Fafard, Simon

Professeur associé, Faculté de génie
FAC. GÉNIE Électrique et informatique

Coordonnées

Courriel


819-821-8000, poste 66723

Diplômes

(1994) Post-doctorat. University of California, Santa Barbara.

(1992) Doctorat. Université d'Ottawa.

(1988) Baccalauréat. Université d'Ottawa.

Présentation

Sujets de recherche

Composition chimique, Énergie éolienne et solaire, Nanomatériaux.

Disciplines de recherche

Génie électrique et génie électronique, Physique.

Mots-clés

devices, epitaxy, heterostrocture, III-V, nanostructures, optoelectronic, photonics, photovoltaic, quantum dot, semiconductor.

Langues parlées et écrites

Anglais, Français

Prix et distinctions

  • Outstanding Clean Energy Award. (Prix / Récompense).
  • The 2009 Next 10. (Prix / Récompense).

Publications

Articles de revue

  • Y. A. Bioud, A. Boucherif, A. Belarouci, E. Paradis, S. Fafard, V. Aimez, D. Drouin, and R. Arès. (2015). Fast growth synthesis of mesoporous Ge films by high frequency bipolar electrochemical etching. ACS Chemistry of Materials, (Article soumis).
  • Matthew Wilkins, Christopher E. Valdivia, Ahmed M. Gabr, Denis Masson, Simon Fafard, and Karin Hinzer. (2015). Luminescent coupling in planar opto-electronic devices. Journal of applied Physics, 118(Oct. 2015), 143102-1-10. (Article publié).
  • M.C.A. York, F. Proulx, D. P. Masson, A. Jaouad, B. Bouzazi, R. Arès, J. Sylvestre, V. Aimez, and S. Fafard. (2015). Photocarrier properties in ultra-thin photovoltaic GaAs n/p junctions for vertical epitaxial heterostructure architectures. Solar Energy Materials and Solar Cells, (Article soumis).
  • D. P. Masson, F. Proulx, S. Fafard. (2015). Pushing the limits of concentrated photovoltaic solar cell tunnel junctions in novel high-efficiency GaAs phototransducers based on a vertical epitaxial heterostructure architecture. Progress in Photovoltaics, Oct 2015, (Article publié).
  • S. Fafard, M.C.A. York, F. Proulx, C.E. Valdivia, M.M. Wilkins, R. Arès, V. Aimez, K. Hinzer, and D.P. Masson. (2015). Ultra-High optical to electrical conversion efficiencies using a novel Vertical Epitaxial Heterostructure Architecture. SCIENCE, (Article soumis).
  • R.Cheriton, M.M. Wilkins, P. Sharma, C.E. Valdivia, A.H. Trojnar, H. Schriemer, K. Hinzer, J. Gupta, B. Bouzazi, G. Kolhatkar, A. Boucherif, A. Jaouad, V. Aimez, R. Arès, S. Fafard. (2015). Design Optimizations of InGaAsN(Sb) subcells for Concentrator Photovoltaic Systems. JVST B, (Article soumis).
  • G. Kolhatkar, A. Boucherif, Y. A. Bioud, S. Fafard, A. Ruediger, V. Aimez, and R. Arès. (2015). Electrical and structural properties of AlGaNAs alloys grown by CBE. Physica Status Solidi B, (Article soumis).
