Serge Ecoffey

Publications

Articles

• Raphael Gherman, Sacha Schwarz, Jean-François Bryche, Guillaume Beaudin, Alex Currie, Pierre Levesque, François Fillion-Gourdeau, Steve G. MacLean, Dominique Drouin, Serge Ecoffey, Paul G. Charette. (2025). A comprehensive study of plasmonic mode hybridization in gold nanoparticle-over-mirror (NPoM) arrays. Nanophotonics. DOI
• Cecile Berne, Catherine Marsan-Loyer, Lucien E. Weiss, Yves Brun, David Danovitch, David Gendron, Serge Ecoffey. (2025). Sticking to Green: Sustainable Solutions for Next-Generation Microelectronic Packaging with Plant-Derived and Bacterial Adhesives. ACS Sustainable Chemistry & Engineering. DOI
• Dorian Coffineau, Nicolas Gariépy, Benoit Manchon, Raphael Dawant, Abdelatif Jaouad, Étienne Grondin, Serge Ecoffey, Fabien Alibart, Yann Beilliard, Andreas Ruediger, Dominique Drouin. (2024). CMOS-compatible Hf0.5Zr0.5O2-based ferroelectric memory crosspoints fabricated with damascene process. Nanotechnology. DOI
• Adham Elshaer, Serge Ecoffey, Abdelatif Jaouad, Stephane Monfray, Dominique Drouin. (2024). CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD–Aluminum Oxide. Sensors. DOI
• Raphael Gherman, Guillaume Beaudin, Romain Stricher, Jean-François Bryche, Pierre Levesque, François Fillion-Gourdeau, Steve G. MacLean, Dominique Drouin, Paul G. Charette, Serge Ecoffey. (2024). Abrasive-free chemical-mechanical planarization (CMP) of gold for thin film nano-patterning. Nanoscale. DOI
• Pierre-Antoine Mouny, Raphaël Dawant, Bastien Galaup, Serge Ecoffey, Michel Pioro-Ladrière, Yann Beilliard, Dominique Drouin. (2023). Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming. Applied Physics Letters. DOI
• Pierre-Antoine Mouny, Yann Beilliard, Sébastien Graveline, Marc-Antoine Roux, Abdelouadoud El Mesoudy, Raphaël Dawant, Pierre Gliech, Serge Ecoffey, Fabien Alibart, Michel Pioro-Ladrière, Dominique Drouin. (2023). Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control. IEEE Transactions on Electron Devices. DOI
• Abdelouadoud El Mesoudy, Denis Machon, Andreas Ruediger, Abdelatif Jaouad, Fabien Alibart, Serge Ecoffey, Dominique Drouin. (2023). Band gap narrowing induced by oxygen vacancies in reactively sputtered TiO2 thin films. Thin Solid Films. DOI
• R. Dawant, S. Ecoffey, D. Drouin. (2022). Multiple material stack grayscale patterning using electron-beam lithography and a single plasma etching step. Journal of Vacuum Science & Technology B. DOI
• Mark Ferguson, Mohamed Najah, Frédéric Banville, Mohamed Boucherit, Naresh Miriyala, Jacques Renaud, Luc Fréchette, François Boone, Serge Ecoffey, Serge A. Charlebois. (2022). Mitigating Re-Entrant Etch Profile Undercut in Au Etch with an Aqua Regia Variant. Journal of The Electrochemical Society. DOI
• Tony Liu, Amirali Amirsoleimani, Jianxiong Xu, Fabien Alibart, Yann Beilliard, Serge Ecoffey, Dominique Drouin, Roman Genov. (2022). CODEX: Stochastic Encoding Method to Relax Resistive Crossbar Accelerator Design Requirements. IEEE Transactions on Circuits and Systems II: Express Briefs. DOI
• Mohamed Najah, Serge Ecoffey, Tejinder Singh, Mark Ferguson, Louis-Philippe Roby, Jacques Renaud, Paul Gondcharton, Frederic A. Banville, Mohamed Boucherit, Serge A. Charlebois, Luc G. Frechette, Raafat R. Mansour, Francois Boone. (2022). Characterization of a Wafer-Level Packaged Au−Ru/AlCu Contact for Micro-Switches. Journal of Microelectromechanical Systems. DOI
• Mark Ferguson, Mohamed Najah, Frederic A. Banville, Mohamed Boucherit, Paul Gond-Charton, Jacques Renaud, Luc Frechette, Francois Boone, Serge Ecoffey, Serge A. Charlebois. (2022). Exploring Ru Compatibility With Al-Ge Eutectic Wafer Bonding. Journal of Microelectromechanical Systems. DOI
