ALD - Atomic Layer Deposition


Deposition of very thin dielectric layers, passivation

Manufacturer and model

Picosun - R-200 Advanced

Technical specifications
  • Small samples with 200mm substrates
  • Deposition temperature from 21°C to 500°C
  • 3 liquid sources at ambient temperature, 2 heated liquid sources (max 250°C), 1 reactive gas (NH₃), O+ source by indirect O₂ plasma, H+ source by N₂ plasma: indirect H₂
Examples of available processes
  • Deposition of 5nm of SiO₂ at 300°C from SAM.24 and O₂
  • Deposition of 5nm Al₂O₃ at 250°C from TMA1 and H₂O

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