  • A. Boucherif, G. Beaudin, S. Fafard, V. Aimez, R. Ares. (2015). Releasable Ge seed films for III-V Materials epitaxy. Proceedings of North American MBE conference, (Article soumis).
  • O. Richard, A. Jaouad, B. Bouzazi, R. Ares, S. Fafard, V. Aimez. (2015). Simulation of a through cell vias contacts architecture for HCPV multi-junction solar cells. Solar energy materials and solar cells, (1 Jan 2016), (Article publié).
  • Mark C. A. York, Simon Fafard, Richard Arès, Vincent Aimez and Julien Sylvestre. (2015). An assessment of the performance of a parabolic trough heat collector with integrated III-V photovoltaic cells. Energy, (Article soumis).
  • C.E. Valdivia, M. Wilkins, B. Bouzazi, A. Jaouad, V. Aimez, R. Arès, D. P. Masson, S. Fafard, and K. Hinzer. (2015). Five-volt vertically-stacked, single-cell GaAs photonic power converter. SPIE OPTO, International Society for Optics and Photonics,, pp. 93580E-93580E. (Article publié).
  • G. Kolhatkar, G. Boucherif, C.E. Valdivia, S.G. Wallace, S. Fafard, V. Aimez, R. Ares. (2014). Growth optimization and optical properties of AlGaNAs alloys. Journal of Applied Physics, 115(16), 16513. (Article publié).
  • Kolhatkar G *,Boucherif A, Valdivia C, Wallace S, Fafard S, Aimez V, Arès R. (2013). Al-enhanced N incorporation in GaNAs alloys grown by chemical beam epitaxy. Journal of Crystal Growth, 380, 256-260. (Article publié).
  • Turala A *, Jaouad A, Masson D, Fafard S, Arès R, Aimez V. (2013). Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching. International Journal of Photoenergy, 2013(583867), 7 pages. (Article publié).
  • Miloszewski J *, Wartak M, Wallace S, Fafard S. (2013). Theoretical investigation of carrier capture and escape processes in cylindrical quantum dots. Journal of Applied Physics, 114(15), 154311. (Article publié).
  • Kolhatkar G *, Wheeldon J, Valdivia C, Walker A *, Fafard S, Turala A *, Jaouad A, Arès R, Aimez V, Hinzer K. (2012). Current-voltage measurements within the negative differential resistance region of AlGaAs/AlGaAs tunnel junctions for high concentration photovoltaics. International Journal of Nanoscience, 11(04), 6 pages. (Article publié).
  • Homier, R *, Jaouad A, Turala A *, Valdivia C, Masson D, Wallace S, Fafard S, Arès R, Aimez V. (2012). Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride. IEEE Journal of Photovoltaics, 2(3), 393 - 397. (Article publié).
  • Wheeldon J, Valdivia C, Walker A *, Kolhatkar G *, Jaouad A, Turala A *, Riel B, Masson D, Puetz N, Fafard S, Arès R, Aimez V, Hall T, Hinzer K. (2011). Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells. Progress in Photovoltaics: Research and Applications, 19(4), 442–452. (Article publié).

