Plasma Etcher Oxford Estralas


Silicon etching

Manufacturer and model

Oxford Instruments - Plasma Pro 100 Estralas

Technical specifications 

  • Electrode temperature : -150°C to 100°C
  • ICP Source :

    • Up to 300W at 400kHz
    • Up to 600W at 13.56MHz

  • Plate source : up to 5kW at 2MHz
  • Gas installed on the system : Ar, O2, SF6, C4F8, CF4
  • Sample size : up to 200mm
  • Optical spectrometer (end point) : no
Examples of available processes 
  • Bosch process
  • Cryogenic etching of Si

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