Micro/nano-fabrication techniques. Réalization of integrated photonic devices for telecommunication and biosensing devices
For more information, look at http://www.gel.usherbrooke.ca/crn2/pages_personnel/aimez/accueil_en.htm
Projets étudiants : http://www.gel.usherbrooke.ca/crn2/pages_personnel/aimez/etudiants_en.php
S7/S8 – Final year projects
E. Wieczerzak, R. Hamel, V. Aimez, P.G. Charette, M. Grandbois, and E. Escher, Monitoring native chemical ligation by surface plasmon resonance. Journal of Peptide Sience, 2007, In Press
Y. Linzon, R. Morandotti, M. Volatier, V. Aimez, R. Ares, S. Bar-Ad, Nonlinear scattering and trapping by local photonic potentials, Phys. Rev. Lett. 99, 133901, 2007.
S. Suntsov, K. G. Makris, D. N. Christodoulides, G. I. Stegeman, R. Morandotti, M. Volatier, V. Aimez, R. Arès, C. E. Rüter, and D. Kip, Optical modes at the interface between two dissimilar discrete meta-materials, Opt. Express 15, 4663-4670, 2007.
Y. Zuo, M. Mony, B. Bahamin, E. Grondin, V. Aimez, and D. V. Plant, Bulk electro-optic deflector-based switches, Vol. 46, 16, pp. 3323-3331, Applied Optics, 2007.
N. Pauc, V. Aimez, E. Hadji and D. Drouin, Fabrication of photonic crystal light emitting devices on silicon on insulator Symposium B : Semiconductor nanostructures towards electronic and optoelectronic device applications, E-MRS 2007 Strasbourg (France) May 28 - June 1, 2007. (Best poster)
A. Francois, V. Aimez, J. Beauvais, M. Gendry, P. Regreny, Enhancement of quantum well intermixing on InP/InGaAs/InGaAsP heterostructures using titanium oxide surface stressors to induce forced point defect diffusion, Applied Physics Letters 89, 164107, 2006.
N. Pauc, M. R. Phillips, V. Aimez, D. Drouin , Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence, Applied Physics Letters 89, 161905, 2006
A. Jaouad, V. Aimez, Passivation of Air-Exposed AlGaAs Using Low Frequency Plasma-Enhanced Chemical Vapour Deposition of Silicon Nitride, Applied Physics Letters 89, 092125, 2006.
B. Ilahi, B. Salem, V. Aimez, L. Sfaxi, H. Maaref, D. Morris, Post growth engineering of InAs/GaAs quantum dots' band-gap using proton implantation and annealing, Vol. 17, pp. 3707-3709, Nanotechnology, June 2006
B. S. Ooi, H. S. Djie, V. Aimez (2006), InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering, Vol. 288, 1, pp. 40-3, Journal of Crystal Growth, February, 2006
B. Salem, D. Morris, V. Aimez, J. Beauvais, D. Houde (2006), Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials, Vol. 21, 3, pp. 283-286, Semiconductor Science and Technology, March 2006
B. Salem, D. Morris, Y. Salissou, V. Aimez, S. Charlebois, M. Chicoine, and F. Schiettekatte (2005) Terahertz Emission Properties of Arsenic and Oxygen Ion-Implanted GaAs Based Photoconductive Antennas, J. of Vac. Science and Technology A, Vol. 24, 3, pp. 774-777, May 2006
A. François, D. Barba, V. Aimez, and J. Beauvais, Measurements of TiO2 stress induced on InP/InGaAs/InGaAsP quantum well heterostructure, Journal of Vacuum Science and Technology A, 24 797-801, 2006.
B. Salem, D. Morris, V. Aimez, J. Beauvais, and D. Houde, Characteristics of Terahertz Time-Domain Spectroscopy Devices Fabricated using Proton-Bombarded GaAs Photoconductive Materials, Semiconductor Science and Technology, 21, 283-286, 2006.
B. Salem, V. Aimez, D. Morris, A. Turala, P. Regreny and M. Gendry, Bandgap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing, Applied Physics Letters, v.87, 24115, Oct. 2005.
M. Nannini, E. Grondin, A. Gorin, V. Aimez and J.E. Broquin Hybridization of III-V semiconductor membranes onto ion-exchanged waveguides, IEEE Journal of selected Topics in Quantum Electronics, Special issue on Integrated Optics, vol.11 Issue 2, pp 547-554, 2005
V. Aimez, J. Beauvais, J. Beerens, D. Morris, H.S. Lim, B.S. Ooi Low energy ion implantation induced quantum well intermixing, IEEE Journal of selected Topics in Quantum Electronics, Vol.8, issue 4,pp 870-879, 2002.