Chapitres de livre

  • S. Fafard. (2015). III-Vs and PV concentrator technologies - New and future III-V cells and concepts. PV from Fundamentals to Applications (1-9). Wiley. (Article soumis).

Articles de conférence

  • Karin Hinzer(1), Christopher E. Valdivia(1), Matthew M. Wilkins(1), Ross Cheriton(1), Pratibha Sharma(1), Anna H. Trojnar(1), Henry Schriemer(1), Boussairi Bouzazi(2), Gitanjali Kolhatkar(2), Abderraouf Boucherif(2), Abdelatif Jaouad(2), Simon Fafard(2), Vincent Aimez(2), Richard Arès(2) and James Gupta(3). (2015). Designs Optimisations for Concentrated Solar Systems Using Dilute Nitride Four-Junction Photovoltaics. CSSTC 2015. (Article sous presse).
  • Mark C. A. York, Simon Fafard, Julien Sylvestre, Richard Arès, and Vincent Aimez. (2015). The Integration of Photovoltaic Cells in a Parabolic Trough Heating System. PVSC Proceedings, (Article sous presse).
  • Karin Hinzer, Christopher E. Valdivia, Matthew M. Wilkins, Ross Cheriton, Pratibha Sharma, Anna H. Trojnar, Henry Schriemer SUNLAB, Centre for Research in Photonics University of Ottawa Ottawa, Canada khinzer@uottawa.ca Boussairi Bouzazi, Gitanjali Kolhatkar, Abderraouf Boucherif, Abdelatif Jaouad, Simon Fafard, Vincent Aimez, Richard Arès Laboratoire Nanotechnologies Nanosystèmes (LN2) - CNRS UMI-3463 Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke Sherbrooke, Canada James Gupta National Research Council Canada Ottawa, Canada. (2015). Designs optimisations for concentrated solar systems using dilute nitride four-junction photovoltaics. Proceedings Photonics North, (Article publié).
  • Patrick M. White1, Christopher E. Valdivia1, Mark Yandt1, Simon Fafard2, Karin Hinzer1, Henry P. Schriemer1. (2015). Multijunction Solar Cell Analysis With The Tunable Automated Subcell Characterization Unit. proceedings CPV11, (Article sous presse).
  • Mark C. A. York, Simon Fafard, Julien Sylvestre, Richard Arès, Vincent Aimez. (2015). Pushing the Limits of a Hybrid Thermal / PV System. 42th IEEE Photovoltaic Specialist Conference, (Article accepté).
  • Boussairi Bouzazi1, a), Bapitste Sichère1, Abdelatif Jaouad1, Vincent Aimez1, Richard Arès1, and Simon Fafard1, 2. (2015). The Voltage Bias External Quantum Efficiency Measurements for a Full Characterization of a Monolithic Multijunction Solar Cell. proceedings CPV11, (Article sous presse).
  • Olivier Richard1, Maïté Volatier1, Maxime Darnon1, Abdelatif Jaouad1,a), Boussairi Bouzazi1, Richard Arès1, Simon Fafard1, Vincent Aimez1. (2015). Through Cell Vias Contacts for Multijunction Solar Cells. proceedings CPV11, (Article accepté).
  • Olivier Richard1, Maïté Volatier1, Maxime Darnon1, Abdelatif Jaouad1,a), Boussairi Bouzazi1, Richard Arès1, Simon Fafard1, Vincent Aimez1. (2015). Through Substrate Vias Contacts for Multijunction Solar Cells. proceedings CPV11, (Article sous presse).
  • A.Y. Bioud, A. Boucherif, S. Fafard, R. Ares, V. Aimez. (2015). Systematic study of mesoporous germanium formation regimes by bipolar electrochemical etching. proceedings ICSI-9, (Article sous presse).
  • Matthew M. Wilkins1, Ahmed Gabr1, Pratibha Sharma1, Henry Schriemer1, Simon Fafard2, Karin Hinzer1. (2014). 4-JUNCTION SOLAR CELLS WITH DILUTE NITRIDES: OPTIMIZATION WITH LUMINESCENT COUPLING. Proceedings of EU-PVSEC, (Article publié).
  • Kolhatkar G *, Boucherif A, Fafard S, Aimez V, Ares R. (2014). Growth optimisation and bandgap determination of AlGaNAs alloys for 4-junction CPV solar cells. Book of Abstracts, (Article publié).
  • Paquette B *, DeVita M *, Turala A *, Kolhatkar G *, Boucherif A, Jaouad A, Wilkins M *, Wheeldon J, Walker A *, Hinzer K, Fafard S, Aimez V, Arès R. (2013). Chemical Beam Epitaxy Growth of AlGaAs/GaAs Tunnel Junctions Using Trimethyl Aluminium for Multijunction Solar Cells. AIP Conference Proceedings, 48. (Article publié).
  • Fafard S. (2012). Low-Cost High-Performance Concentrated PhotoVoltaic (CPV) Solar Cell Production and Optimization using III-V Quantum Dot Material Band-Gap Engineering. OSE Conference papers, SW2A.3. (Article publié).
