PECVD - Plasma Enhanced Chemical Vapor Deposition

Equipment role

Deposition of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide and amorphous silicon. Possibility of phosphorus, boron or german doping.

Manufacturer

STS

Model

MESC Multiplex

Technical specification

  • Deposition temperature: from 20°C to 380°C
  • Frequencies: 13.56 MHz or 380 kHz; Possibility of using a mixed frequency mode
  • Maximum power: 1 kW @ 380 kHz, 300 W @ 13.56 MHz
  • Gases installed on the system: NH₃, Ar, N₂, B₂H₆ (diluted to 10% in H₂), GeH₄, CH₄, O₂, PH₃ (diluted to 10% in Ar), N₂O, SiH₄,
  • Sample size: substrates up to 200 mm in diameter
  • Compatible with small samples

Examples of available processes

  • Deposition of insulating layers for the production of transistor grids
  • Deposition for the manufacture of implantation or engraving masks
  • Deposition of doped SiO₂ for the manufacture of waveguides