Advanced back-end processing for GaN transistors with high breakdown voltage and low thermal resistance
Gallium Nitride (GaN) - based transistors are an emerging technology that addresses the need for high-power switching devices of tomorrow. This new generation of transistors has been developed using the know-how acquired in III-V semiconductors and they offer advantages compared to conventional solutions based on silicon (Si). Nevertheless, these new technologies suffer from both electrical (including breakdown voltage) and thermal limitations; it is necessary to improve the design and packaging of new devices to reduce the gap between theoretical and experimental performance as well as the reliability of components for critical applications. To achieve these objectives, it is essential to compare different technological approaches and thus achieve the full potential of GaN components.
The collaboration between GaN Systems, a world leader in the commercialization of GaN-based transistors, and the Université de Sherbrooke aims to improve component performance and reliability. Improving the performance of the components requires better support for the thermal budget via a reduction in the thermal resistance but also by the optimization of the intrinsic parameters of the transistors in order to improve the electrical characteristics and in particular their breakdown voltages.
April 1st, 2017 - March 31st, 2020
GaN HEMTs, e-mode transistors, power component, energy efficiency
Hassan Maher, LN2 UdeS