  • Fafard S, Valdivia C, Wallace S. (2012). The “fill-factor bias measurement” for advanced triple-junction solar cell characterization and quality control. AIP Conference Proceedings 1477, 118. (Article publié).
  • Homier R *, Jaouad A, Turala A *, Valdivia C, Masson D, Wallace S, Fafard S, Arès R, Aimez V. (2012). Antireflection coating for triple-junction III-V/Ge high efficiency solar cells based on low frequency PECVD silicon nitride. Book of Abstracts, (Article publié).
  • Yandt M *, Wheeldon J, Valdivia C, Chow S *, Thériault O *, Johnson A *,Szadkowski F, Armstrong M, Motte L, Cassidy T, Sivillà I, Berrios J, Rosier B, Wallace S, Fafard S, Swinton M, Shepherd F, Cook J, Hinzer K. (2011). A New On‐Sun Test Facility At The SUNRISE’ Quantum‐Dot‐Enhanced CPV Module Demonstration System. AIP Conference Proceedings 1407, 224. (Article publié).
  • Wheeldon J, Walker A *, Valdivia C, Chow S *, Theriault O *, Beal R, Yandt M *, Masson D, Riel B, McMeekin D, Puetz N, Wallace S, Aimez V, Arès R, Hall T, Fafard S, Hinzer K. (2011). Efficiency Measurements and Simulations of GaInP/InGaAs/Ge Quantum Dot Enhanced Solar Cells at up to 1000‐Suns Under Flash and Continuous Concentration. AIP Conference Proceedings 1407, 220-. (Article publié).
  • Homier R *, Turala A *, Kolhatkar G *, Wheeldon J, Valdivia C, Proulx F, Masson D, Fafard S, Wallace S, Hinzer K, Jaouad A, Ares R, Aimez V. (2011). Chemical Passivation and Antireflection Coating of Triple-Junction III-V/Ge Solar Cells with Indium Tin Oxide Electrode. Conference proceedings, (Article publié).
  • Turala A *, Homier R *, Kolhatkar G *, Wheeldon J, Valdivia C, Proulx F, Jaouad A, Masson D, Fafard S, Wallace S, Hinzer K, Arès R, Aimez V. (2011). Transparent Indium Tin Oxide Front-Side Electrode for Low-Cost Multi-Junction Solar Cells. Conference proceedings, (Article publié).
  • Wheeldon J, Valdivia C, Masson D, Proulx F, Riel B, Puetz N, Desfonds E, Fafard S, Rioux B, SpringThorpe A, Arès R, Aimez V, Armstrong M; Swinton M, Cook J, Shepherd F, Hall T, Hinzer K. (2010). High-efficiency commercial grade 1cm2 AlGaInP/GaAs/Ge solar cells with embedded InAs quantum dots for concentrator demonstration system. Proc. SPIE 7750, (Article publié).
  • Chow S *, Valdivia C, Wheeldon J, Ares R, Arenas O *, Aimez V, McMeekin D, Fafard S, Hinzer K. (2010). Thermal test and simulation of alumina receiver with high efficiency multi-junction solar cell for concentrator systems. Proc. SPIE 7750, (Article publié).
  • Kolhatkar G *, Wheeldon J, Valdivia C, Walker A *, Fafard S, Turala A *, Jaouad A, Arès R, Aimez V, Hinzer K. (2010). Time-dependent analysis of AlGaAs/AlGaAs tunnel junctions for high efficiency multi-junction solar cells. Proc. SPIE 7750, (Article publié).
  • Valdivia C, Fafard S. (2010). High efficiency concentrated photovoltaic (CPV) solar cells using epitaxial self-assembled III-V quantum dot materials. Conference proceedings, (Article publié).
  • Valdivia C, Chow S *, Fafard S, Thériault O *, Yandt M *, Wheeldon J, Springthorpe A, Rioux B, McMeekin D, Masson D, Riel B, Aimez V, Arès R, Cook J, Hall T, Shepherd F, Hinzer K. (2010). Measurement of high efficiency 1 cm2 AlGaInP/InGaAs/Ge solar cells with embedded InAs quantum dots at up TO 1000 suns continuous concentration. Conference Record of the IEEE Photovoltaic Specialists Conference, 1253 - 1258. (Article publié).
  • Wheeldon J, Valdivia C, Walker A *, Kolhatkar G *, Masson D, Riel B, Fafard S, Jaouad A, Turala A *, Arès R, Aimez V, Hall T, Hinzer K. (2010). GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study. AIP Conference Proceedings, Volume 1277, 28-31. (Article publié).
  • Wheeldon J, Valdivia C, Walker A *, Kolhatkar G *, Hall T, Hinzer K, Masson D, Fafard S, Jaouad A, Turala A *, Ares R, Aimez V. (2009). AlGaAs tunnel junction for high efficiency multijunction solar cells: Simulation and measurement of temperature-dependent operation. Conference Record of the IEEE Photovoltaic Specialists Conference, 106-111. (Article publié).

