Yann Beilliard

Financement

• Subvention. (Refusé). Collaborateur. Training innovation leaders in ADvanced Microelectronics for future InfoRmation tEchnologies - ADMIRE. Conseil de Recherches en Sciences Naturelles et Génie du Canada (CRSNG). Collaborative Research and Training Experience Program (CREATE). 1 000 000 $. (2021-2027)
• Subvention. (En cours d’évaluation). Collaborateur. Hardware implementation of spiking neural networks based on hybrid CMOS-memristors circuits for ultralow-power artificial intelligence at the edge. Fonds de recherche du Québec - Nature et technologies (FRQNT). 180 000 $. (2021-2024)
• Subvention. (Obtenu). Collaborateur. Advanced Manufacturing Toolkit for Quantum Sensing and Quantum Computing. Conseil de Recherches en Sciences Naturelles et Génie du Canada (CRSNG). Oxford Instruments Nanotech Tools Ltd.. Call for joint Canada-UK projects on Quantum Technologies (QT). 400 000 $. (2020-2023)
• Subvention. (Obtenu). Collaborateur. Towards Large-Scale Quantum Systems: Memristor-Based Neuromorphic Circuits for Electronic Regime Recognition & Quantum State Tomography of Silicon Qubits. Conseil de Recherches en Sciences Naturelles et Génie du Canada (CRSNG). Canada First Research Excellence Fund - Quantum Programs Call for Projects. 237 000 $. (2019-2021)

Publications

Articles de revue

• Beilliard Y, Paquette F*, Brousseau F, Ecoffey S, Alibart F and Drouin D. (2020). Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories. IOP Nanotechnology (Article publié).
• Amirsoleimani A, Alibart F, Yon V*, Xu J, Pazhouhandeh M R, Ecoffey S, Beilliard Y, Genov R and Drouin D. (2020). In-Memory Vector-Matrix Multiplication in Monolithic CMOS-Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives. WILEY Advanced Intelligent Systems (Article publié).
• Beilliard Y, Paquette F*, Brousseau F, Ecoffey S, Alibart F and Drouin D. (2020). Investigation of resistive switching and transport mechanisms of Al2O3/TiO2-x memristors under cryogenic conditions (1.5 K). AIP Advances 10 (2), DOI. (Article publié).
• Labalette M, Jeannot S, Blonkowski S, Beilliard Y, Ecoffey S, Souifi A and Drouin D. (2017). Fabrication of Planar Back End of Line Compatible HfOx Complementary Resistive Switches. IEEE Transactions on Nanotechnology (TNANO) 16 (5), DOI. (Article publié).
• Beilliard Y, Estevez R, Parry G, McGarry P, Di Cioccio L and Coudrain P. (2017). Thermo-mechanical finite element simulations of Cu-SiO2 direct bonding with dishing effect. ELSEVIER International Journal of Solids and Structures 117 208-220. DOI. (Article publié).

Chapitres de livre

• Di Cioccio L, Moreau S, Sanchez L, Baudin F, Gueguen P, Mermoz S, Beilliard Y and Taibi R. (2014). Cu–SiO2 Hybrid Bonding. WILEY Handbook of 3D Integration (2014, 295-311). Wiley. DOI. (Article publié).