• Raphaël Dawant, Robyn Seils, Serge Ecoffey, Rainer. Schmid, Dominique Drouin. (2022). Hybrid cross correlation and line-scan alignment strategy for CMOS chips electron-beam lithography processing. Journal of Vacuum Science & Technology B. DOI
• El Mesoudy, A., Lamri, G., Dawant, R., Arias-Zapata, J., Gliech, P., Beilliard, Y., Ecoffey, S., Ruediger, A., Alibart, F., Drouin, D. (2022). Fully CMOS-compatible passive TiO₂-based memristor crossbars for in-memory computing. Microelectronic Engineering. DOI
• Najah, M., Maaboudallah, F., Boucherit, M., Ferguson, M., Fréchette, L., Charlebois, S., Boone, F., Ecoffey, S. (2022). Spectral analysis of the topography parameters for isotropic Gaussian rough surfaces applied to gold coating. Tribology International. DOI
• (2021). Modeling current and voltage peaks generation in complementary resistive switching devices. Solid-State Electronics. DOI
• Romain Stricher, Paul Gond-Charton, Amrid Amnache, Jose Francisco Ambia Campos, Luc Frechette, Dominique Drouin, Serge Ecoffey. (2021). In Situ Doped Polysilicon (ISDP) Hydrophilic Direct Wafer Bonding for MEMS Applications. ECS Journal of Solid State Science and Technology. DOI
• Tony Liu, Amirali Amirsoleimani, Fabien Alibart, Serge Ecoffey, Dominique Drouin, Roman Genov. (2021). AIDX: Adaptive Inference Scheme to Mitigate State-Drift in Memristive VMM Accelerators. IEEE Transactions on Circuits and Systems II: Express Briefs. DOI
• Amirali Amirsoleimani, Fabien Alibart, Victor Yon, Jianxiong Xu, M. Reza Pazhouhandeh, Serge Ecoffey, Yann Beilliard, Roman Genov, Dominique Drouin. (2020). In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives. Advanced Intelligent Systems. DOI
• Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, Fabien Alibart, Dominique Drouin. (2020). Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K). AIP Advances. DOI
• Merhej, M., Ecoffey, S., Sadani, B., Lee–Sang, B., Baron, T., David, S., Drouin, D., Salem, B. (2020). A fabrication process for self-connected horizontal SiGe nanowires. Microelectronic Engineering. DOI
• Beilliard, Y., Paquette, F., Brousseau, F., Ecoffey, S., Alibart, F., Drouin, D. (2020). Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al₂O₃/TiO₂resistive memories. Nanotechnology. DOI
• Beilliard, Y., Paquette, F., Brousseau, F., Ecoffey, S., Alibart, F., Drouin, D. (2020). Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al₂O₃/TiO₂ resistive memories (Nanotechnology (2020) 31 (445205) DOI: 10.1088/1361-6528/aba6b4). Nanotechnology. DOI
• Bonafos, C., Benassayag, G., Cours, R., Pécassou, B., Guenery, P.V., Baboux, N., Militaru, L., Souifi, A., Cossec, E., Hamga, K., Ecoffey, S., Drouin, D. (2018). Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories. Materials Research Express. DOI
• Getenet Tesega Ayele, Stephane Monfray, Serge Ecoffey, Frederic Boeuf, Jean-Pierre Cloarec, Dominique Drouin, Abdelkader Souifi. (2018). Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI. IEEE Journal of the Electron Devices Society. DOI
• Dominique Drouin, Gabriel Droulers, Marina Labalette, Bruno Lee Sang, Patrick Harvey-Collard, Abdelkader Souifi, Simon Jeannot, Stephane Monfray, Michel Pioro-Ladriere, Serge Ecoffey. (2017). A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions. Journal of Nanomaterials. DOI
• Labalette, M., Jeannot, S., Blonkowski, S., Beilliard, Y., Ecoffey, S., Souifi, A., Drouin, D. (2017). Fabrication of Planar Back End of Line Compatible HfO_x Complementary Resistive Switches. IEEE Transactions on Nanotechnology. DOI
• Merhej, M., Drouin, D., Salem, B., Baron, T., Ecoffey, S. (2017). Fabrication of top-down gold nanostructures using a damascene process. Microelectronic Engineering. DOI
• Droulers, G., Ecoffey, S., Pioro-Ladrière, M., Drouin, D. (2017). Metallic Single Electron Transistors: Impact of Parasitic Capacitances on Small Circuits. IEEE Transactions on Electron Devices. DOI
