Publications significatives
- Harvey-Collard, P., Drouin, D., & Pioro-Ladrière, M. (2014). A silicon nanocrystal tunnel field effect transistor. Applied Physics Letters, 104(19), 193505.
- Guilmain, M., Labbaye, T., Dellenbach, F., Nauenheim, C., Drouin, D., & Ecoffey, S. (2013). A damascene platform for controlled ultra-thin nanowire fabrication. Nanotechnology, 24(24), 245305.
- Demers, H., Poirier-Demers, N., Phillips, M. R., de Jonge, N., & Drouin, D. (2012). Three-dimensional electron energy deposition modeling of cathodoluminescence emission near threading dislocations in GaN and electron-beam lithography exposure parameters for a PMMA resist. Microscopy and Microanalysis, 18(6), 1220-1228.
- Roy-Guay, D., Pioro-Ladrière, M., Morris, D., Tallaire, A., Achard, J., & Drouin, D. (2012). Cathodoluminescence and Photoluminescence of NV Centers. International Journal of Nanoscience, 11(04), 1240016.
- Jouvet, N., Bounouar, M. A., Ecoffey, S., Nauenheim, C., Beaumont, A., Monfray, S., ... & Drouin, D. (2012). Recent developments on 3D integration of metallic set onto CMOS process for memory application. International Journal of Nanoscience, 11(04), 1240024.
- Cutivet, A., Altuntas, P., Defrance, N., Okada, E., Avramovic, V., Lesecq, M., ... & Maher, H. (2015, September). Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors. In Microwave Integrated Circuits Conference (EuMIC), 2015 10th European (pp. 93-96). IEEE.
- Nolet, F., Rhéaume, V. P., Parent, S., Charlebois, S. A., Fontaine, R., & Pratte, J. F. (2016). A 2D Proof of Principle Towards a 3D Digital SiPM in HV CMOS With Low Output Capacitance. IEEE Transactions on Nuclear Science, 63(4), 2293-2299.
- Dequivre, T., Al Alam, E., Maurais, J., Brisard, G. M., Pratte, J. F., & Charlebois, S. A. (2016). Electrografted P4VP for High Aspect Ratio Copper TSV Insulation in Via-Last Process Flow. ECS Journal of Solid State Science and Technology, 5(6), P340-P344.
- Lee Sang, B., Gour, M. J., Darnon, M., Ecoffey, S., Jaouad, A., Sadani, B., ... & Souifi, A. (2016). Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 34(2), 02M102.