Plasma Etcher STS Multiplex Inductively Coupled Plasma III-V

Description

Etching of III-V compounds and heterostructures and of metals by high-density plasma

Manufacturer and model

STS - Multiplex Inductively Coupled Plasma (ICP) SR III-V system

Technical specifications
  • Temperature of the electrode (plate): -20 to 70 ° C
  • ICP source: up to 1 kW at 13.56 MHz
  • Plate source: 0-300 W at 13.56 MHz
  • Gas installed on the system: Ar, N₂, Cl₂, He, H₂, CH₄, O₂, SiCl₄, BCl₃, SF₆
  • Sample size: substrates up to 200 mm in diameter; Possibility to work with small samples
  • Optical tracking system in real time (end point detection).
  • Optical spectrometer (detection of species)
Examples of available processes
  • “Ridge" structure etching for heterostructured lasers.
  • Chromium etching for the manufacture of photomasks.
  • Etching of materials III-V, Ge, Si, GaN, diamond, metals

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