• Droulers, G., Ecoffey, S., Drouin, D., Pioro-Ladrière, M. (2016). Effects of aging on nanoscale planar metal-insulator-metal tunnel junctions. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. DOI
• Ayadi, Y., Rahhal, L., Vilquin, B., Chevalier, C., Ambriz Vargas, F., Ecoffey, S., Ruediger, A., Sarkissian, A., Monfray, S., Cloarec, J.-P., Drouin, D., Souifi, A. (2016). Novel Concept of Gas Sensitivity Characterization of Materials Suited for Implementation in FET-Based Gas Sensors. Nanoscale Research Letters. DOI
• Lee Sang, B., Gour, M.-J., Darnon, M., Ecoffey, S., Jaouad, A., Sadani, B., Drouin, D., Souifi, A. (2016). Selective dry etching of TiN nanostructures over SiO₂ nanotrenches using a Cl₂/Ar/N₂ inductively coupled plasma. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. DOI
• Lee Sang, B., Gour, M.-J., Jaouad, A., Ecoffey, S., Darnon, M., Sadani, B., Souifi, A., Drouin, D. (2015). Inductively coupled plasma etching of ultra-shallow Si₃N₄ nanostructures using SF₆/C₄F₈ chemistry. Microelectronic Engineering. DOI
• El Hajjam, K.G., Bounouar, M.A., Baboux, N., Ecoffey, S., Guilmain, M., Puyoo, E., Francis, L.A., Souifi, A., Drouin, D., Calmon, F. (2015). Tunnel junction engineering for optimized metallic single-electron transistor. IEEE Transactions on Electron Devices. DOI
• El Hajjam, K., Baboux, N., Calmon, F., Souifi, A., Poncelet, O., Francis, L.A., Ecoffey, S., Drouin, D. (2014). Highly transparent low capacitance plasma enhanced atomic layer deposition Al₂O₃-HfO₂ tunnel junction engineering. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. DOI
• Guilmain, M., Labbaye, T., Dellenbach, F., Nauenheim, C., Drouin, D., Ecoffey, S. (2013). A damascene platform for controlled ultra-thin nanowire fabrication. Nanotechnology. DOI
• Jouvet, N., Bounouar, M.A., Ecoffey, S., Nauenheim, C., Beaumont, A., Monfray, S., Ruediger, A., Calmon, F., Souifi, A., Drouin, D. (2012). Recent developments on 3D integration of metallic set onto CMOS process for memory application. International Journal of Nanoscience. DOI
• Guilmain, M., Jaouad, A., Ecoffey, S., Drouin, D. (2011). SiO₂ shallow nanostructures ICP etching using ZEP electroresist. Microelectronic Engineering. DOI
• Ecoffey, S., Guilmain, M., Morissette, J.-F., Bourque, F., Pont, J., Sang, B.L., Drouin, D. (2011). Technology platform for the fabrication of titanium nanostructures. Journal of Vacuum Science and Technology B. DOI
• Ecoffey, S., Bouvet, D., Mahapatra, S., Reimbold, G., Ionescu, A.M. (2006). Electrical conduction in 10 nm thin polysilicon wires from 4 to 400 K and their operation for hybrid memory. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. DOI
• Ecoffey, S., Pott, V., Mahapatra, S., Bouvet, D., Fazan, P., Ionescu, A.M. (2005). A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires. Microelectronic Engineering. DOI
• Santinacci, L., Djenizian, T., Hildebrand, H., Ecoffey, S., Mokdad, H., Campanella, T., Schmuki, P. (2003). Selective palladium electrochemical deposition onto AFM-scratched silicon surfaces. Electrochimica Acta. DOI
• Ecoffey, S., Bouvet, D., Ionescu, A.M., Fazan, P. (2002). Low-pressure chemical vapour deposition of nanograin polysilicon ultra-thin films. Nanotechnology. DOI

Articles de conférence

• (2021). III-V/Ge Multijunction Solar Cell with Through Cell Via Contact Fabrication and Characterization. 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). DOI
• Bioud, Y.A., Beattie, M.N., Boucherif, A., Jellit, M., Stricher, R., Ecoffey, S., Patriarche, G., Troadec, D., Soltani, A., Braidy, N., Wilkins, M., Valdivia, C.E., Hinzer, K., Drouin, D., Arès, R. (2019). A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon. Proceedings of SPIE - The International Society for Optical Engineering. DOI
