Events

Séminaire IQ Interface: Mingda Li

Date : 26 September 2018 10:45

Type : Séminaires

Location : D7-2023

Title: Quantized dislocations for dislocated functional and quantum materials Abstract: A dislocation, just like a phonon, is a type of atomic lattice displacement but subject to an extra topological constraint. However, unlike the phonon which has been quantized for decades, the dislocation has long remained classical. This presentation is a pedagogical introduction on our recent theoretical effort of quantized dislocation, aka the “dislon” theory [1], with a focus on new phenomena and predictive power. By establishing a central equation “dislocation=quantum field”, the influence of dislocations to materials functionalities - such as electrical, optical, magnetic and thermal properties - can be computed at a new level of clarity. [1] M. Li, “Quantized Dislocations”, https://arxiv.org/abs/1808.07777 , Invited Topical Review for J. Phys.: Condens. Matter. Short Bio: Mingda is an Assistant Professor of Nuclear Science and Engineering Department at MIT since 2018. He completed his B.S. in Engineering Physics from Tsinghua University in 2009, and his Ph.D. in Nuclear Science and Engineering from MIT in 2015. His research interest lies in quantum defect engineering, to use defects to tailor materials functionalities and quantum ordering, and to develop novel algorithms and spectroscopies to resolve defect information.

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