Plasma Etcher RIE


Plasma etching

Manufacturer and model

March - CS-1701

Technical specifications
  • Substrate size up to 200mm
  • 4 available gases: SF6, O2, CF4, H2 / N2
  • Maximum 600W RF power
  • Computer Controlled
  • Recipes in a file
  • Ability to control pressure
Examples of available processes
  • Silicon etching
  • Etching of SiO2
  • Engraving of Si3N4
  • Engraving of polyimide and other materials
  • Oxygen cleaning
  • Changes in surface condition (adhesion, wetting, etc.)
  • Treatment with H2 / N2 (forming gas)

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