• Ayele, G.T., Monfray, S., Ecoffey, S., Boeuf, F., Cloarec, J.-P., Drouin, D., Souifi, A. (2019). Highly Performant Integrated pH-Sensor Using the Gate Protection Diode in the BEOL of Industrial FDSOI. Technical Digest - International Electron Devices Meeting, IEDM. DOI
• Maalaoui, A., Frenea-Robin, M., Genest, J., Ecoffey, S., Beauvais, J., Charette, P., Drouin, D., Cloarec, J.-P. (2018). Towards miniaturized pH sensor based on carbon nanotubes assembled by DEP on titanium electrodes?. Proceedings of the IEEE International Conference on Industrial Technology. DOI
• Ayele, G.T., Monfray, S., Ecoffey, S., Boeuf, F., Bon, R., Cloarec, J.-P., Drouin, D., Souifi, A. (2018). Ultrahigh-sensitive and CMOS compatible ISFET developed in BEOL of industrial UTBB FDSOI. Digest of Technical Papers - Symposium on VLSI Technology. DOI
• Ayele, G.T., Monfray, S., Boeuf, F., Cloarec, J.-P., Ecoffey, S., Drouin, D., Puyoo, E., Souifi, A. (2017). Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor. European Solid-State Device Research Conference. DOI
• Droulers, G., Ecoffey, S., Drouin, D., Pioro-Ladriere, M. (2016). A manufacturable process for single electron charge detection, a step towards quantum computing. European Solid-State Device Research Conference. DOI
• Labalette, M., Ecoffey, S., Jeannot, S., Souifi, A., Drouin, D. (2016). HfO_x complementary resistive switches. Nanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings. DOI
• Drouin, D., A-Bounouar, M., Droulers, G., Labalette, M., Pioro-Ladriere, M., Souifi, A., Ecoffey, S. (2015). 3D microelectronic with BEOL compatible devices. Proceedings of the IEEE VLSI Test Symposium. DOI
• Drouin, D., Droulers, G., Labalette, M., Sang, B.L., Harvey-Collard, P., Richard, J.-P., Pioro-Ladriere, M., Ecoffey, S., Souifi, A., Monfray, S. (2015). The nanodamascene process: A versatile fabrication technique for nanoelectronic applications. IEEE-NANO 2015 - 15th International Conference on Nanotechnology. DOI
• Droulers, G., Ecoffey, S., Guilmain, M., Souifi, A., Pioro-Ladriere, M., Drouin, D. (2014). Damascene planar metal-insulator-metal tunnel junctions. Proceedings of the IEEE Conference on Nanotechnology. DOI
• Griveau, D., Ecoffey, S., Parekh, R.M., Bounouar, M.A., Calmon, F., Beauvais, J., Drouin, D. (2012). Single electron CMOS-like one bit full adder. 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012. DOI
• Bounouar, M.A., Calmon, F., Beaumont, A., Guilmain, M., Xuan, W., Ecoffey, S., Drouin, D. (2011). Single Electron Transistor analytical model for hybrid circuit design. 2011 IEEE 9th International New Circuits and Systems Conference, NEWCAS 2011. DOI
• Ecoffey, S., Morissette, J.-F., Jedidi, N., Guilmain, M., Nauenheim, C., Drouin, D. (2011). Ultrathin titanium passive devices fabrication. Proceedings of the IEEE Conference on Nanotechnology. DOI
• Ecoffey, S., Mazza, M., Pott, V., Bouvet, D., Schmid, A., Leblebici, Y., Declercq, M.J., Ionescu, A.M. (2005). A new logic family based on hybrid MOSFET-polysilicon nanowires. Technical Digest - International Electron Devices Meeting, IEDM. DOI
• Ecoffey, S., Bouvet, D., Reimbold, G., Ionescu, A.M. (2005). Electrical conduction in 10nm-thin polysilicon wires from 4K to 400K and their operation for hybrid memory. Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference. DOI
• Ecoffey, S., Pott, V., Bouvet, D., Leblebici, Y., Declercq, M., Ionescu, A.M. (2005). Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements. Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05. DOI
• Ecoffey, S., Pott, V., Bouvet, D., Mazza, M., Mahapatra, S., Schmid, A., Leblebici, Y., Declercq, M.J., Ionescu, A.M. (2005). Nano-wires for room temperature operated hybrid CMOS-NANO integrated circuits. Digest of Technical Papers - IEEE International Solid-State Circuits Conference.
