Varian ion implanter


Implantation of energy ions between 18 keV and 200 keV (simply ionized atoms) or 400 keV (doubly ionized atoms)

Manufacturer and model

Varian - CF3000

Technical specifications
  • Maximum acceleration voltage: 200 kV
  • Implanter with medium current (beam current of a few hundred μA in the best case)
  • Gaseous or solid sources for species to be implanted
  • Cryogenic, turbomolecular and diffusion pumping
  • Maximum Sample Diameter: 4 "
Examples of available processes
  • Implementation of species such as As, P, H, N, Si, B, Xe, Ag, F
  • Doping of semiconductors
  • Generation of point defects for quantum well interdiffusion processes

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