Propriétés intellectuelles

Brevets

  • (2015). Solar cell with epitaxially grown QD material. US - 9,018,515. (Terminé).
  • (2015). SOLAR CELL AND METHOD OF FABRICATION THEREOF. 201080044360.1; BLG Ref: PAT 6079W-80. (Terminé).
  • (2014). SOLAR CELL WITH EPITAXIALLY GROWN QUANTUM DOT MATERIAL. 2011282441. (Terminé).
  • (2013). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. ZL200780029521.8 ; S/N 200780029521.8. (Terminé).
  • (2013). Solar cell and method of fabrication thereof. 309256; S/N MX/A/2012/001218 (PAT 6079W-21). (Terminé).
  • (2013). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 2007283383; S/N 2007283383. (Terminé).
  • (2013). Solar cell with epitaxially grown quantum dot material. 5248782; S/N 2006-548059. (Terminé).
  • (2013). Solar cell and method of fabrication thereof. 8,378,209 ; S/N 12/840,523. (Terminé).
  • (2013). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 8,362,460; S/N 13/362,444. (Terminé).
  • (2012). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 305804; S/N MX/A/2011/005394. (Terminé).
  • (2012). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 196477 ; S/N 196477. (Terminé).
  • (2012). Apparatus and method to characterize multijunction photovoltaic solar cells. 8,190,386 ; S/N 13/230,919. (Terminé).
  • (2012). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 8,124,958 ; S/N 12/959,960. (Terminé).
  • (2012). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 2050124 (CH); S/N 07763924.3. (Terminé).
  • (2012). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 60 2007 020 871.8; S/N 07763924.3. (Terminé).
  • (2012). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 2050124 (BE); S/N 07763924.3. (Terminé).
  • (2012). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 2050124; S/N 07763924.3. (Terminé).
  • (2012). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 2050124; S/N 07763924.3. (Terminé).
  • (2012). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 2050124 ES; S/N 07763924.3. (Terminé).
  • (2012). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 2050124; S/N 07763924.3. (Terminé).
  • (2011). Apparatus and method to characterize multijunction photovoltaic solar cells. 8,073,645; S/N 13/118,533. (Terminé).
  • (2011). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. PAT 3678W-21; S/N MX/A/2009/001151. (Terminé).
  • (2011). Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. 7,872,252; S/N 11/776,163. (Terminé).
  • (2011). Solar cell with epitaxially grown quantum dot material. 7,863,516; S/N 11/038,230. (Terminé).
  • (2009). Solar cell with epitaxially grown quantum dot material. 2005205373; S/N 2005205373. (Terminé).
  • (2009). Solar cell with epitaxially grown quantum dot material. 100477289C; S/N 200580002861.2. (Terminé).
  • Apparatus and method to characterize multijunction photovoltaic solar cells. PAT 6713W-90; S/N CA2011050674. (Demande en cours).
  • Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. PAT 3678W-1; S/N 2,657,504. (Retiré).
  • Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. PAT 3678W-15; S/N PI 0714267-6. (Retiré).
  • Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. PAT 3678W-90; S/N CA2007/001278. (Demande en cours).
  • Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. PAT 3678BW-90; S/N CA2012/050906. (Demande en cours).
  • Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails. PAT 3678W-19; S/N 286/DELNP/2009. (Demande en cours).
  • Quantum Dot Infrared Photodetectors (QDIP). 6,239,449. (Terminé).
  • Quantum Dot Tunable External Cavity Lasers (QD-TEC Lasers). 6,768,754. (Terminé).
  • Solar cell and method of fabrication thereof. PAT 6079W-1; S/N 2,769,318. (Retiré).
  • Solar cell and method of fabrication thereof. PAT 6079W-4; S/N 2010278623. (Demande en cours).
  • Solar cell and method of fabrication thereof. PAT 6079W-23; S/N 217825. (Demande en cours).
  • Solar cell and method of fabrication thereof. PAT 6079W-15; S/N 112012002038-2. (Retiré).
  • Solar cell and method of fabrication thereof. PAT 6079A-2; S/N 13/663,803. (Demande en cours).
  • Solar cell and method of fabrication thereof. PAT 6079W-51; S/N 12112796.7. (Demande en cours).
  • Solar cell and method of fabrication thereof. PAT 6079W-80; S/N 201080044360.1. (Demande en cours).
  • Solar cell assembly with solder lug. PAT 6303W-80; S/N 201180018936.1. (Retiré).
  • Solar cell assembly with solder lug. PAT 6303-2; S/N 20110186105. (Retiré).
  • Solar cell with epitaxially grown quantum dot material. PAT 2529B-2; S/N 13/173,638. (Demande en cours).
  • Solar cell with epitaxially grown quantum dot material. PAT 2529BW-4; S/N 2011282441. (Demande en cours).
  • Solar cell with epitaxially grown quantum dot material. PAT 2529BW-23; S/N 224257. (Demande en cours).
  • Solar cell with epitaxially grown quantum dot material. PAT 2529BWEP-81; S/N 11809122.2. (Demande en cours).
  • Solar cell with epitaxially grown quantum dot material. PAT 2529W-15; S/N PI0506541-0. (Retiré).
  • Solar cell with split gridline pattern. PAT 6301-2; S/N 20110277835. (Retiré).
  • Transducer to Convert Optical Energy to Electrical Energy. PAT 7760, US Patent Appl. 61913675. (Demande en cours).

