Method: O2 plasma
Substrate size: up to 6 "(150 mm) in diameter
Equipment: Plasmaline oxygen plasma chamber
Comments: "barrel etcher" style room
Method: as needed
Substrate Size: batch processing up to 4 "(100 mm) diameter, individual treatment for larger substrates up to 150 mm
Equipment: wet benches
Comments: Ultrasonic baths, water DI 20 Megohms, water baths, etc.
Method: RTA, heating by quartz lamps
Substrate size: max. 4 ", compatible with small samples
Equipment: Jipelec Jetfirst computer-controlled
Comments: thermocouple control, rise rate up to 100 ° C / s
Method: horizontal oven
Substrate size: max. 6 "
Equipment: Tylan furnace
Comments: N₂ atmosphere or forming gas (H₂ / N₂)
Method: thermal
Substrate size: max. 6 "
Equipment: Tylan furnace
Comments: T ° up to 1050 ° C
Method: thermal
Substrate size: max. 3 "
Equipment: Sentrotech oven
Comments: T ° up to 1200 ° C, atmosphere N₂, forming gas H₂ / N₂
Method: Exposure at 250 nm through a resin mask
Substrate size: small samples up to 100 mm in diameter
Equipment: DUV - Flooder
Method: direct write to the 442 nm laser beam
Substrate size: max. 150 x 150 mm²
Equipment: Direct laser writing system - Photoplotter
Comments: ultimate resolution 0.6 μm, use of other resins possible
Method: direct write to the 442 nm laser beam
Substrate size: max. 150 x 150 mm²
Equipment: Direct laser writing system - Photoplotter
Comments: ultimate resolution 0.6 μm, use of other resins possible
Method: direct write to the 442 nm laser beam
Substrate size: max. 150 x 150 mm²
Equipment: Direct laser writing system - Photoplotter
Comments: ultimate resolution 0.6 μm
Method: UV exposure through a mask
Substrate size: max. 3 in.
Equipment: OAI 200 mask aligner
Comments: resolution 0.8 μm, 200 W UV lamp emitting between 220 and 436 nm, max. masks = 4x4 sq. ft., possibility of aligning with small samples, use of other resins possible
Method: direct writing or use of masks
Substrate size: according to equipment
Equipment: Laser Direct Writing System - Photoplotter, OAI 200 Aligner
Method: Electron Beam Lithography
Equipment: Zeiss 1530 electron microscope
Comments: Assisted with NPGS Direct Write Software
Method: Electron Beam Lithography
Substrate size: 75 x 75 mm²
Equipment: Zeiss VP scanning electron microscope with field effect source
Comments: Assisted with NPGS Direct Write Software
Method: Electron Beam Lithography
Substrate size: 100 x 100 mm²
Equipment: Focused ion beam - FIB Zeiss CrossBeam
Comments: Assisted with NPGS Direct Write Software
Method: SiDWEL
Substrate size: according to equipment
Equipment: Zeiss VP scanning electron microscope or focused ion beam - FIB Zeiss CrossBeam
Comments: Assisted with NPGS Direct Write Software
Method: ion implantation
Substrate size: max. 4 ", compatible with small samples
Equipment: Varian CF3000 Ionic Implant
Comments: gaseous sources for implanted species; substrate temperature 25 at 200 ° C; implantations of H, B, N, Si, P, As, Xe; potential for doping and implantation on materials other than Si, such as GaAs and other semiconductor materials
Method: LPCVD
Substrate size: max. 6 in.
Equipment: Tylan Furnace
Method: evaporation by electron gun
Substrate size: max. 4 in.
Equipment: Evaporator with electron gun
Comments: Carousel of 4 crucibles allows the deposit of multilayers without having to break the void; Rotating sample holder; resolution of 0.1 nm on the thickness
Method: focused ion beam
Substrate size: max. 4 ", compatible with small samples
Equipment: Focused ion beam - FIB Zeiss CrossBeam
Comments: ultimate resolution <40 nm
Method: electron gun
Substrate size: max. 4 in.
