Aller au contenu

Microscope Zeiss Leo 1540 XB

Description

Scanning electron microscopy. High-resolution electron beam lithography. Scanning Transmission Electron Microscopy (STEM).

Manufacturer and model

Zeiss - Nano Technology Systems Division - 1540XB CrossBeam Workstation

Technical specifications

  • Acceleration voltage: from 100 V to 30 kV, adjustable in steps of 10V
  • Probe size from 1nm to 20 kV, 2.5 nm to 1 kV
  • Beam current: 4 pA to 20 nA
  • Magnification: from 20 X to 950 kX
  • Source of e-: Schottky field effect filament
  • Sample carrier
  • 6-axis motorized displacement super-eucentric

Displacement of sample

  •   X: 100 mm motorized
  •   Y: 100 mm motorized
  •   Z: 60 mm motorized
  •   Z ': 10 mm motorized
  •   rotation: 360 ° motorized
  •   inclination: -10 ° to 60 ° motorized

Detectors

  •  secondary electrons (for the electron beam and the ion beam)
  •  intra-column (in-lens)
  •  STEM detector
  • Electrolithography software compatible with files of several types, such as DesignCad, Autocad (.dxf), GDSii, CIF

Accessories

  • PC-controlled Raith beam blanker using NPGS 4 MHz electrolithography software

Examples of available processes

  • Lithography by ultra high resolution electron beam (better than 20 nm in the PMMA resin)
  • Observations in scanning electron microscopy