si. Industrial seminar at SOITEC inc. Grenoble, France