Laboratoire Nanotechnologies et Nanosystèmes – LN2

Publications significatives

Harvey-Collard, P., Drouin, D., & Pioro-Ladrière, M. (2014). A silicon nanocrystal tunnel field effect transistor. Applied Physics Letters, 104(19), 193505.
Guilmain, M., Labbaye, T., Dellenbach, F., Nauenheim, C., Drouin, D., & Ecoffey, S. (2013). A damascene platform for controlled ultra-thin nanowire fabrication. Nanotechnology, 24(24), 245305.
Demers, H., Poirier-Demers, N., Phillips, M. R., de Jonge, N., & Drouin, D. (2012). Three-dimensional electron energy deposition modeling of cathodoluminescence emission near threading dislocations in GaN and electron-beam lithography exposure parameters for a PMMA resist. Microscopy and Microanalysis, 18(6), 1220-1228.
Roy-Guay, D., Pioro-Ladrière, M., Morris, D., Tallaire, A., Achard, J., & Drouin, D. (2012). Cathodoluminescence and Photoluminescence of NV Centers. International Journal of Nanoscience, 11(04), 1240016.
Jouvet, N., Bounouar, M. A., Ecoffey, S., Nauenheim, C., Beaumont, A., Monfray, S., ... & Drouin, D. (2012). Recent developments on 3D integration of metallic set onto CMOS process for memory application. International Journal of Nanoscience, 11(04), 1240024.
Cutivet, A., Altuntas, P., Defrance, N., Okada, E., Avramovic, V., Lesecq, M., ... & Maher, H. (2015, September). Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors. In Microwave Integrated Circuits Conference (EuMIC), 2015 10th European (pp. 93-96). IEEE.
Nolet, F., Rhéaume, V. P., Parent, S., Charlebois, S. A., Fontaine, R., & Pratte, J. F. (2016). A 2D Proof of Principle Towards a 3D Digital SiPM in HV CMOS With Low Output Capacitance. IEEE Transactions on Nuclear Science, 63(4), 2293-2299.
Dequivre, T., Al Alam, E., Maurais, J., Brisard, G. M., Pratte, J. F., & Charlebois, S. A. (2016). Electrografted P4VP for High Aspect Ratio Copper TSV Insulation in Via-Last Process Flow. ECS Journal of Solid State Science and Technology, 5(6), P340-P344.
Lee Sang, B., Gour, M. J., Darnon, M., Ecoffey, S., Jaouad, A., Sadani, B., ... & Souifi, A. (2016). Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 34(2), 02M102.