• Ecoffey, S., Pott, V., Bouvet, D., Mazza, M., Mahapatra, S., Schmid, A., Leblebici, Y., Declercq, M.J., Ionescu, A.M. (2005). Nano-wires for room-temperature-operated hybrid CMOS-nano integrated circuits. Digest of Technical Papers - IEEE International Solid-State Circuits Conference.
• Ionescu, A.M., Pott, V., Ecoffey, S., Mahapatra, S., Moselund, K., Dainesi, P., Buchheit, K., Mazza, M. (2004). Emerging nanoelectronics: Multi-functional nanowires. Proceedings of the International Semiconductor Conference, CAS.
• Badila, D., Ecoffey, S., Bouvet, D., Ionescu, A.M. (2003). A study of fabrication techniques for sub-10nm thin undulated polysilicon films. Proceedings of the International Semiconductor Conference, CAS. DOI
• Ecoffey, S., Bouvet, D., Fazan, P., Tringe, J.W., Ionescu, A.M. (2003). Novel technique for nanograin ultra-thin polysilicon film deposition and implantation. Proceedings of the International Semiconductor Conference, CAS. DOI
• Mahapatra, S., Pott, V., Ecoffey, S., Schmid, A., Wasshuber, C., Tringe, J.W., Leblebici, Y., Declercq, M., Banerjee, K., Ionescu, A.M. (2003). SETMOS: A Novel True Hybrid SET- CMOS High Current Coulomb Blockade Oscillation Cell for Future Nano-Scale Analog ICs. Technical Digest - International Electron Devices Meeting.
• Ecoffey, S., Bouvet, D., Ionescu, A.M., Fazan, P. (2002). LPCVD deposition techniques for nanograin sub-10 nm polysilicon ultra-thin films. Materials Research Society Symposium - Proceedings.

Autres contributions

Divers

• Ferguson, M., Najah, M., Banville, F.A., Boucherit, M., Gond-Charton, P., Renaud, J., Fréchette, L., Boone, F., Ecoffey, S., Charlebois, S.A. (2022). Exploring Ru compatibility with Al-Ge eutectic wafer bonding. TechRxiv.
• Mouny, P.-A., Beilliard, Y., Graveline, S., Roux, M.-A., Mesoudy, A.E., Dawant, R., Gliech, P., Ecoffey, S., Alibart, F., Pioro-Ladrière, M., Drouin, D. (2022). Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control. arXiv.
• Ferguson, M., Najah, M., Banville, F., Boucherit, M., Miriyala, N., Renaud, J., Fréchette, L., Boone, F., Ecoffey, S., Charlebois, S.A. (2022). Mitigating re-entrant etch profile undercut in Au etch with an aqua regia variant. TechRxiv.
• Amirsoleimani, A., Liu, T., Xu, J., Alibart, F., Beilliard, Y., Ecoffey, S., Drouin, D., Genov, R. (2021). CODEX: Stochastic encoding method to relax resistive crossbar accelerator design requirements. TechRxiv.
• Mesoudy, A.E., Lamri, G., Dawant, R., Arias-Zapata, J., Gliech, P., Beilliard, Y., Ecoffey, S., Ruediger, A., Alibart, F., Drouin, D. (2021). Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing. arXiv.
• Liu, T., Amirsoleimani, A., Alibart, F., Ecoffey, S., Drouin, D., Genov, R. (2020). AIDX: adaptive inference scheme to mitigate state-drift in memristive VMM accelerators. arXiv.
• Beilliard, Y., Paquette, F., Brousseau, F., Ecoffey, S., Alibart, F., Drouin, D. (2020). Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories. arXiv.
• Beilliard, Y., Paquette, F., Brousseau, F., Ecoffey, S., Alibart, F., Drouin, D. (2019). Observation of Highly Nonlinear Resistive Switching of Al₂O₃/TiO_2-x Memristors at Cryogenic Temperature (1.5 K). arXiv.