ALD - Atomic Layer Deposition

Equipment role

Deposition of very thin dielectric layers, passivation




R-200 Advanced

Technical specification

  • Small samples with 200mm substrates
  • Deposition temperature from 21°C to 500°C
  • 3 liquid sources at ambient temperature, 2 heated liquid sources (max 250°C), 1 reactive gas (NH₃), O+ source by indirect O₂ plasma, H+ source by N₂ plasma: indirect H₂

Examples of available processes

  • Deposition of 5nm of SiO₂ at 300°C from SAM.24 and O₂
  • Deposition of 5nm Al₂O₃ at 250°C from TMA1 and H₂O