Implantation of energy ions between 18 keV and 200 keV (simply ionized atoms) or 400 keV (doubly ionized atoms)
Manufacturer and model
Varian - CF3000
- Maximum acceleration voltage: 200 kV
- Implanter with medium current (beam current of a few hundred μA in the best case)
- Gaseous or solid sources for species to be implanted
- Cryogenic, turbomolecular and diffusion pumping
- Maximum Sample Diameter: 4 "
Examples of available processes
- Implementation of species such as As, P, H, N, Si, B, Xe, Ag, F
- Doping of semiconductors
- Generation of point defects for quantum well interdiffusion processes
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