Plasma Etcher STS Advanced Oxide AOE


Etching of high-density plasma dielectric materials

Manufacturer and model


Technical specifications
  • Temperature of electrode (plate): -20°C to 70°C
  • ICP source: up to 3 kW at 13.56 MHz
  • Plate source: up to 1 kW at 13.56 MHz
  • Gases installed on the system: Ar, He, H₂, C₄F₈, O₂, CF₄
  • Sample size: substrates up to 100 mm diameter; Compatible with small samples
Examples of available processes
  • Etching of silicon oxide
  • Etching of silicon nitride

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