Articles de conférence

• Martinez P-Y, Beilliard Y, Godard M, Danovitch D, Drouin D, Charbonnier J, Coudrain P, Garnier A, Lattard D, Vivet P, Cheramy S, Guthmuller E, Fuguet Tortolero C, Mengue V, Durupt J, Philippe A and Dutoit D. (2020). ExaNoDe: combined integration of chiplets on active interposer with bare dice in a multi-chip-module for heterogeneous and scalable high performance compute nodes. Symposia on VLSI Technology and Circuits. (Article accepté).
• Beilliard Y, Godard M, Ioannou A, Damianakis A, Ligerakis M, Mavroidis I, Martinez P-Y, Danovitch D, Sylvestre J and Drouin D. (2019). FPGA-based Multi-Chip Module for High-Performance Computing. HiPEAC 2019 - ExaNoDe Workshop. (Article accepté).
• Beilliard Y, Paquette F*, Brousseau F, Ecoffey S, Alibart F and Drouin D. (2019). x Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-Memristors at Cryogenic Temperature (1.5 K). IEEE Nanotechnology Materials and Devices Conference (NMDC). (Article accepté).
• Beilliard Y, Paquette F*, Brousseau F, Ecoffey S, Alibart F and Drouin D. (2019). xStudy of Al2O3/TiO2- Memristors at CryogenicTemperature (1.5 K) for Silicon Quantum Dots Co-integration. Silicon Quantum Electronics Workshop (SiQEW). (Article accepté).
• Lafage V, Beilliard Y, Sridhar A, Brunschwiler T and Drouin D. (2018). Fabrication & modelisation of 2D magnetic inductorsfor DC-DC converters on glass interposer. IEEE 68th Electronic Components and Technology Conference (ECTC). DOI. (Article publié).
• Lafage V, Beilliard Y, Sridhar A, Brunschwiler T and Drouin D. (2018). Fabrication of 2D and 3D inductors for DC-DC convertersintegrated on glass interposer. IEEE Pan Pacific Microelectronics Symposium (PanPac). DOI. (Article publié).
• Labalette M, Beilliard Y, Goulet-Soucy T, Ecoffey S, Jeannot S, Souifi A and Drouin D. (2017). Planar HfOx ReRAM in CMOS BEOL using nanodamascene process. Journées Nationales sur les Technologies Emergentes en micro-nanofabrication (JNTE). (Article accepté).
• Estevez R, Beilliard Y, Parry G, McGarry P, Coudrain P and Di Cioccio L. (2016). Thermomechanical Finite Element Modeling of Cu-SiO2 Direct Hybrid Bonding with a Dishing Effect on Cu Surfaces. ECS PRiME Meeting. (Article publié).
• Moreau S, Beilliard Y, Coudrain P, Bouchu D, Di Cioccio L and Arnaud L. (2015). Electromigration in hybrid bonding interconnects for 3-D IC impact of the diffusion barrier. IEEE 17th Electronics Packaging and Technology Conference (EPTC). DOI. (Article publié).
• Benaissa L, Di Cioccio L, Beilliard Y, Coudrain P, Domínguez S, Balan V, Enot T, Imbert B, Millet L and Chevobbe S. (2015). Next generation image sensor via direct hybrid bonding. IEEE 17th Electronics Packaging and Technology Conference (EPTC). DOI. (Article publié).
• Beilliard Y, Di Cioccio L, Coudrain P, Moreau S, Jouneau P-H, Romano G, Nowodzinski A, Rolland E, Estevez R, Parry G and Signamarcheix T. (2014). Advances towards reliable high-density Cu-Cu interconnects by Cu-SiO2 direct hybrid bonding. IEEE 3D Systems Integration Conference (3DIC). DOI. (Article publié).
• Di Cioccio L, Beilliard Y, Mermoz S, Estevez R, Coudrain P, Moreau S and Widiez J. (2014). Low temperature metal bonding for 3D and power device packaging. IEEE Low Temperature Bonding for 3D Integration (LTB-3D). DOI. (Article publié).
• Moreau S, Beilliard Y, Coudrain P, Bouchu D, Taibi R and Di Cioccio L. (2014). Mass transport-induced failure in direct copper (Cu) bonding interconnects for 3D integration. IEEE 52nd International Reliability Physics Symposium (IRPS). DOI. (Article publié).
• Y. Beilliard, L. Di Cioccio, P. Coudrain, S. Moreau, L. Sanchez, B. Montmayeul, T. Signamarcheix, R. Estevez and G. Parry. (2013). Chip-to-wafer copper direct bonding electrical characterization and thermal cycling. IEEE 3D Systems Integration Conference (3DIC). DOI. (Article publié).
• Y. Beilliard, L. Di Cioccio, P. Coudrain, T. Signamarcheix and R. Estevez. (2013). Die-to-wafer copper direct bonding electrical characterization. Journées Nationales sur les Technologies Emergentes en micro-nanofabrication (JNTE). (Article accepté).
• J.-P. Colonna, R. Segaud, F. Marion, M. Volpert, A. Garnier, L. Di Cioccio, Y. Beilliard, S. Mermoz, F. De Crécy, C. Laviron and S. Chéramy. (2013). Towards alternative technologies for fine pitch interconnects. IEEE 63rd Electronic Components and Technology Conference (ECTC). DOI. (Article publié).

Propriétés intellectuelles

Brevets

• Lhostis S, Kokshagina O, Beilliard Y, Fiori V. Device comprising a three-dimensional integrated structure with simplified thermal dissipation, and corresponding fabrication method. US9449896B2. États-Unis. (Accordé).
• Di Cioccio L, Beilliard Y. Improved method for assembly by direct bonding between two elements, each element comprising portions of metal and dielectric materials. FR3011679B1. France. (Accordé).
• Di Cioccio L, Beilliard Y, Coudrain P. Procede de realisation d'un circuit integre par collage direct de substrats comprenant en surface des portions de cuivre et de materiau dielectrique. FR3025051A1. France. (Retiré).
• Bar P, Gousseau S, Beilliard Y. Process for producing at least one through-silicon via with improved heat dissipation, and corresponding three-dimensional integrated structure. US9165861B2. États-Unis. (Accordé).

Autres contributions

Activités de collaboration internationale

• Profs. Marc Bocquet and Jean-Michel Portal from IM2NP. France.
• Prof. Hélène Fremont from IMS Bordeaux. France.
• CEA-Leti. France.

Présentations

• (2019). FPGA-based Multi-Chip Module for High-Performance Computing. HiPEAC 2019 - ExaNoDe Workshop. Valencia, Espagne