Marques de commerce

  • Cyrium. (2011). (Enregistré).
  • QDEC. (2011). (Enregistré).
  • QDEC. (2011). (Enregistré).
  • Cyrium. (2011). (Enregistré).
  • Cyrium. (2011). (Enregistré).
  • Cyrium. (2011). (Enregistré).
  • QDEC. (2010). (Enregistré).
  • QDEC. (2010). (Enregistré).
  • Cyrium. (2010). (Enregistré).
  • Cyrium. (En instance).
  • QDEC. (En instance).

Autres contributions

Activités de collaboration internationale

  • Project Lead and Manager-. (2009-2016).
  • Project Lead and Manager. (2005-2010).
  • member - LN2 -UMI. (2015).

Présentations

  • (2016). Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic GaAs n/p junctions. SPIE Photonics West 2016. San Francisco.
  • (2016). Advances with vertical epitaxial heterostructure architecture (VEHSA) phototransducers for optical to electrical power conversion efficiencies exceeding 50 percent. Photonics West. San Francisco.
  • (2015). Thin n/p GaAs Junctions for Novel High-Efficiency Phototransducers Based on a Vertical Epitaxial Heterostructure Architecture. MRS - Fall meeting. Boston.
  • (2015). The snakes and ladders of technology commercialization. Innovation360. Ottawa.
  • (2015). Energy, Optoelectronic, and CPV Research at LN2. LN2 review meeting. sherbrooke.
  • (2015). Epitaxial Semiconductor Devices for Concentrated Photovoltaics. CSSTC 2015. sherbrooke.
  • (2015). Four-junction solar cell developped using Soitec's expertise in semiconductor materials sets new efficiency record of 38.9% for CPV module. 2015 Canadian Semiconductor and Technology Conference. sherbrooke.
  • (2015). Pushing the Limits of a Hybrid Thermal / PV System. Photovoltaic Specialist Conference. new orleans.
  • (2015). Designs optimisations for concentrated solar systems using dilute nitride four-junction photovoltaics. Photonics North. Ottawa.
  • (2015). Multi-junction Solar Cells with Through Substrate Vias Contacts. Photonics North. Ottawa.
  • (2015). The zero phonon line revisited. EXCON2015. Montreal.
  • (2015). Virtual substrates engineering using porous Si and Ge nanostructures. The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9). Montreal.
  • (2015). Voltage Bias External Quantum Efficiency Measurements for a Full Characterization of a Monolithic Multijunction Solar Cell Device. CPV11. Aix-les-bains.
  • (2015). Effect of Nonuniform Illumination on Triple Junction Solar Cells Under Concentration. CPV11. Aix-les-bains.
  • (2015). External Test Bench Measurement Methods for Studing CPV Modules with Secondary Optics Featuring Wide Range Acceptance Angles. CPV11. Aix-les-bains.
  • (2015). GaAs Solar Cells on Mesoporous Silicon Templates. CVP11. Aix-les-bains.
  • (2015). Through-substrate Vias in Multi-junction Solar Cells by Plasma Etching. CPV11. Aix-les-bains.
  • (2015). Towards CPV Systems Using Dilute Nitride-containing 4-Junction Solar Cells. CPV11. Aix-les-bains.
  • (2015). Multijuction Solar Cell Analysis with the Tunable Automated Subcell Chraracterization Unit. CPV11. Aix-les-bains.
  • (2015). Simulation of a Through-substrate Vias Contact Structure for Multi-junction Solar Cells Under Concentrated Illumination. CPV11. Aix-les-bains.
  • (2015). A 5-Volt photonic power converter. SPIE Photonics West 2015. San Francisco.
  • (2014). Commercialization of Innovative Photo-Transducer Devices. Capital Angel Network. Ottawa.
