CBE for III-V materials

Description

Dedicated to the growth of III-V materials (Arsenides and Phosphides)  

Manufacturer and model

VG semicon - V90       

Technical specifications
  • Wafer size up to 4 "
  • Equipped with ABES, RHEED, Pyrometry and RGA
Examples of available processes

III-V materials (Arsenides and Phosphides) for optoelectronics

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