Equipment: Sloan evaporator
Comments: Carousel of 4 crucibles allows the deposit of multilayers without having to break the void; rotating sample holder; resolution of 0.1 nm on the thickness
Method: Joule evaporation
Substrate size: max. 2 in.
Equipment: Evaporator with electron gun
Method: Cathodic sputtering - Sputtering
Substrate size: max. 6cm
Equipment: Emitech cathode sputtering
Comments: deposit at room temperature
Method: PECVD
Substrate size: max. 8 ", compatible with small samples
Equipment: Vapor Deposition - PECVD - STS
Comments: doping possibilities with boron, germanium or phosphorus
Method: RF sputtering
Substrate Size: Max Diameter 4 in
Equipment: SPT320 cathode sputtering
Comments: 3 targets available for successive layer deposits without breaking the void up to 3 different materials.
Method: focused ion beam
Substrate size: max. 4 ", compatible with small samples
Equipment: FIB Zeiss CrossBeam
Comments: ultimate resolution <20 nm
Method: focused ion beam
Substrate size: max. 4 ", compatible with small samples
Equipment: FIB Zeiss CrossBeam
Comments: ultimate resolution <20 nm
Method: unfocused ion beam
Substrate size: max. 3cm
Equipment: ion Tech
Comments: uses an argon plasma
Method: high density plasma
Size substrate: up to 100mm diameter, compatible with small samples
Equipment: Plasma Etching System for ASE Silicon STS Multiplex
Method: high density plasma
Size substrate: up to 200 mm diameter, compatible with small samples
Equipment: Plasma etching system for III-V
Method: high density plasma
Size substrate: up to 100mm diameter, compatible with small samples
Equipment: Plasma etching system for silicon oxide
Method: as needed
Substrate Size: Batch processing for substrate size up to 4 "in diameter. Individual immersion treatment for substrate up to 150mm.
Equipment: wet benches
Comments: vast possibilities of sauces of attack and sizes of substrate
Method: Electrografting of copper in basic solution
Substrate size: max. 4 ", compatible with small samples
Equipment: electrochemical reactor
Comments: metallization of high form factor TSV (up to 1:20)
Method: NiB Electroless
Substrate size: max. 4 ", compatible with small samples
Equipment: electroless module
Comments: up to 80 nm, driver. Use as a barrier to copper diffusion. Use as seed coat for electroplating.
Method: Electrografting of P4VP in aqueous solution
Substrate size: max. 4 ", compatible with small samples
Equipment: electrochemical reactor
Comments: Insulation of semiconductor substrates. Up to 300 nm thick. Hyper compliant (70% coverage rate in TSV of 5/50 microns). Dielectric properties comparable to SiO2. Interposer / Via-middle / Via-Last compatible.
Method: gain guidance
NMOS circuits 3μm
Substrate Size: 3 "or 4"
Fully wet metallization method for achieving shape factor TSVs up to 1:20.
Insulation: P4VP electrografted in aqueous solution
Barrier + Cu sprouting layer: NiB chemical grafting
Copper filling: Electrografting of copper in basic solution
Comments: the use of organic insulation significantly reduces stress around TSVs
Method: focused ion beam
Substrate size: max. 4 ", compatible with small samples
Equipment: Focused ion beam - FIB Zeiss CrossBeam
Method: implantation and annealing, IR-RTA laser (direct), excimer laser and annealing
Substrate size: max. 4 in.
Equipment: Varian and annealing furnaces, Nd: YAG laser, 193 and 248 nm excimer lasers
Comments: possibility of using ions such as As, P, H, Xe, and others. Sample holder heated up to 200 ° C.
Method: Dicer Saw
Substrate size: max. 4 in.
Equipment: Micro Automation
Method: profilometry
Substrate size: max. 6 in.
Equipment: Profilometer Veeco Dektak 150
Method: mechanical polishing
Substrate size: max. 4 in.
Equipment: Ultratech
Comments: polishing facets and chemical mechanical polishing (CMP)
Method: thermal
Substrate size: max. 3 inches (150 mm)
Equipment: Tylan Furnace
Comments: T up to 1200 ° C. TCA cleaning could be implemented.