  • (2014). Concentrated photovoltaics for renewable energy: current research and future challenges. Institut de Recherche et Développement sur l'Énergie Photovoltaïque (IRDEP). Chatou.
  • (2014). CPV solar cells. MSBi meeting. Montreal.
  • (2014). Concentrated photovoltaics for renewable energy: Current research and future challenges. RQMP Grande conference a l'Universite de Montreal. Montreal.
  • (2013). Progress in CPV. PROCEDES, MATERIAUX ET ENERGIE SOLAIRE (PROMES). Font Romeu Odeillo.
  • (2013). CPV cell technologies. Meeting in Grenoble (Confidential). Grenoble.
  • (2013). Chemical Beam Epitaxy Growth of AlGaAs/GaAs Tunnel Junctions using Trimethyl Aluminium for Multijunction Solar Cells. 9TH International Conference on Concentrator Photovoltaic Systems (CPV9). Miyazaki.
  • (2013). Enabling cost-competitive CPV solar energy,. Meeting in China (Confidential). Beijing.
  • (2013). Enabling cost-competitive CPV solar energy. Meeting in China (Confidential). Beijing.
  • (2012). Semiconductor bandgap engineering of III-V multi-junction solar cell devices for CPV applications. INRS workshop. Montreal.
  • (2012). Cellules solaires photovoltaïques CPV à rendement élevé utilisant la nanotechnologie à base d’hétérostructures III-V avec matériaux à points quantiques. 25e Entretiens Jacques Cartier 2012. Lyon.
  • (2012). Low-cost high-performance CPV solar cells and optimization using III-V quantum dot material band-gap engineering. OSA meeting. Eindhoven.
  • (2012). CPV cell overview. Regroupement québécois étudiant sur les matériaux de pointe (RQÉMP). Magog.
  • (2012). Fabrication of CPV cells. The International Conference on Compound Semiconductor Manufacturing Technology (CS ManTech 2012). Boston.
  • (2012). The Fill-Factor Bias Measurement for Advanced Triple-Junction Solar Cell Characterization and Quality Control. 8th International Conference on Concentrating Photovoltaic Systems (CPV8). Toledo.
  • (2012). CPV research in Canada. NSERC-JST workshop on clean energy. Vancouver.
  • (2011). Overview of CPV Technology. Meeting in San Jose (Confidential). San Jose.
  • (2011). Design rules for CPV cells. CPV summit. Seville.
  • (2011). III-V High-Efficiency Multi-junction solar cells for CPV deployments. CCSTC. Vancouver.
  • (2011). Demonstration of triple junction solar cells using nanostructures in the SUNRISE concentrator system at the Canadian Centre for Housing Technology. Photonics North 2011. Ottawa.
  • (2011). A New On-Sun Test Facility at the ‘SUNRISE’ Quantum-Dot-Enhanced CPV Module Demonstration System. International Conference on Concentrating Photovoltaic Systems (CPV7). Las Vegas.
  • (2011). Efficiency Measurements of GaInP/InGsAs/Ge Quantum Dot Enhanced Solar Cells at up to 1000-Suns under Flash and Continuous Concentration. International Conference on Concentrating Photovoltaic Systems (CPV7). Las Vegas.
  • (2011). Low frequency PECVD of SiNx for passivation and antireflection coating of triple-junction III-V/Ge solar cells. International Conference on Concentrating Photovoltaic Systems (CPV7). Las Vegas.
  • (2011). Transparent Indium Tin Oxide (ITO)Front-Side Electrode for Low-Cost Multijunction Solar Cells. International Conference on Concentrating Photovoltaic Systems (CPV7). Las Vegas.
  • (2011). Enabling cost-competitive CPV solar energy. Meeting in San Diego (Confidential). San Diego.
  • (2011). Enabling cost-competitive CPV solar energy. Meeting in San Jose (Confidential). San Jose.
  • (2011). Enabling cost-competitive CPV solar energy. Meeting in China (Confidential). Qingdao.
  • (2011). Enabling cost-competitive CPV solar energy. Meeting in China (Confidential). Nanjing.
  • (2010). CPV Cell Engineering. 3rd Concentrated Photovoltaics Summit Europe. Seville.
  • (2010). CPV solar cells. Meeting in Germany (Confidential). Freiburg.
  • (2010). CPV solar cells. Meeting in China (Confidential). Shanghai.
  • (2010). CPV solar cells. Meeting in Toronto (Confidential). Toronto.
  • (2010). CPV solar cells. Meeting in Greensboro (Confidential). Greensboro.
  • (2010). A Role for MBE for CPV cells?. North American Conference on Molecular Beam Epitaxy (NAMBE). Denver.
  • (2010). Enabling cost-competitive CPV solar energy. Meeting in Toronto (Confidential). Toronto.
  • (2010). Measurement of High Efficiency 1 cm2 AlGaInP/InGaAs/Ge Solar Cells with Embedded InAs Quantum Dots at up to 1000 Suns Continuous Concentration. Photovoltaic Specialists Conference (PVSC35). Honolulu.
  • (2010). High Efficiency Commercial Grade 1 cm2 AlGaInP/GaAs/Ge Solar Cells with Embedded InAs Quantum Dots for Concentrator Demonstration System. Photonics North 2010. Niagara Falls.
  • (2010). Time-dependant analysis of AlGaAs/AlGaAs Tunnel Junctions for High Efficiency Multi-Junction Solar Cells. Photonics North 2010, Photovoltaics Canada First Scientific Conference. Niagara Falls.
  • (2010). High Efficiency Concentrated PhotoVoltaic (CPV) Solar Cells using Epitaxial Self-Assembled III-V Quantum Dot Materials. 93rd Canadian Chemistry Conference and Exhibition in Toronto. Toronto.
  • (2010). GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-junction Solar Cells under Concentration: Resistance Study. International Conference on Concentrating Photovoltaic Systems (CPV-6). Freiburg.
  • (2010). CPV Solar Cells. Optoelectronics Industry Development Association (OIDA). San Jose.
  • (2010). Enabling cost-competitive CPV solar energy. Meeting in San Diego (Confidential). San Diego.
  • (2009). Enabling cost-competitive CPV solar energy. Meeting in San Jose (Confidential). San Jose.
  • (2009). Enabling cost-competitive CPV solar energy. Meeting in Anaheim (Confidential). Anaheim.
  • (2009). Enabling cost-competitive CPV solar energy. Meeting in Anaheim (Confidential). Anaheim.
  • (2009). Enabling cost-competitive CPV solar energy. Meeting in Mountain View (Confidential). Mountain View.
  • (2009). AlGaAs tunnel junction for high efficiency multi-junction solar cells: simulation and measurement of temperature-dependent operation. Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. Philadelphia.
  • (2009). Enabling cost-competitive CPV solar energy. Meeting in Newport Beach (Confidential). Newport Beach.
  • (2009). Enabling cost-competitive CPV solar energy. Meeting in San Jose (Confidential). San Jose.
  • (2009). Enabling cost-competitive CPV solar energy. 2nd Concentrated Photovoltaics Summit. Toledo.
  • (2009). Enabling cost-competitive CPV solar energy. Photovoltaic Innovation Network. (NSERC PVIN). Hamilton.
  • (2009). Enabling cost-competitive CPV solar energy. Meeting in Philadelphia (Confidential). Philadelphia.
  • (2009). Enabling cost-competitive CPV solar energy. CPV Summit, USA 2009. San Diego.

Les informations disponibles dans la base de données Expertus sont tirées du CV commun canadien.